Table Of ContentCrucial Issues in Semiconductor Materials
and Processing Technologies
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Series E: Applied Sciences· Vol. 222
Crucial Issues in
Semiconductor Materials
and Processing Technologies
edited by
S. Caffa, F. Priala, E. Rimini
Physics Department,
University of Catania,
Catania, Italy
and
J. M. Poate
AT& T BeII Laboratories,
Murray HUl, New Jersey, U.S.A.
Springer Science+Business Media, B.V.
Proceedings of the NATD Advanced Study Institute on
Semiconductor Materials and Processing Technologies
Erice, Italy
1-13 July 1991
Library of Congress Cataloging-in-Publication Data
NATO Advanced Study Institute on Semiconductor Materlals and
Processlng Technologles (1991 : Erlce, Italy)
Crucial issues in semiconductor materials and processing
technologies Proceedlngs of the NATO Advanced Study Institute an
Semiconductor Materials and Processlng Technologies, Erice, Italy,
July 1-13, 1991 ! edited by S. Coffa ... [et al.].
p. cm. -- (NATO ASI series. Series E, Appl ied sciences : val.
222)
Publlshed in cooperat Ion with NATO Scientific Affairs Dlvlsion.
Inc I udes Index.
ISBN 978-94-010-5203-0 ISBN 978-94-011-2714-1 (eBook)
DOI 10.1007/978-94-011-2714-1
1. Semlconductors--Congresses. 1. Coffa, S. II. North Atlantic
Trsaty Organization. Scientlflc Affairs Oivlsion. III. Title.
IV. Series: NATO ASI series. Series E • Applied sclences ; no. 222.
TK7871.85.N3766 1991
621.3815'2--dc20 92-33612
ISBN 978-94-010-5203-0
Printed an acid-tree paper
AII Rights Reserved
© 1992 Springer Science+Business Media Dordrecht
OriginallY published by Kluwer Academic Publishers in 1992
Softcover reprint of the hardcover lst edition 1992
No part of the material protected by this copyright notice may be reproduced or
utilized in any form or by any means, electronic or mechanical, including photo
copying, recording or by any information storage and retrieval system, without written
permission from the copyright owner.
CONTENTS
Preface xi
List of Contributors xv
Section 1: Materials & Devices
*Defect Aspects of Advanced Device Technologies
B. O. Kolbesen ................................................................................................................ .3
Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with
Very Thin PECVD a-Si02 Gate Dielectric
P. Foglietti, G. Fortunato, L. Mariucci and C. Reita ...................................................... 27
*Silicon and Silicon: Germanium Alloy Growth; Means and Applications
B. S. Meyerson ................................................................................................................. 33
*Preparation and Characterization of Silicon Ribbons
S. Sivoththaman and M. Rodot. ....................................................................................... .49
Rapid Thermal Chemical Vapor Deposition of Six Gel-x Alloys on Si and Si02 and
New Applications of Six Gel-x Alloys in Advanced MOSFET Processes
D. T. Grider, M. C. Oztiirk, S. Ashburn, M. Sanganeria, J. J. Wortman ......................... 55
*Kinetics and Dynamics of MBE Growth
B. A. Joyce ........................................................................................................................ 61
Effects of Near-Interface Defects on the Optical Properties of MBE Grown
GaAs/AIGaAs Layers
M. Jaraiz .......................................................................................................................... 79
*Optoelectric Materials
M. Quillec ........................................................................................................................ 83
Electrical Characteristics of PECVD Silicon Nitride/Compound Semiconductor
Interfaces for Optoelectronic Device Passivation
A. Piccirillo and P. E. Bagnoli ........................................................................................ 103
*Invited paper.
