Table Of ContentChemical Physics of Thin Film Deposition
Processes for Micro- and Nano-Technologies
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Series II: Mathematics, Physics and Chemistry - Voi. 55
Chemical Physics
of Thin Film Deposition Processes
for Micro- and Nano-Technologies
edited by
Yves Pauleau
School of Electrochemical and Electrometallurgical Engineering,
National Polytechnic Institute of Grenoble, Grenoble, France
....
"
Springer-Science+Business Media, B.V.
Proceedings of the NATO Advanced Study Institute on
Chemical Physics ofThin Film Deposition Processes for Micro-and Nano-Technologies
Kaunas, Lithuania
3-14 September 2001
A C.1. P. Catalogue record for this book is available from the Library of Congress.
ISBN 978-1-4020-0525-1 ISBN 978-94-010-0353-7 (eBook)
DOI 10.1007/978-94-010-0353-7
Printed on acid-free paper
AII Rights Reserved
©2002 Springer Science+Business Media Dordrecht
Originally published by Kluwer Academic Publishers in 2002
Softcover reprint of the hardcover 1st edition 2002
No part of the material protected by this copyright notice may be reproduced or utilized in
any form or by any means, electronic or mechanical, including photocopying, recording
or by any information storage and retrieval system, without written permission from the
copyright owner.
TABLEOFCONTENTS
Preface vii
ListofParticipants ix
ListofContributors Xlll
ELECTROPLATINGANDELECTROLESSDEPOSITIONPROCESSESFOR
ELECTRONICCOMPONENTSANDMICROSYSTEMS
T.E.G. Daenenand D.L.deKubber
SELF-ASSEMBLEDELECTROACTNEULTRATHINFILMS
T.P. Cassagneau 19
FEATUREANDMECHANISMSOFLAYERGROWfHINLIQUIDPHASE
EPITAXYOFSEMICONDUCTORMATERIALS
M. Konuma 43
SOL-GELDEPOSITIONPROCESSESOFTHINCERAMICFILMS
D. Sporn, P. LObmann, U. Guntow,andW. Glaubitt 69
THINFILMDEPOSITIONBYSOL-GELANDCVDPROCESSINGOF
MErAL-ORGANICPRECURSORS
S.Mathur 91
NUMERICALSIMULATIONOFFLOWANDCHEMISTRYINTHERMAL
CHEMICALVAPORDEPOSITIONPROCESSES
e.R.Kleijn 119
CHEMICALVAPORDEPOSITIONOFSUPERCONDUCTORAND
OXIDEALMS
G. Wahl,J.Arndt,andO. Stadel 145
SELECTNECHEMICALVAPORDEPOSITION
1.Holleman 171
PHOTOCHEMICALVAPOURDEPOSITIONOFTHIN ALMS
Sl.e. Irvine 199
REACTION MECHANISMSINLASER-ASSISTEDCHEMICALVAPOR
DEPOSITIONOFMICROSTRUCTURES
Y. PauleauandD.Tonneau 223
VI
PROXIMALPROBEINDUCEDCHEMICALPROCESSINGFOR
NANODEVICEELABORATION
D.Tonneau, N.Clement,A. Houel, N. Bonnail,H. Dallaporta.and
V. Safarov 255
MOLECULARDYNAMICSSIMULATIONOFTHIN ALMGROWTH WITH
ENERGETICATOMS
C.M.GilmoreandJ.A. Sprague 283
DEPOSITIONOFTHIN ALMS BYSPUTTERING
W. Gulbinski 309
MASS-TRANSPORTIN ANAUSTENITICSTAINLESSSTEELUNDER
HIGH-FLUX,LOW-ENERGY NITROGEN IONBOMBARDMENTAT
ELEVATEDTEMPERATURE
L. Pranevicius,C.Templier,J.-P. Riviere,S. Muzard,J. Dudonis,
L.L. Pranevicius,D. Milcius,andG. Abrasonis 335
INDEX 361
PREFACE
Conductive, dielectric, semiconducting, superconducting, magnetic, piezoelectric and
ferroelectric thin films are currently deposited or synthesized for advanced micro- and
nano-technologies (microelectronics, optoelectronics, optics, sensors, Microsystems, etc.).
These films can be deposited by various techniques such as electroplating, liquid phase
epitaxy, sol-gel, physical and chemical vapor deposition (PVO and CVO). Highly
sophisticated deposition techniques based on ion beam, laser beam, plasma and vacuum
technology are now emerging from laboratories and some ofthem are achieving mature
development for applications in thin film technology. This diversity increases the
complexity of the field of thin film deposition processes, which are critical steps in the
fabrication ofdevicesforfuture andemergingtechnologies. Aparticularchallengefor the
industry is toestablish and develop technological facilities required for the production of
thin films. The developmentoftechniques and the achievement ofa good understanding
of the basic physical and chemical aspects involved in the deposition of thin films are
crucial points for the successful production of devices required for information society
technologies. However, it becomes difficult to maintain a clear overlook and
understandinginthisveryinterdisciplinaryfieldofresearchandapplications.
