CMOS 60-GHz and E-band Power Amplifiers and Transmitters

188 Pages·2015·8.69 MB·English

by  Dixian Zhao

ACSP · Analog Circuits And Signal Processing
Dixian Zhao
Patrick Reynaert
CMOS 60-GHz
and E-band
Power Amplifi ers
and Transmitters
Analog Circuits and Signal Processing
Serieseditors
MohammedIsmail,Dublin,USA
MohamadSawan,Montreal,Canada
Moreinformationaboutthisseriesathttp://www.springer.com/series/7381

Dixian Zhao • Patrick Reynaert
CMOS 60-GHz and E-band
Power Amplifiers and
Transmitters
123
DixianZhao PatrickReynaert
NationalMobileCommunication ESAT-MICAS
ResearchLaboratory KULeuven
SoutheastUniversity Leuven,Belgium
Nanjing,China
ISSN1872-082X ISSN2197-1854 (electronic)
AnalogCircuitsandSignalProcessing
ISBN978-3-319-18838-6 ISBN978-3-319-18839-3 (eBook)
DOI10.1007/978-3-319-18839-3
LibraryofCongressControlNumber:2015939179
SpringerChamHeidelbergNewYorkDordrechtLondon
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Preface
The rapid growth of mobile data and the use of smart phones are making
unprecedented challenges for wireless service providers to overcome a global
bandwidthshortage.Millimeter-wave(mm-Wave)technologyiswidelyconsidered
asoneofthekeytechnologiesthatwillcontinuetoservetheconsumerdemandfor
increased wireless data capacity. Meanwhile, the advanced CMOS can now well
operate in mm-Wave bands, permitting the integration of a full transceiver in a
low-cost,high-yieldtechnology.
However, the design of a mm-Wave transceiver in advancedCMOS still poses
many challenges at device, circuit, and architecture levels. In addition to generic
difficulties, such as high-frequency operation and low active gain, mm-Wave
designersmustdealwithissueslikelowbreakdownvoltage,highinterconnectloss,
unwantedmutualcoupling,poordevicematching,inaccuratePDKhigh-frequency
models, strict design rules, long EM-simulation time, etc. At transmitter side, all
thesecriticalissueslimittheoutputpowerandefficiency,prolongthedesigntime,
andmakeitdifficulttoguaranteethesuccessoftape-out.
This book focuses on the techniques to realize compact CMOS mm-Wave
transmitters(TXs) andpoweramplifiers(PAs) towardsmoreoutputpower,higher
efficiency, and broader bandwidth. To address design challenges at mm-Wave,
novel design techniques will be introduced, such as optimal transistor layout,
enhanced amplifier stage, and broadband power combiner. Design methodologies
will be presented to deal with the long EM-simulation time and strict design
rules. In addition, detailed design issues, such as common-mode stability and
magnetic mutual coupling, will also be covered in the book. All the proposed
design techniques will be applied to five prior-art designs that are implemented
and measured in the context of this work. These designs include (1) a 60-GHz
outphasingTXwhichisthefirstapplicationofoutphasingtechniqueatmm-Wave;
(2) a 60-GHz dual-mode Class AB PA which is the first dual-modePA presented
at 60GHz and achievesa recordedPAE of 30%; (3) an E-banddirect-conversion
TXthatshowsmeasured4.5-Gb/s64-QAMand14-Gb/s16-QAM;(4)abroadband
v
vi Preface
4-way E-band PA which is the first reported silicon-based PA achieving uniform
gain,outputpower,andPAEacrossthecompleteE-band;and(5)a 4-wayE-band
PA based on neutralized bootstrapped amplifier topology that shows the highest
reportedpowergainperstage.
Nanjing,China DixianZhao
Leuven,Belgium PatrickReynaert
May2015
Contents
1 Introduction .................................................................. 1
1.1 WhyMillimeter-Wave?................................................. 1
1.2 mm-WaveApplicationsandPrior-Arts ................................ 2
1.3 DesignChallenges ...................................................... 6
1.4 OutlineofThisBook ................................................... 9
References..................................................................... 10
2 PAandTransmitterBasics.................................................. 13
2.1 Introduction ............................................................. 13
2.2 PABasics................................................................ 13
2.2.1 GainMatchandPowerMatch ................................. 13
2.2.2 DrainEfficiencyandPAE ...................................... 14
2.2.3 PAClasses....................................................... 16
2.2.4 PowerCombiningTechnique .................................. 18
2.3 TransmitterBasics ...................................................... 21
2.3.1 TransmitterArchitectures ...................................... 21
2.3.2 TransmitterNon-idealities...................................... 23
2.4 LinkBudgetforWirelessCommunications ........................... 28
2.5 Conclusions ............................................................. 31
References..................................................................... 31
3 mm-WaveActiveandPassiveDevices..................................... 33
3.1 Introduction ............................................................. 33
3.2 ActiveDevice ........................................................... 34
3.2.1 InfluenceofDeviceParasiticsandLongIntraconnects....... 34
3.2.2 mm-WavePowerTransistorLayout ........................... 36
3.2.3 NeutralizedAmplifierStage.................................... 39
3.3 PassiveDevice .......................................................... 43
3.3.1 InductorsandLossMechanisms............................... 43
3.3.2 Capacitors....................................................... 44
3.3.3 TransmissionLines............................................. 49
vii
viii Contents
3.3.4 Transformers.................................................... 52