vi
Section 2: Processing Technologies
*Fundamentals of Semiconductor Processing
L. C. Kimerling ................................................................................................................ 111
Optical Analysis of Oxygen in Epitaxial Silicon
M. Geddo and B. Pivac .................................................................................................... 119
Electrical Properties of "Clean" and Fe-Decorated Stacking Faults in p-type Si
B. Fiegl and G. Zoth ........................................................................................................ 129
On the Dirty Contacts on n-type Silicon
A. Castaldini, D. Cavalcoli andA. Cavallini .................................................................. 135
Mossbauer Study of the DX-Center in Te-Implanted Alx Gal_ x As
H. Bemelmans, G. Borghs and G. Langouche ................................................................. 141
*Surface Science and Semiconductor Processing
F. W. Saris ....................................................................................................................... 147
*Lithography for Manufacturing at 0.25 Micrometer and Below
H. J. Smith and M. L. Schattenburg ................................................................................. 153
*Basic Aspects of Ion Implantation
E. Rimini .......................................................................................................................... 167
*Trends in Ion Implantation for Semiconductor and Optical Materials Research
J. M. Poate, D. C. Jacobson andD. J. Eaglesham .......................................................... 195
Orientation Phenomena in MeV Implants of P in Si
V. Raineri, G. Galvagno, F. Priolo and E. Rimini... ........................................................ 207
Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in
Angle Controlled N+ Implantation in Silicon
A. Gasparotto, A. Carnera, S. Acco and A. La FerIa ...................................................... 213
Dislocation Formation in Si Implanted at Elevated Temperature
J. R. Lie/ting, J. S. Custer, R. J. Schreutelkamp and F. W. Saris .................................... 219
Preparation and Characterization of Thin Film Simox Materials
A. Nejim and P. L. F. Hemment ....................................................................................... 225
*Invited paper.
vii
The Effect of Electronic Energy Loss on Epitaxial YBa2 CU3 07 Thin Films After
Heavy Ion Irradiation and Annealing up to Room Temperature
S. Henke, B. Hensel, B. Roas, S. Klaumiinzer, G. Saemann-Ischenko ............................. 233
Structural Study of The Epitaxial Realignment of Polycrystalline Si Films onto Si
Substrates
F. Benyaich, F. Priolo, E. Rimini, C. Spinella and P. Ward ........................................... 239
*Plasma Immersion Ion Implantation: A Perspective
C. Yu and N. W. Cheung .................................................................................................. 245
A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in
Inert-Gas Implanted Silicon
1. Yuan and 1. W. Corbett ................................................................................................ 251
Plasma Etching Processes
R. D'Agostino and F. Fracassi ........................................................................................ 257
Section 3: Insulating & Metallic Layers
*Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During
Electrical Stressing
M. M. Heyns and A. v.Schwerin ....................................................................................... 279
Minority Carrier Lifetime Measurements After High Temperature Pretreatment
M. Dammann, T. Stockmeier and H. Baltes ..................................................................... 299
*Copper-Based Metallization
1. Li, S. Hong, S. W. Russell and 1. W. Mayer ................................................................ .305
Thermal Stability of Ti-Mo and Ti-Cu Bilayer Thin Films on Alumina
1. Strane, 1. Li, S. W. Russell and 1. W. Mayer ................................................................ 321
Hyperfine Fields in Epitaxially Grown Co on GaAs
1. Dekoster, P. Belien, Y. Bruynseraede and G. Langouche ............................................ 327
Titanium Nitride Process Development
1. M. Molarius and M. Orpana ........................................................................................ 331
*Materials Aspects and Implementation of Silicides for ULSI
K.Maex ............................................................................................................................ 337
*Invited paper.
