Table Of ContentElectromigration in Metals
Learn to assess electromigration reliability and design more resilient chips in this
comprehensive and practical resource. Beginning with fundamental physics and
building to advanced methodologies, this book enables the reader to develop highly
reliableon-chipwiringstacksandpowergrids.Throughadetailedreviewontherole
ofmicrostructure,interfaces,andprocessinginelectromigrationreliability,aswellas
characterization, testing, and analysis, the book follows the development of on-chip
interconnects from microscale to nanoscale. Practical modeling methodologies for
statisticalanalysis,fromsimple1Dapproximationtocomplex3Ddescription,canbe
used for step-by-step development of reliable on-chip wiring stacks and industrial-
grade power/ground grids. This is an ideal resource for materials scientists and
reliability and chip design engineers.
PaulS.HoisProfessorEmeritusintheDepartmentofMechanicalEngineeringandthe
Texas Materials Institute at the University of Texas at Austin. He has received
research awards from the Electrochemical Society, IEEE, IITC and Semiconductor
IndustryAssociation,among others.
Chao-Kun Hu has recently retired as a research staff member in the reliability depart-
ment at the Thomas J. Watson Research Center of IBM. He has received IBM
Corporate awards, the IEEE Cledo Brunetti Award, the EDS Recognition and IITC
BestPaperawards,andInventionoftheYearfromtheNewYorkIntellectualProperty
Law Association.
MartinGallisthedirectoroftheUSOperationsReliabilityEngineeringDepartmentat
GlobalFoundriesInc.HeisanIEEETransactionsonDeviceandMaterialsReliability
(TDMR) editor and the recipient of IEEE IITC Best Paper and SRC Mentor of the
Year awards.
Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA,
Siemens Digital Industries Software. He is a recipient of the 2014, 2018, and
2021 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best
Paper awards from ICCAD in2016, 2019, and 2020.
Published online by Cambridge University Press
Published online by Cambridge University Press
Electromigration in Metals
Fundamentals to Nano-Interconnects
PAUL S. HO
UniversityofTexasatAustin
CHAO-KUN HU
IBMThomasJ.WatsonResearchCenter
MARTIN GALL
GlobalFoundriesInc.
VALERIY SUKHAREV
SiemensEDA,SiemensDigitalIndustriesSoftware
Published online by Cambridge University Press
UniversityPrintingHouse,CambridgeCB28BS,UnitedKingdom
OneLibertyPlaza,20thFloor,NewYork,NY10006,USA
477WilliamstownRoad,PortMelbourne,VIC3207,Australia
314–321,3rdFloor,Plot3,SplendorForum,JasolaDistrictCentre,NewDelhi–110025,India
103PenangRoad,#05–06/07,VisioncrestCommercial,Singapore238467
CambridgeUniversityPressispartoftheUniversityofCambridge.
ItfurtherstheUniversity’smissionbydisseminatingknowledgeinthepursuitof
education,learning,andresearchatthehighestinternationallevelsofexcellence.
www.cambridge.org
Informationonthistitle:www.cambridge.org/9781107032385
DOI:10.1017/9781139505819
©PaulS.Ho,Chao-KunHu,MartinGall,andValeriySukharev2022
Thispublicationisincopyright.Subjecttostatutoryexception
andtotheprovisionsofrelevantcollectivelicensingagreements,
noreproductionofanypartmaytakeplacewithoutthewritten
permissionofCambridgeUniversityPress.
Firstpublished2022
PrintedintheUnitedKingdombyTJBooksLimited,PadstowCornwall
AcataloguerecordforthispublicationisavailablefromtheBritishLibrary.
LibraryofCongressCataloging-in-PublicationData
Names:Ho,P.S.,author.|Hu,Chao-Kun,1946–author.|Gall,Martin,author.|Sukharev,Valeriy,
1952–author.
Title:Electromigrationinmetals:fundamentalstonano-interconnects/PaulHo,Chao-KunHu,
MartinGall,ValeriySukharev.
