Deep Levels, GaAs, Alloys, Photochemistry

353 Pages·1983·14.92 MB·English

by  R.K. Willardson and Albert C. Beer (Eds.)

SEMICONDUCTORS
AND SEMIMETALS
VOLUME 19
Deep Levels, GaAs, Alloys, Photochemistry
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SEMICONDUCTORS
AND SEMIMETALS
Edited by R. K. WILLARDSON
WILLARDSON CONSULTING
SPOKANE, WASHINGTON
ALBERT C. BEER
BATTELLE COLUMBUS LABORATORIES
COLUMBUS, onio
VOLUME 19
Deep Levels, GaAs, Alloys, Photochemistry
1983
ACADEMIC PRESS
A Subsidiary of ffarcourt Brace Jovanovich, Publishers
New York London
Paris San Diego San Francisco Sdo Paul0 Sydney Tokyo Toronto
COPYRIGHT @ 1983, BY ACADEMIPCRE SS, INC.
ALL RIGHTS RESERVED.
NO PART OF THIS PUBLICATION MAY BE REPRODUCED OR
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ACADEMIC PRESS, INC.
111 Fifth Avenue, New York, New York 10003
United Kingdom Edition published by
ACADEMIC PRESS, INC. (LONDON) LTD.
24/28 Oval Road, London NWl IDX
Library of Congress Cataloging in Publication Data
(Revised for volume 19)
Main entry under title:
Semiconductors and semimetals.
Includes bibliographical refercnccs and indexes.
Contents: v. 1-2. Physics of Ill-V compounds-.
v. 3. Optical properties of Ill-V compounds-
[etc.] -- v. 19. Deep levels, GaAs, alloys,
photochemistry.
1. Semiconductors--Collected works. 2. Semimetals--
Collected works. 1. Willardson, Robert K.
11. Beer, Albert C.
QC610.9.S47 537.6'22 65-26048
ISBN 0-12-7521 19-4
PRINTED IN THE UNITED STATES OF AMERICA
83 84 85 86 9 8 1 6 5 4 3 2 1
Contents
LISTO F CONTRIBUTOR.S . . . . . . . . . . . . vii
PREFACE. . . . . . . . . . . . . . . . ix
Chapter 1 Deep Levels in Wide Band-Gap
Semiconductors
111-V
G . F . Neurnark and K . Kosai
I . Introduction . . . . . . . . . . . . . . 1
I1 . Experimental Characterization of Deep Levels . . . . . . . 7
111 . Observation and Intercomparison of Deep Levels .
Results for GaAs and GaP . . . . . . . . . . . 2 0
IV . Theory of Recombination . . . . . . . . . . . 3 0
V . Analysis of Optical Cross Sections . . . . . . . . . 52
References . . . . . . . . . . . . . . 6 5
Chapter 2 The Electrical and Photoelectronic Properties
of Semi-Insulating GaAs
David C . Look
List of Symbols . . . . . . . . . . . . . 76
I . Introduction . . . . . . . . . . . . . . 7 7
. Hall Effect and Magnetoresistance . . . . . . . . . 77
I1
111 . Thermal Equilibrium Processes . . . . . . . . . . 8 6
IV . Nonequilibrium Processes . . . . . . . . . . . 9 6
V . Comparison of Techniques . . . . . . . . . . . 121
Appendix A . Charge Transport Theory . . . . . . . . 12 7
Appendix B . Semiconductor Statistics . . . . . . . . 14 8
Appendix C . Derivation of TSC and PITS Equations . . . . . 16 2
References . . . . . . . . . . . . . . 16 7
Chapter 3 Associated Solution Model for Ga-In-Sb
and Hg-Cd-Te
R . F . Brebrick. Ching-Hua Su. and Pok-Kai Liao
List of Symbols . . . . . . . . . . . . . 17 2
I . Introduction . . . . . . . . . . . . . . 17 3
I1 . Thermodynamic Equations for the Liquidus Surface of (A,-.B,)C(s) . . 178
111 . Solution Thermodynamics . . . . . . . . . . . 18 1
IV . Associated Solution Model for the Liquid Phase . . . . . . 186
V
vi CONTENTS
V . Ga-In-SbTernary . . . . . . . . . . . . 19 7
VI . Hg-Cd-TeTernary . . . . . . . . . . . . 214
VII.Sununary . . . . . . . . . . . . . . 23 0
AppendixA . . . . . . . . . . . . . . 231
Appendix B . . . . . . . . . . . . . . 234
AppendixC . . . . . . . . . . . . . . 24 2
References . . . . . . . . . . . . . . 251
Chapter 4 Photoelectrochemistry of Semiconductors
Yu . Yu. Gurevich and Yu . V . Pleskov
List of Symbols . . . . . . . . . . . . . 256
I . Introduction . . . . . . . . . . . . . . 257
I1 . General Concepts of the Electrochemistry of Semiconductors . . . . 259
.
III The Theory of Processes Caused by Photoexcitation
of Semiconductors . . . . . . . . . . . . 273
IV . Photocorrosion and Its Prevention . . . . . . . . . 282
V . Light-Sensitive Etching of Semiconductors . . . . . . . 294
