Dynamic Characterisation of Analogue-to-Digital Converters

192 Pages·2005·3.66 MB·English

by  Dominique Dallet

BROADBAND OPTO-ELECTRICAL RECEIVERS
INSTANDARD CMOS
ANALOG CIRCUITS AND SIGNAL PROCESSING SERIES

Consulting Editor: Mohammed Ismail. Ohio State University

Titles in Series:
BROADBAND OPTO-ELECTRICAL RECEIVERS IN STANDARD CMOS
Hermans, Carolien, Steyaert, Michiel
ISBN 978-1-4020-6221-6
ANALOG CIRCUIT DESIGN TECHNIQUES AT 0.5V
Chatterjee, S., Kinget, P., Tsividis, Y., Pun, K.P.
ISBN-10: 0-387-69953-8
IQ CALIBRATION TECHNIQUES FOR CMOS RADIO TRANCEIVERS
Chen, Sao-Jie, Hsieh, Yong-Hsiang
ISBN-10: 1-4020-5082-8
LOW-FREQUENCY NOISE IN ADVANCED MOS DEVICES
Haartman, Martin v., Östling, Mikael
ISBN-10: 1-4020-5909-4
THE GM/ID DESIGN METHODOLOGY FOR CMOS ANALOG LOW POWER INTEGRATED CIRCUITS
Jespers, Paul G.A.
ISBN-10: 0-387-47100-6
PRECISION TEMPERATURE SENSORS IN CMOS TECHNOLOGY
Pertijs, Michiel A.P., Huijsing, Johan H.
ISBN-10: 1-4020-5257-X
CMOS CURRENT-MODE CIRCUITS FOR DATA COMMUNICATIONS
Yuan, Fei
ISBN: 0-387-29758-8
RF POWER AMPLIFIERS FOR MOBILE COMMUNICATIONS
Reynaert, Patrick, Steyaert, Michiel
ISBN: 1-4020-5116-6
IQ CALIBRATION TECHNIQUES FOR CMOS RADIO TRANCEIVERS
Chen, Sao-Jie, Hsieh, Yong-Hsiang
ISBN: 1-4020-5082-8
ADVANCED DESIGN TECHNIQUES FOR RF POWER AMPLIFIERS
Rudiakova, A.N., Krizhanovski, V.
ISBN 1-4020-4638-3
CMOS CASCADE SIGMA-DELTA MODULATORS FOR SENSORS AND TELECOM
del Río, R., Medeiro, F., Pérez-Verdú, B., de la Rosa, J.M., Rodríguez-Vázquez, A.
ISBN 1-4020-4775-4
SIGMA DELTA A/D CONVERSION FOR SIGNAL CONDITIONING
Philips, K., van Roermund, A.H.M.
Vol. 874, ISBN 1-4020-4679-0
CALIBRATION TECHNIQUES IN NYQUIST A/D CONVERTERS
van der Ploeg, H., Nauta, B.
Vol. 873, ISBN 1-4020-4634-0
ADAPTIVE TECHNIQUES FOR MIXED SIGNAL SYSTEM ON CHIP
Fayed, A., Ismail, M.
Vol. 872, ISBN 0-387-32154-3
WIDE-BANDWIDTH HIGH-DYNAMIC RANGE D/A CONVERTERS
Doris, Konstantinos, van Roermund, Arthur, Leenaerts, Domine
Vol. 871 ISBN: 0-387-30415-0
METHODOLOGY FOR THE DIGITAL CALIBRATION OF ANALOG CIRCUITS AND SYSTEMS: WITH
CASE STUDIES
Pastre, Marc, Kayal, Maher
Vol. 870, ISBN: 1-4020-4252-3
HIGH-SPEED PHOTODIODES IN STANDARD CMOS TECHNOLOGY
Radovanovic, Sasa, Annema, Anne-Johan, Nauta, Bram
Vol. 869, ISBN: 0-387-28591-1
LOW-POWER LOW-VOLTAGE SIGMA-DELTA MODULATORS IN NANOMETER CMOS
Yao, Libin, Steyaert, Michiel, Sansen, Willy
Vol. 868, ISBN: 1-4020-4139-X
DESIGN OF VERY HIGH-FREQUENCY MULTIRATE SWITCHED-CAPACITOR CIRCUITS
U, Seng Pan, Martins, Rui Paulo, Epifânio da Franca, José
Vol. 867, ISBN: 0-387-26121-4
DYNAMIC CHARACTERISATION OF ANALOGUE-TO-DIGITAL CONVERTERS
Dallet, Dominique; Machado da Silva, José (Eds.)
Vol. 860, ISBN: 0-387-25902-3
Broadband Opto-Electrical Receivers
in Standard CMOS
By
CAROLIEN HERMANS
KULeuven,Belgium
and
MICHIELSTEYAERT
KULeuven,Belgium
AC.I.P.CataloguerecordforthisbookisavailablefromtheLibraryofCongress.
ISBN978-1-4020-6221-6(HB)
ISBN978-1-4020-6222-3(e-book)
PublishedbySpringer,
P.O.Box17,3300AADordrecht,TheNetherlands.
www.springer.com
Printedonacid-freepaper
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(cid:2)c 2007Springer
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inanyformorbyanymeans,electronic,mechanical,photocopying,microfilming,
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Preface
The gradual recovery of the optical industry since 2004 has enabled new de-
velopmentsinthecommunication,consumerandentertainmentmarkets.Lots
ofnewapplicationsareemergingwherehighvolumesandlowcostaspectsare
crucial.Tomeetthesedemands,siliconmicrophotonicsaimsforthemanufac-
turing of opto-electrical components in the same platform that has enabled
Moore’s Law: single-crystalsilicon.
The presented work fits in this quest for integrated opto-electrical solu-
tions, and focuses on the receiver front-end. To further reduce the cost, the