Description:Cambridge;NewYork,NY:CambridgeUniversityPres,2022.|Includesbibliographical
referencesandindex.
Identifiers:LCCN2021050167(print)|LCCN2021050168(ebook)|ISBN9781107032385(hardback)|
ISBN9781139505819(epub)
Subjects:LCSH:Interconnects(Integratedcircuittechnology)–Materials.|Metals–Electricproperties.|
Electrodiffusion.
Classification:LCCTK7874.53.H622022(print)|LCCTK7874.53(ebook)|
DDC621.3815–dc23/eng/20220110
LCrecordavailableathttps://lccn.loc.gov/2021050167
LCebookrecordavailableathttps://lccn.loc.gov/2021050168
ISBN978-1-107-03238-5Hardback
CambridgeUniversityPresshasnoresponsibilityforthepersistenceoraccuracy
ofURLsforexternalorthird-partyinternetwebsitesreferredtointhispublication
anddoesnotguaranteethatanycontentonsuchwebsitesis,orwillremain,
accurateorappropriate.
Published online by Cambridge University Press
Electromigration in Metals
Learn to assess electromigration reliability and design more resilient chips in this
comprehensive and practical resource. Beginning with fundamental physics and
building to advanced methodologies, this book enables the reader to develop highly
reliableon-chipwiringstacksandpowergrids.Throughadetailedreviewontherole
ofmicrostructure,interfaces,andprocessinginelectromigrationreliability,aswellas
characterization, testing, and analysis, the book follows the development of on-chip
interconnects from microscale to nanoscale. Practical modeling methodologies for
statisticalanalysis,fromsimple1Dapproximationtocomplex3Ddescription,canbe
used for step-by-step development of reliable on-chip wiring stacks and industrial-
grade power/ground grids. This is an ideal resource for materials scientists and
reliability and chip design engineers.
PaulS.HoisProfessorEmeritusintheDepartmentofMechanicalEngineeringandthe
Texas Materials Institute at the University of Texas at Austin. He has received
research awards from the Electrochemical Society, IEEE, IITC and Semiconductor
IndustryAssociation,among others.
Chao-Kun Hu has recently retired as a research staff member in the reliability depart-
ment at the Thomas J. Watson Research Center of IBM. He has received IBM
Corporate awards, the IEEE Cledo Brunetti Award, the EDS Recognition and IITC
BestPaperawards,andInventionoftheYearfromtheNewYorkIntellectualProperty
Law Association.
MartinGallisthedirectoroftheUSOperationsReliabilityEngineeringDepartmentat
GlobalFoundriesInc.HeisanIEEETransactionsonDeviceandMaterialsReliability
(TDMR) editor and the recipient of IEEE IITC Best Paper and SRC Mentor of the
Year awards.
Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA,
Siemens Digital Industries Software. He is a recipient of the 2014, 2018, and
2021 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best
Paper awards from ICCAD in2016, 2019, and 2020.
Published online by Cambridge University Press
Published online by Cambridge University Press
Electromigration in Metals
Fundamentals to Nano-Interconnects
PAUL S. HO
UniversityofTexasatAustin
CHAO-KUN HU
IBMThomasJ.WatsonResearchCenter
MARTIN GALL
GlobalFoundriesInc.
VALERIY SUKHAREV
SiemensEDA,SiemensDigitalIndustriesSoftware
Published online by Cambridge University Press
UniversityPrintingHouse,CambridgeCB28BS,UnitedKingdom
OneLibertyPlaza,20thFloor,NewYork,NY10006,USA
477WilliamstownRoad,PortMelbourne,VIC3207,Australia
314–321,3rdFloor,Plot3,SplendorForum,JasolaDistrictCentre,NewDelhi–110025,India
103PenangRoad,#05–06/07,VisioncrestCommercial,Singapore238467
CambridgeUniversityPressispartoftheUniversityofCambridge.
