DTIC ADA335326: International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997.

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OLI ' NoP
61997
INTERNATIONAL CONFERENCEO
L.P*R*M
INDIUM
PHOSPHIDE
AND
RELATEDN
MATE HJAL S
11 1997
- 115 M~
TARAHyp~is HOTEL AND IRESORT
HYANNIs, CAPE~ COD, MASSACHUSETTS USA
IUR1hUIO-N
ATEM A
Approvvd for Pab~iox a1*00"
Pluailbutioa UuJimltod
Lasenrs d Electru-OplIcs Society
14 January 1998
S Defense Technical Information Center
%
8725 John J. Kingman Road
STE 0944
("
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RE: Grant No: N00014-97-1-0876
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Proceedings for the 1997 International Conference on Indium Phosphide and Related Materials.
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Conference Proceedings for the 1997 International Conference on Indium Phosphide and G
Related Materials N00014-97-1-0876
IPRM'97
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1997 INTERNATIONAL CONFERENCE ON
INDIUM
PHOSPHIDE
AND
RE LATED
MATERIALS
£,, 1(cid:127)91
11-15 1997
MAY
TARA HYANNS HOTEL AND RESORT
HYANNIS, CAPE COD, MASSACHUSETTS, USA
Sponsored by the
IEEE Lasers and Electro-Optics Society
and the IEEE Electron Devices Society
.CA.
IEEE Catalog # 97CH36058 ISSN # 1092-8669
01
MC QUAIJIY W.0==
The papers in this book comprise the digest of the meeting mentioned on the cover and title page. They
reflect the author's opinions and are published as presented and without change in the interest of timely dis-
semination. Their inclusion in this publication does not necessarily constitute endorsement by the editors,
the Institute of Electrical and Electronics Engineers, Inc.
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IEEE Catalog Number: 97CH36058
ISBN: 0-7803-3898-7 Softbound Edition
0-7803-3899-5 Casebound Edition
0-7803-3900-2 Microfiche Edition
ISSN: 1092-8669
ii , i
The conference committee would like to thank the following
sponsors for their sponsorship of IPRM '97:
Epichem
AIXTRON
Epitaxial Products, Inc.
JiJ
Conference Chair Program Chair Short Course Chair Local Arrangements Chair
Stephen Forrest Peter Asbeck Dan Botez Leslie Kolodziejski
Princeton University, University of Caltfornia, University of Wisconsin, M17, Cambridge, MA
Princeton, NJ San Diego, CA Madison, WY Tel: [phone]
Tel: [phone] Tel: [phone] Tel: [phone]
Exhibition Chair Publicity Chair Golf Chair
Marie Meyer Joe Lorenzo Gareth Llewellyn
Compound Semiconductor Rome Laboratory Epitaxial Products,I nc.
Magazine Bedford, MA Londonderry, NH
St. Paul,M N Tel: [phone] Tel: [phone]
Tel: [phone]
STEER-1 ING C1O MMlIT
Steering Co-Chairs
Hideki Hasagawa Olaf Hildebrand
Hokkaido University, Japan Alcatel Sel, Germany
Members
Steve Bland, EPI K. Heime, RWTHAachen Drew Nelson, EPI
Brad Boos, NRL Olaf Hildebrand, Alcatel SEL Andre Scavennec, CNET
John Bowers, UCSB Kenichi Iga, T7T Rajendra Singh, Clemson University
Steve Forrest, Princeton University Joe Lorenzo, Rome Laboratory Osamu Wada, FESTA
Hideki Hasegawa, Hokkaido University Rodney Moss, British Telecom
Research Labs
Electron Devices Optoelectronics Epitaxy Processing New Materials Bulk & Semi- Characterization
Chair: Chair: Chair: Chair: and Quantum Insulating & Control
Joseph Jenson P. Daniel Dapkus Charles Tu Ilesanmi Adesida Structures Materials Chair:
Hughes Research University of University of University of Illinois Chair: Chair: George Maracas
Labs, Malibu, CA Southern California California Urbana, IL Gregory H. Olsen David Bliss Motorola, Inc.