cheapesttechnologyisselected:standardCMOS,withoutanyopticaltricksor
flavors.DespitetheinherentloweropticalperformanceofamainstreamCMOS
process,itisshownintheoryandpracticethatlightdetectionisfeasiblewith
CMOS diodes. Furthermore, speed enhancement techniques are presented to
extend the speed performance above 1Gbit/s.
The three receiver blocks examined in this work are the photodiode
(PD), the transimpedance amplifier (TIA) and the limiting amplifier (LA).
First, to thoroughly understand the light detection mechanisms in silicon,
the basic semiconductor one-dimensional equations are studied. Next, a two-
dimensionalmodelisdevelopedtocomparetheperformanceofdifferenttypes
ofphotodiodesimplementedinsuccessivetechnologygenerationsandforthree
inputwavelengths.Analyticaldesignequationsarederivedtoguidethedesign
ofthe amplifying circuits. For the TIA, the focus lies on the sensitivity-speed
trade-off. For the LA, a high gain-bandwidth is pursued.
Theory is put into practice through several CMOS implementations. A
first 0.18µm chip compares different photodiode topologies. The differential
diode with TIA has the best high-speed performance and achieves a BER of
3·10−10 when a 500Mbit/s optical signal of −8dBm is applied. Next, dif-
ferent photodiode topologies manufactured in a 90nm CMOS technology are
compared.Thebestresultsareobtainedwiththep+ n-welldiodewithguard.
This diode with TIA can handle data with bitrates up to 500Mbit/s and an
optical power of −8dBm, showing a BER of 10−9. A third chip contains
a LA implemented in 0.18µm CMOS and based on a cascade of Cherry-
v
vi Preface
Hooper stages. Eye diagrams at 3.5Gbit/s illustrate the applied broadband
techniques.
Finally, all knowledge is gathered in the design of a monolithic optical
receiverfront-end in 0.18µm CMOS. This chip contains a differential CMOS
photodiode, a differential two-stage TIA with cross-coupled feed-back and a
high-gain broadband LA. The speed performance of the photodiode is fur-
ther enhanced by an analog equalizer. The TIA achieves a transimpedance-
bandwidth product of 19THzΩ. The LA features a gain-bandwidth product
of397GHz.At6Gbit/s,theLAwithoutputbufferhasaBERof10−12 when
8mVpp is applied at the input. The complete receiver is characterized by a
BER smaller than 10−12 for a −6dBm optical input signal with a bitrate of
1.7Gbit/s.This receivercompetes with presentstate-of-the-artandis,to the
author’sknowledge,thefirstCMOSGbit/sopto-electricalreceiverintegrating
PD, TIA and LA on the same die.
Heverlee, Carolien Hermans
March 2007 Michiel Steyaert
List of Abbreviations and Symbols
Abbreviations
ac Alternating Current
AGC Automatic Gain Control
BER Bit Error Rate
BiCMOS Bipolar Complementary Metal Oxide Semiconductor
CD Compact Disc
CDR Clock and Data Recovery
CG Common Gate
CMOS Complementary Metal Oxide Semiconductor
CMU Clock Multiplication Unit
CSD Capacitive Source Degeneration
DC Direct Current
DG Diffraction Grating
DMUX Demultiplexer
DSL Digital Subscriber Loop
DVI Digital Video Interface
DVD Digital Versatile Disc
DWDM Dense Wavelength-Division Multiplexing
ECL Emitter Coupled Logic
FTTH Fiber-To-The-Home
GaAs Gallium Arsenide
GaN Gallium Nitride
GB Gigabyte
Ge Germanium
HD-DVD High Density Digital Versatile Disc
IC Integrated Circuit
In0.53Ga0.47As Indium Gallium Arsenide
InP Indium Phosphide
ISI Intersymbol Interference
ISSCC International Solid-State Circuits Conference
vii
viii List of Abbreviationsand Symbols
LA Limiting Amplifier
LAN Local Area Network
LD Laser Diode
LED Light Emitting Diode
MAN Metro(politan) Area Network
MOS Metal Oxide Semiconductor
MOST Media Oriented System Transport
MUX Multiplexer
nMOS n-channel MOS transistor
NA Numerical Aperture
NIC Negative Impedance Converter
NRZ Non-Return-to-Zero
pMOS p-channel MOS transistor
prbs Pseudorandom Bit Sequence
PA Post-Amplifier
ParBERT Parallel Bit Error Ratio Tester