ItfurtherstheUniversity’smissionbydisseminatingknowledgeinthepursuitof
education,learning,andresearchatthehighestinternationallevelsofexcellence.
www.cambridge.org
Informationonthistitle:www.cambridge.org/9781107032385
DOI:10.1017/9781139505819
©PaulS.Ho,Chao-KunHu,MartinGall,andValeriySukharev2022
Thispublicationisincopyright.Subjecttostatutoryexception
andtotheprovisionsofrelevantcollectivelicensingagreements,
noreproductionofanypartmaytakeplacewithoutthewritten
permissionofCambridgeUniversityPress.
Firstpublished2022
PrintedintheUnitedKingdombyTJBooksLimited,PadstowCornwall
AcataloguerecordforthispublicationisavailablefromtheBritishLibrary.
LibraryofCongressCataloging-in-PublicationData
Names:Ho,P.S.,author.|Hu,Chao-Kun,1946–author.|Gall,Martin,author.|Sukharev,Valeriy,
1952–author.
Title:Electromigrationinmetals:fundamentalstonano-interconnects/PaulHo,Chao-KunHu,
MartinGall,ValeriySukharev.
Description:Cambridge;NewYork,NY:CambridgeUniversityPres,2022.|Includesbibliographical
referencesandindex.
Identifiers:LCCN2021050167(print)|LCCN2021050168(ebook)|ISBN9781107032385(hardback)|
ISBN9781139505819(epub)
Subjects:LCSH:Interconnects(Integratedcircuittechnology)–Materials.|Metals–Electricproperties.|
Electrodiffusion.
Classification:LCCTK7874.53.H622022(print)|LCCTK7874.53(ebook)|
DDC621.3815–dc23/eng/20220110
LCrecordavailableathttps://lccn.loc.gov/2021050167
LCebookrecordavailableathttps://lccn.loc.gov/2021050168
ISBN978-1-107-03238-5Hardback
CambridgeUniversityPresshasnoresponsibilityforthepersistenceoraccuracy
ofURLsforexternalorthird-partyinternetwebsitesreferredtointhispublication
anddoesnotguaranteethatanycontentonsuchwebsitesis,orwillremain,
accurateorappropriate.
Published online by Cambridge University Press
Electromigration in Metals
Learn to assess electromigration reliability and design more resilient chips in this
comprehensive and practical resource. Beginning with fundamental physics and
building to advanced methodologies, this book enables the reader to develop highly
reliableon-chipwiringstacksandpowergrids.Throughadetailedreviewontherole
ofmicrostructure,interfaces,andprocessinginelectromigrationreliability,aswellas
characterization, testing, and analysis, the book follows the development of on-chip
interconnects from microscale to nanoscale. Practical modeling methodologies for
statisticalanalysis,fromsimple1Dapproximationtocomplex3Ddescription,canbe
used for step-by-step development of reliable on-chip wiring stacks and industrial-
grade power/ground grids. This is an ideal resource for materials scientists and
reliability and chip design engineers.
PaulS.HoisProfessorEmeritusintheDepartmentofMechanicalEngineeringandthe
Texas Materials Institute at the University of Texas at Austin. He has received
research awards from the Electrochemical Society, IEEE, IITC and Semiconductor
IndustryAssociation,among others.
Chao-Kun Hu has recently retired as a research staff member in the reliability depart-
ment at the Thomas J. Watson Research Center of IBM. He has received IBM
Corporate awards, the IEEE Cledo Brunetti Award, the EDS Recognition and IITC
BestPaperawards,andInventionoftheYearfromtheNewYorkIntellectualProperty
Law Association.
MartinGallisthedirectoroftheUSOperationsReliabilityEngineeringDepartmentat
GlobalFoundriesInc.HeisanIEEETransactionsonDeviceandMaterialsReliability
(TDMR) editor and the recipient of IEEE IITC Best Paper and SRC Mentor of the
Year awards.
Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA,
Siemens Digital Industries Software. He is a recipient of the 2014, 2018, and
2021 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best
Paper awards from ICCAD in2016, 2019, and 2020.
Published online by Cambridge University Press
Published online by Cambridge University Press