Los Angeles, CA San Diego, CA Sensors Unlimited Rome Laboratories Tempe, AZ
M. Berg K. Asakawa Princeton, NJ Hanscom AFB, MA
Daimler-Benz J. Coleman R. Bhat FESTA D. Aspnes
Uln, Germany University of Illinois Bellcore Tsukuba,J apan D. Botez R. Fornari NC State University
Urbana, IL Red Bank, NJ University of WI MASPEC-CNR Inst Raleigh, NC
Y. Ishii J. Cowles Madison, WI Parma, Italy
N7TLSI Laboratories T. Koch K.Y. Cheng TRW P. Petroff
Kanagau'a,J apan Lucent Technologies, University of Illinois Redondo Beach, CA J. Connolly G. Iseler University of
Bell Labs Innovations Urbana-Champaign, David Sarnoff MIT/Lincoln Lab California
P. Launay Mu rray Hill, NJ AL J. Dickmann Research Center Hanscom AFB, MA Santa Barbara, CA
CNET Daimler-Benz Princeton, NJ
Bagneux, France K. Iga L. Goldstein Uhn, Germany G. Mueller L. Kolodziejski
Tokyo Institute of Alcatel Alsthom M. DiGuiseppe Universit(cid:127)t MIT
E. Martinez Technology Recherche Y.I. Nissim Lucent Technologies Erlangen-Nurnberg Cambridge, MA
Wright Labs Yokohama, Japan Marcoussis,F rance Centre National MurrayH ill, NJ Nurnberg,G ermany
Dayton, OH dEtudes des W. Richter
H. Melchior H. Heinecke Telecommunications R. Dupuis 0. Oda Technische
S. Takamiya IQE University of Uhn Bagneux, France University of Texas Japan Ene~gy Comp. Universitdtt Berlin
Mitsubishi Electric Zurich, Switzerland UinmG, ermany Austin, 7X Saitama,J apan Berlin, Germany
CoTp. Sj. Pearton
Hyogo, Japan W.T. Tsang A. Li University of Florida B. Leheny M. Tatsumi
Lucent Technologies, Shanghai Institute of Gainesville, FL DARPA Sumitomo Electric
M. Rodwell Bell Labs Innovations Metallurgy Arlington, VA Osaka, Japan
University of Murray Hill, NJ Shanghai, China H. Takeuchi
California, NTT Optoelectronics J. Woodall M. Young
Santa BarbaraC, A H. Sugiura Labs Purdue University Amer Ctystal
NTT Optoelectronics Atsugi, Japan West Lafayette, IN Technology
Labs Fremont, CA
Aisugi, Japan
iv
MONDAY, 12 MAY 1997
Plenary Session
PLEN1 InP-Based Components for Telecom Systems in Europe .................................... 3
PLEN2 Advances in InP-Based Optoelectronic Devices and Circuits for Optical Communication,
Interconnection and Signal Processing ................................................ 7
PLEN3 Unipolar Mid-Infrared Semiconductor Lasers ........................................... 11
MA: Power Devices
MA1 Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistor .................. 15
MA2 0.9W/mm, 76% PAE (7GHz) GaInAs/InP Composite Channel HEMTS ........................... 20
MA3 High Power InAlAs/InGaAs/InP-HFET Grown by MOVPE ................................... 24
MA4 InP/InGaAs Double HBTs with High CW Power Density at 10 GHz ............................ 28
MB: Vertical Cavity Lasers and Optoelectronic Devices
MB1 InAlGaP Vertical Cavity Surface Emitting Lasers (VCSELs): Processing and Performance .............. 32
MB2 Temperature Performance of 1.55prm Vertical Cavity Lasers with Integrated InP/GaInAsP Bragg
Reflector ....................................................................... 36
MB3 Photo-Pumped Operation of InGaAsP Vertical-Cavity Lasers on Si Fabricated by Wafer Bonding ........ 40
MB4 Low-Threshold Aluminum Free 808 nm Lasers Grown by Solid Source Molecular Beam Epitaxy ........ 44
Poster Session
Epitaxy
MP1 Silicon Doping of InP Grown by MOVPE Using Tertiarybutylphosphine ......................... 47
MP2 Suppression of Interdiffusion of Fe and Zn in InP:Fe/InP:Zn Structures .......................... 51
MP3 Fe Distribution Around Hydride VPE InP:Fe Regrown Laser Stripes ............................ 55
MP4 Ultrahigh-Speed InGaP/AIGaAs/InGaAs HBTs Using Mg as the Base Dopant ...................... 58