. Processes Caused by Photoexcitation of Reactants in the Solution . . . 30 3
VI
VII . Selected Problems in the Photoelectrochemistry of Semiconductors . . . 31 0
VIII . Conclusion: Problems and Prospects . . . . . . . . . 323
References . . . . . . . . . . . . . . 324
INDEX . . . . . . . . . . . . . . . . 32 9
CONTENTOSF PREVIOUSV OLUMES . . . . . . . . . . 339
List of Contributors
Numbers in parentheses indicate the pages on which the authors’ contributions begin
R. F. BREBRICKM, aterials Science and Metallurgy Program, College of
Engineering, Marquette University, Milwaukee, Wisconsin 53233
(171)
Yu. YA. GUREVICHIn,s titute of Electrochemistry, Academy of Sciences
of the USSR, 117071 Moscow, USSR (255)
K. KOSAI,P’ hilips Laboratories, Briarcliff Manor, New York 10510 (1)
POK-KAIL IAO,M aterials Science and Metallurgy Program, College of
Engineering, Marquette University, Milwaukee, Wisconsin 53233
(171)
DAVIDC . LOOK,U niversity Research Center, Wright State University,
Dayton, Ohio 45435 (75)
G. F. NEUMARPKhi,l ips Laboratories, Briarcliff Manor, New York 10510
(1)
Yu. V. PLESKOVIn, stitute of Electrochemistry, Academy of Sciences of
the USSR, 117071 Moscow, USSR (255)
CHING-HUAS u, Materials Science and Metallurgy Program, College of
Engineering, Marquette University, Milwaukee, Wisconsin 53233
(171)
I Present address: Santa Barbara Research Center, Goieta, California 931 17.
vii
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Preface
This treatise reflects the rapid growth in the field of semiconductors and
semimetals. Chapters 1 and 2 of the present volume are concerned with
deep levels in wide band-gap III-V compounds and the measurement
techniques used to characterize such levels. These chapters provide a
background for the next volume, which will address the use of semi-
insulating GaAs in digital and microwave integrated circuits (ICs) as well
as providing valuable insight into methods of improving solar cells, lasers,
and light-emitting diodes (LEDs). Chapter 3 in the present volume is
concerned with thermodynamic modeling to improve Hg-Cd-Te phase
diagrams applicable to the infrared detector arrays discussed in Volume
18 of this treatise. Chapter 4 treats photoelectrochemistry (PEC), an
emerging technology.
Chapter 1 focuses on the characteristics of deep states in wide band-gap
III-V compound semiconductors, particularly the recombination proper-
ties which control minority-carrier lifetime and luminescence efficiency.
These properties are significant for many optoelectronic devices, includ-
ing lasers, LEDs, and solar cells. While this review emphasizes areas of
extensive recent development, it also provides references to previous
comprehensive reviews. The compilation of levels reported in GaAs and
GaP since 1974 is an important contribution, as is the discussion of the
methods used to characterize these levels.
Recombination at and excitation from deep levels are emphasized.
Nonradiative transitions at defect levels-Auger, cascade capture, and
multiphonon emission processes-are discussed in detail. Factors to be
considered in the analysis of optical cross sections which can give infor-
mation about the parity of the impurity wave function and thus about the
symmetry of a particular center are reviewed.
In Chapter 2, not only are the electrical and optical properties of semi-
insulating GaAs discussed, but also the measurement techniques are criti-
cally reviewed. GaAs digital IC and monolithic microwave IC technolo-
gies are dependent on the development of reliable substrate materials and
an understanding of the deep levels of GaAs. Thus these first two chapters
provide an important background to the discussion of the crystal growth
and device fabrication techniques for GaAs, which are the subjects of
Volume 20 of this treatise “Semiconductors and Semimetals .”
Automated computer-controlled measurement techniques for Hall ef-
fect, photoconductivity, and photo-Hall measurements in semi-insulating
ix