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About EE 466/586 VLSI Design: School of EECS Washington State University Pande@eecs - Wsu.edu
The document discusses the MOS transistor. It describes the structural details of an NMOS transistor including the channel length, channel width, and gate oxide thickness. It explains the operational mechanism of an NMOS transistor where applying a positive voltage to the gate draws electrons into the channel region, creating a conducting path between the drain and source. The threshold voltage is defined as the minimum gate voltage needed to initiate this conducting channel. Current-voltage relationships are examined for both long-channel and short-channel transistors. Velocity saturation effects in deep submicron transistors are also covered.
Detailed Information
| Author: | ['Phạm Đức Thuận'] |
|---|---|
| Publication Year: | 2022 |
| Pages: | 32 |
| Language: | English |
| Format: | |
| Price: | FREE |
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