MP5 Overgrowth of the InGaAsP Materials on Rectangular-Patterned Gratings Using GSMBE .............. 62
MP6 MBE Regrowth of InP on Patterned Surfaces and its Application Potential for Optoelectronic Devices .... 66
MP7 Electrical Characterization of High Resistivity InP and Optically Fast (Sub-Picosecond) InGaAsP Grown
by He Plasma Assisted Epitaxy ...................................................... 70
MP8 Highly Resistive FET Buffer Layers on InP Grown by LP-MOVPE New Materials and Quantum Structures .74
MP9 AlInAs/InGaAs Long-Period-Superlattice Resonant-Tunneling Transistor (LPSRTr) Prepared by MOCVD . .77
M P10 InP Nanocrystals via Aerosol Route ................................................... 79
MPI1 Quantization Effects InGaAs/InP-Quantum Wires Grown on Patterned Substrates .................. 83
MP12 Observation of Spinodal Phase Separation and Quantum Dot Formation in InGaAs/GaAs Layers Grown
at Down-Ramped Growth Temperatures ............................................... 87
MP13 Molecular Beam Epitaxial Growth of Quantum Wire Heterostructures Using (GAP)x/(InAs)y Short Period
Superlattices on InP ............................................................... 90
MP14 Direct Calculation of Tunneling Conductivity Profiles of Novel InP/InGaAs Superlattice Structures by
M eans of the Green's Function ...................................................... 92
v MC qUAITY LN&-WMED 1(
MP15 Cubic Phase Gallium Nitride Epitaxially Formed on GaAs or GaInAs at Low Temperature
w ith a NH- D ECR Plasma .......................................................... 96
3
MP16 Improvement of Self-Organized Quantum Wire Structures Formed in (GaP),(InP),m
Superlattices by the Growth on GaAs (01 1) Substrate ..................................... 99
Optoelectronics
MP17 A Surface-Normal Reflective Optical Modulator at a Wavelength of 1.3 pm Using the
Wannier-Stark Effect of the InP/InGaAsP Superlattice ...................................... 103
MP18 Tunable Narrowband Optical Filter in Photorefractive InGaAsP:Fe/InP:Fe Singlemode Waveguide ...... 107
MP19 Leakage Current Detection In InGaAsP Laser Diodes by Imaging of the Optical Emission within the
Confining InP Layers ............................................................ 111
MP20 Tunable Monolithic Fabry-Perot Filter Manufactured by Selective Etching of InGaAs/InP Epitaxial Films.. 115
Characterization and Control
MP21 Oxygen Control in Al-Based III-V Epiwafers by SIMS for Yield Improvement ..................... 118
MP22 Heavy-Hole Effective Mass and Valence-Band Offset Estimated by Confined States in
In0.53Ga0.47As/In0.52A10.As Multi-Quantum Well Structures ................................... 119
MP23 Optical Determination of InxGalxAs Composition of InP Using a Fabry-Perot Test Structure .......... 123
MP24 A Study of Buffer Layers in a Double Channel InP-HFET Structure ............................ 125
MP25 Photoreflectance Mapping of InAlAs/InGaAs HEMTs Wafer ................................. 129
Processing
MP26 Manufacturable InP-Based HBT Technology for Low Voltage Millimeter-Wave and Microwave
Com mu nications ............................................................... 133
MP27 Selective Gate Recess RIE Etching by CHF3+BC13 in InAlAs/InGaAs HEMTs ...................... 137
MP28 The Effect of High Temperature Annealing on 1.55pm Strained GaInAs/AlGaInAs MQW Lasers Grown
by M BE . . . .. . . . . . . . . . .. . . . . . . . . . . .. . . . . . . .. . . . . . . . .. . . . . . . . . . . .. . . . . . . . . . . . . . 14 1
MP29 Fabrication and Characterization of Regrown InP/GaInAs Quantum Point Contact ................. 145
Electron Devices
MP30 Measurement of High Current Density Phenomena and Velocity Overshoot in InP/GaInAs HBTs ...... 149
