Download EE-612: Mosfet Iv: Part 1: Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2008 PDF Free - Full Version
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About EE-612: Mosfet Iv: Part 1: Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2008
This document summarizes a lecture on MOSFET I-V characteristics. It begins with an introduction to the square law theory used to derive the linear and saturation regions of the MOSFET I-V curve. It then discusses how PN junction effects and the bulk charge influence the threshold voltage and I-V relationship. Finally, it outlines different approaches to modeling the MOSFET I-V curve and notes that modern short-channel devices require considering velocity saturation.
Detailed Information
| Author: | ['Nava Krishnan'] |
|---|---|
| Publication Year: | 2013 |
| Pages: | 33 |
| Language: | English |
| Format: | |
| Price: | FREE |
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