viii
Ion Beam Synthesis of Buried Iron Disilicide
K. Radermacher, S. MantI, R. Apetz, C. Dieker and H. Liith .......................................... 363
Diffusion in Cobalt Silicide During Silicide Fonnation
C. M. Comrie and J. E. McLeod ..................................................................................... .369
Fonnation of Gennanides by Rapid Thennal Annealing and Their Applications in
Advanced MOSFET Processes
S. P. Ashburn and M. C. Oztiirk ....................................................................................... 375
Section 4: Diffusion & Crystal Growth
*Diffusion in Crystalline Silicon and Gennanium - The State of the Art in Brief
W. Frank .......................................................................................................................... 383
Symmetry Methods in Diffusion
D. T. Wu .......................................................................................................................... .403
Diffusion of Gold in Sputtered Amorphous Silicon
A. V. Wagner, D. T. Wu and F. Spaepen ......................................................................... .409
Dopant Diffusion and Point Defects in Silicon During Silicidation
J. W. Honeycutt and G. A. Rozgonyi ............................................................................... .415
Lateral Diffusion Couples and Their Contribution to Understanding Thin Film
Reactions
B. Blanpain ..................................................................................................................... .421
*Diffusion and Defects in Amorphous Silicon
S. Coffa and J. M. Poate ................................................................................................. .427
EPR Study of Defects Produced by MeV Ion Implantation into Silicon
L. T. Sealy and R. C. Barklie .......................................................................................... .445
Vacancy Character of Damage Zones in Ion-Irradiated Silicon
P. J. Simpson, M. Vos, C. Wu, I. V. Mitchell and P. J. Schultz ...................................... .451
Multiple Amorphous States in Ion Implanted Semiconductors (Si and InP)
H. Bernas, M. O. Ruault and Ping Zheng ........................................................................ 459
*Invited paper.
ix
*The Mechanism of Solid Phase Epitaxy
M. J. Aziz ......................................................................................................................... .465
The Amorphous Side of Solid Phase Epitaxy
J. S. Custer ......................................... ~ ............................................................................ .477
*Metal-Enhanced Growth of Silicon
F. Spaepen, E Nygren and A. V. Wagner ........................................................................ .483
*Ion-Assisted Phase Transitions in Silicon
F. Priolo and A. Battaglia ............................................................................................... 501
Ion-Assisted Nucleation in Amorphous Silicon
A. Battaglia, C. Spinella, F. Priolo and S. U. Campisano .............................................. 523
List of Participants ........................................................................................................... 529
Index ................................................................................................................................ 535
*Invited paper.
PREFACE
This book details a school we held at the Ettore Majorana Center, Erice in July 1991.
The subject was the role that materials science and processing play in the semiconductor
industry and the goal was to identify some of the crucial issues. The semiconductor
industry is one of the most important of the twentieth century and its evolution will
impact us all. The industry is at such a level of maturity that a school can no longer just
concentrate on the purely scientific issues but must also address the manufacturing and
economic concerns. These latter issues have traditionally been outside the framework of
our community. In this school, however, we assembled experts from academia, industrial
laboratories and factories to discuss some of these issues.
An overriding concern for the participants was the economic basis of our field. The
semiconductor industries in Europe and the USA are being confronted by intense
technological competition from Japanese companies and the financial issues of the
enormous cost of Si fabrication equipment. These problems are related and are causing
considerable concerns about the future of our scientific disciplines and our industries. In
the past two decades the Japanese have identified Si technology as the most important
industry of our time and have done a marvelous job in advancing this technology.
Although we understand this competition, we are faced with a more pressing problem in
the West which is the shortage of capital. The cost of constructing a Si manufacturing
line with advanced technology is now approaching a billion dollars. Individual countries
and companies in the West can no longer sustain such an effort. What we are seeing
now, therefore, is the establishment of consortia between companies and countries to
share this burden. This is a new mode of operation and the alliances are still in an
evolutionary and changing state. Although these political and economic issues are
outside our usual focus we must become more committed to demonstrating the essential
role that our disciplines play in our societies. It is not only the research scientists and
manufacturing line technologists who are at risk but also the future technologies of our
society. Advances in such diverse fields as medical instrumentation and
telecommunications will be driven by future developments in semiconductor science and
technology. .
While these economic realities are sobering there was much excitement at the school in
the realization that our scientific and technological fields are now moving in new
directions. The complexity of Si integrated circuits is such that materials, defects and
processing have to be understood in their totality. The many contributions to the school
consist of invited papers, which are meant to introduce crucial issues and are authored by
the lecturers, and contributed papers presented by students at the school. The papers are
grouped into four sections.
xi