MP31 The Effect of Passivation on the Hot Electron Degradation of Lattice-Matched InAlAs/InGaAs/InP HEMTs 153
MP32 Ring Oscillator Using InAIAs/InGaAs/InP Enhancement/Depletion-Mode High Electron Mobility
Transistor Direct-Coupled FET Logic Inverters ........................................... 157
MP33 Detrimental Effects Limiting the Performances of InP HEMT-Based OEICs ....................... 161
MP34 InP Based FET Structure Grown and Processed at Extremely Low Temperatures of 280'C ........... 165
MP35 Dynamic Behaviour of the Metal Heterojunction Bipolar Transistor ............................ 169
MP36 A Slow-Trap Model for the Kink Effect on InAlAs/InP HFET ................................ 173
MP37 Passive, Coplanar V-Band HEMT Mixer ............................................... 177
vi
MC: HEMTs
MCI InAlAs/InGaAs/InP Dual-Gate HFET's: New Aspects and Properties ........................... 181
MC2 Novel InAlAs/InGaAs Heterojunction FETs with Modulated Indium Composition Channel and
AIAs/InAs Superlattice Barrier Layer .................................................. 185
MC 3 .................................................................... W ITH D RAW N
MC4 First Demonstration of AlInAs/GaInAs HEMTs on AIAsSb and Oxidized A1AsSb Buffers ............. 189
MC5 DC, Small-Signal, and Noise Characteristics of 0.1pm A1Sb/InAs HEMTs ........................ 193
MC6 Temperature Dependence of Breakdown Voltage in InAlAs/InGaAs HEMTs: Theory and Experiments... 197
MC7 Fluorine Limited Reliability of AlInAs/InGaAs High Electron Mobility Transistors with Molybdenum
G ate s . . . . . . . . .. . . . . . . . .. . . . . . . .. . . . . .. . . . . . .. . . . . . . . . .. . . . . . . . . . .. . . . . . . . . . . 20 1
MD: Joint Session: Bulk/NMQS
MD1 Bulk Ternary Indium Phosphide Arsenide, InPx Asx: Growth and Characterization ................. 205
MD2 Residual Strain as a Measure of Wafer Quality in Indium Phosphide Crystals ..................... 209
MD3 Crystal Quality of InGaAs Epitaxial Layer on 3-inch Diameter VCZ/LEC InP(Fe) Substrates ........... 213
MD4 High-Speed InAIAs/InGaAs HBTs on 4-inch S.I. GaAs Substrates ............................. 217
MD5 The Effects of InAlAs Strained-Superlattice Barriers Upon the Properties of InGaAIAs/InP Quantum
We lls and Double Heterostructures .................................................. 220
MD6 Strain Compensated GaInAs/AlInAs Tunneling Barrier MQW Structure for Polarization Independent
Op tical Sw itching ............................................................... 222
MD7 Anisotropic Polarization Properties of GaInAsP/InP Compressively-Strained Quantum-Wire Structure .... 226
TUESDAY, 13 MAY 1997
TuA: InP Integrated Circuits and Applications
TuAl Impact on InP-Based IC's for Future Lightwave Communication Systems ........................ 233
TuA2 InP HBT Continuous Time 2nd Order Bandpass A I Modulator and 1-to-16 DEMUX IC with Center
Frequency Continuously Programmable from 0 to 70 MHz .................................... 237
TuA3 D-Band MMIC LNAs with 12 dB Gain at 155 GHz Fabricated on a High Yield InP HEMT MMIC
Production Process .............................................................. 241
TuA4 80-100 GHz Broadband Amplifier MMIC Utilizing CPWs and Quarter Micron InP-Based HEMTs ....... 245
TuA5 W-Band High-Gain Amplifier Using InP Dual-Gate HEMT Technology ......................... 249
TuB : Characterization & Control I
TuB1 Feedback Control of Substrate Temperature and Film Composition During MBE Growth of
Lattice-Matched In Ga As on InP.................... 253
3 4
TuB2 In-situ Monitoring of Arsenic-Phosphorus Exchange in MOVPE Growth of InGaAs/InP Quantum Wells
by Kinetic Ellipsom etry ........................................................... 257
vii