PBS PolarizationBeam Splitter
PCS Polymer-CladSilica
P.M. Phase Margin
PMMA Polymethyl Methacrylate
P.O. Percent Overshoot
POF Plastic Optical Fiber
PON Passive Optical Networks
OEIC Opto-electronic Integrated Circuit
POF Plastic Optical Fiber
QWP Quarter-Wave Plate
RGC Regulated Cascode
RZ Return-to-Zero
SAN Storage Area Network
SDH Synchronous Digital Hierarchy
Si Silicon
SiO2 Silicon dioxide
SML-detector Spatially Modulated Light detector
SNR Signal to Noise Ratio
SOI Silicon on Insulator
SONET Synchronous Optical Network
TAS Transadmittance Stage
TIA Transimpedance Amplifier
TIS Transimpedance Stage
UI Unite Interval
VA Voltage Amplifier
VCSEL Vertical-Cavity Surface-Emitting laser
VUC Voltage-Up-Converter
WAN Wide Area Networks
WDM Wavelength-Division Multiplexing
List of Abbreviations and Symbols ix
Symbols
A voltage gain
A0 DC voltage gain
A1st differential gain of a single stage of a post-amplifier
A differential gain of a Cherry-Hooper stage
CH
A differential gain of a voltage amplifier with
CSD
capacitive source degeneration
A differential gain
diff
A gain of an offset compensation amplifier
os
A gain of a post-amplifier
PA
APA,0 mid-band gain of a post-amplifier
BW noise bandwidth
n
BW 3-dB bandwidth of a post-amplifier
PA
BW 3-dB bandwidth of a TIA
TIA
BW 3-dB bandwidth of a voltage amplifier
VA
c speed of light in vacuum
C diode junction capacitance
dio
C drain-source capacitance
ds
C gate-source capacitance
gs
C input capacitance
in
C total input capacitance
inT
C input capacitance of the next stage
next
C output capacitance
out
C total output capacitance
outT
C oxide capacitance
ox
di2 diode shot noise
dio
di2 thermal channel noise of transistor M
Mα α
di2 power spectral density of the TIA input-referred
n,TIA
noise current
di2 thermal current noise of transistor R
Rα α
dv2 power spectral density of the TIA output noise voltage
n,TIA
D electron diffusion constant
n
D hole diffusion constant
p
E bandgap energy
g
E photon energy
p
f0dB,GH unity-gain frequency of the loop gain
f3dB 3-dB bandwidth
f3dB,1st 3-dB bandwidth of a single stage of a post-amplifier
f3dB,PA 3-dB bandwidth of a post-amplifier
f dominant pole of the loop gain
d,GH
f low-frequency cut-off
LF
x List of Abbreviationsand Symbols
f non-dominant pole of the loop gain
nd,GH
f non-dominant pole of TIA
nd,TIA
f unity current gain frequency
T
F factor defined by the ratio of BW and BW
BW VA TIA
g transistor output conductance
ds
g transistor transconductance
m
G light generation term
G transfer function of the equalizer
eq
G effective transconductance of an amplifier stage with
m,CSD
capacitive source degeneration
G TIA open-loop gain
TIA
GBW gain-bandwidth product
GH TIA loop gain
TIA
h Planck’s constant
i small-signal input current
in
i equivalent input-referred rms noise
n,rms
i total integrated input-referred optical receiver
n,OR
current noise
i total integrated input-referred TIA current noise
n,TIA
isens electrical receiver sensitivity
pp
I diode current
dio
I drain-source current
ds
J drift current density
drift
J electron diffusion current density
diffn
J hole diffusion current density
diffp
K(cid:2) transconductance parameter for an nMOS transistor
n
K(cid:2) transconductance parameter for a pMOS transistor
p
L transistor length
L loop gain of the feedback loop in the modified
MCH
Cherry-Hooper stage
Lb depth in the substrate where n=n0
L depth of the n-well, upper edge of space charge region
nw
L lower edge of the space charge region
scr
L depth of the source/drainregion, upper edge of the space
sd
charge region
M Miller factor
i
n electron concentration
n(t) noise voltage
n0 initial electron concentration
N acceptor concentration in p-substrate
A
N donor concentration in n-well
D
N number of fingers in a photodiode topology
f
N number of squares in a photodiode topology
s
p hole concentration
p0 initial hole concentration