3.3.5 InfluenceofMetalFills......................................... 54
3.4 Conclusions ............................................................. 55
References..................................................................... 56
4 Low-Power and Efficiency Enhancement Techniques
formm-WavePAs............................................................ 59
4.1 Introduction ............................................................. 59
4.2 Low-PowerandHigh-EfficiencyTechniques.......................... 60
4.2.1 ClassABOperation............................................. 60
4.2.2 Dual-ModePA.................................................. 62
4.2.3 Digital-ControlledPolarTransmitter .......................... 63
4.2.4 OutphasingPA.................................................. 64
4.2.5 DohertyPA...................................................... 65
4.3 DesignExample:A60-GHzClassABDual-ModePA............... 67
4.3.1 PATopology .................................................... 68
4.3.2 Dual-ModePowerCombiner................................... 70
4.3.3 MeasurementResults........................................... 72
4.3.4 LongTermReliability.......................................... 82
4.4 Conclusions ............................................................. 83
References..................................................................... 84
5 mm-WaveOutphasingTransmitter........................................ 87
5.1 Introduction ............................................................. 87
5.2 OutphasingPAvs.LinearPAatmm-Wave............................ 88
5.3 OutphasingSignalCombining ......................................... 90
5.3.1 IsolatingandNon-isolatingCombiners........................ 90
5.3.2 Transformer-Based Combiner and Load
ModulationEffect .............................................. 92
5.3.3 SignalCombiningbyBeamforming........................... 93
5.4 OutphasingNon-idealities.............................................. 94
5.4.1 OutphasingSignalBandwidth ................................. 94
5.4.2 MismatchBetweenSignalPaths............................... 96
5.5 DesignExample:A60-GHzOutphasingTransmitter................. 99
5.5.1 TransmitterImplementation.................................... 99
5.5.2 PAandCombiner............................................... 101
5.5.3 FloorPlan ....................................................... 103
5.5.4 OutphasingAngleClipping .................................... 104
5.5.5 MeasurementResults........................................... 105
5.5.6 Comparison ..................................................... 111
5.6 Conclusions ............................................................. 112
References..................................................................... 113
Contents ix
6 mm-WaveBroadbandDirect-ConversionTXTowards10+Gb/s....... 115
6.1 Introduction ............................................................. 115
6.2 LOLeakageandI/QImbalance........................................ 116
6.2.1 LOLeakageandCalibration ................................... 116
6.2.2 I/QImbalanceandCalibration................................. 118
6.3 DesignExample:A64-QAME-BandTX............................. 119
6.3.1 SystemArchitecture............................................ 119
6.3.2 I/QModulatorwithLOLeakageCalibration.................. 120
6.3.3 PPFwithI/QImbalanceCalibration........................... 124
6.3.4 PowerAmplifier ................................................ 129
6.3.5 MeasurementResultsandDiscussions ........................ 129
6.4 Conclusions ............................................................. 134
References..................................................................... 137
7 mm-WaveBroadbandPowerAmplifierTowards20+dBm ............. 139
7.1 Introduction ............................................................. 139
7.2 Single-StageAmplifier ................................................. 140
7.2.1 NCSAmplifier.................................................. 140
7.2.2 CascodeAmplifier.............................................. 142
7.3 BroadbandPowerCombiner ........................................... 145
7.3.1 SeriesPowerCombiner......................................... 145
7.3.2 ParallelPowerCombiner....................................... 146
7.3.3 Parallel-SeriesPowerCombiner ............................... 147
7.4 DesignExample1:ABroadbandE-BandPowerAmplifier.......... 149
7.4.1 Implementation ................................................. 149
7.4.2 MeasurementResults........................................... 151
7.5 DesignExample2:AnE-bandNeutralizedBootstrapped
CascodePowerAmplifier............................................... 157
7.5.1 NeutralizedBootstrappedCascodeAmplifier................. 157
7.5.2 Implementation ................................................. 159
7.5.3 MeasurementResults........................................... 162
7.6 Conclusions ............................................................. 167
References..................................................................... 169
8 ConclusionandOutlook..................................................... 171
8.1 Summary ................................................................ 171
8.2 MajorContributions .................................................... 172
8.3 FutureWork............................................................. 173
References..................................................................... 174
Index............................................................................... 177