The main objectives ofthis NATO-ASI on "Chemical Physics ofThin Film Deposition
Processes for Micro- and Nano-Technologies" held in September 2001 in Kaunas,
Lithuania were :(i) to address the state ofthe art in thinfilm deposition processes with
emphasis on gas-phase and surface chemistry and its effects on growth rates and
properties of films for micro- and nano-technologies, (ii) to bring together an
international group of physicists, chemists, researchers, engineers and internationally
recognized lecturers in the field ofthin film process engineering, and (iii) to learn each
other and discuss about fundamentals of film growth processes and deposition
techniques.
The program was composed of four groups of lectures or key notes : (I) deposition
processes of thin films from liquid solutions, (2) thermally-activated chemical vapor
deposition processes of thin films, (3) photon and ion beam-induced chemical vapor
deposition processes of microstructures, and (4) energetic physical vapor deposition
processesofthinfilms.
The major topics covered by this ASI include : electroplating and electroless deposition
processes for electronic components and microsystems, self-assembled electroactive
ultrathin films, reaction mechanisms in sol-gel deposition processes ofthin films, feature
and mechanisms of layer growth in liquid phase epitaxy of semiconductor materials,
numerical modeling of flow and chemistry in thermal chemical vapor deposition,
chemical vapordepositionofsuperconductorand oxidefilms, thin film deposition by 801
gel and chemical vapor deposition processing of metalorganic precursors, reaction
mechanismsinchemicalvapordepositionofnickel,aluminum, tungsten andcopperfilms,
selective chemical vapor deposition of thin films, photochemical vapor deposition of thin
films, reaction mechanisms in laser-assisted chemical vapor deposition of metal and
silicon microstructures, proximal probe induced chemical processing for nanodevice
elaboration, molecular dynamics simulation of thin film growth with energetic atoms,
deposition of thin films by sputtering, mass transport process in alloys under high flux,
vii
viii
low energy, elevated temperature nitrogen ion bombardment, molecular ways to
nanoparticlesand films, non-destructivecharacterization ofmechanical properties ofnon
homogeneous nanostruetured films, fundamental aspects, principles and fabrication
processesofsingleelectrondevices.
Fundamental aspects related to thin fIlm deposition processes that are very crucial to
control the properties of thin fIlms and microstructures were investigated in detail and
presented at a tutorial level. These highly sophisticated deposition processes involve gas
phase phenomena, surface chemistry, growth mechanisms and modeling approach. These
various points were thoroughly described and discussed to providea clearunderstanding
of the growth of thin films and microstructures via thermally-activated, laser-induced,
photon-assisted, ion beam-assisted and plasma-enhanced vapor deposition processes. All
the stepsfrom theory to experimental procedures and real fabrication problems ofmicro
andnano-devicesreceivedasuitablefocus.
Inaddition to 15 lecturesand 3 keynotes, twoafternoon sessionsand four evening poster
sessions were held for presentation of 56 contributed papers related to topics described
previously. Ninegroupdiscussions wereorganizedtodiscuss indetailaboutthefollowing
subjects: (1) control ofthe morphology offilms, (2) role offluid dynamics in thin fIlm
deposition processes, (3) precursors and fIlms produced by sol-gel processes, (4)
fundamental precursor-material correlation : from molecular clusters to nanoscale
materials, (5) novelcharacterizationtechniques tocontrol nanoscalesystems: growthand
mechanical properties, (6) structure-oontrolled magnetic properties in electrochemically
deposited thin films, (7) epitaxial growth ofmetastablecompounds, (8) major parameters
to be controlled in thin film deposition, and (9) recent advances and perspectives in III
nitridestechnology.
The 76 participants represented universities (79 %), private companies (1.3 %) and
government-supported research laboratories (20 %). These participants came from
NATO countries (54 %), Eligible Partner countries (36 %), Mediterranean Dialogue
countries (7.9 %) and Non-Eligible Partnercountries or European Union memberstates
which are not NATO countries (1.3 %). During these two weeks, all participants
worked very intensively with a very high regular attendance to lectures and other
technical or social activities. The highly interdisciplinary nature of the ASI allowed
participants to interchange ideas in an environment incentive to exchange of expertise
and scientific discussions. As a result, this ASI has opened a window of opportunities
forinternationalcollaborationsand preparationofcollaborativeresearchprograms.
We would like to acknowledge the financial supports of NATO through the Scientific
Affairs Division, the European Commission for a grant supporting the participation of
young European scientists as well as additional supports provided by the Office of
Naval Research, International Field Office (ONRIFO). Inaddition, weare grateful to all
programadministratorsand/ordirectorsand all the personnel in the Agencies mentioned
above as well as to the personnel ofthe Takioji Neris hotel in Kaunas who contributed
withtheirwork, inonewaytoanother, tothesuccessofthisAdvancedStudyInstitute.
Y. Pauleau
Grenoble,France
October30,2001
LISTOFPARTICIPANTS
G. Abadias, Laboratoire de Metallurgie Physique, SP2MI, Teleport 2, Boulevard Marie
etPierreCurie,B.P. 30179,86962Chasseneuil-FuturoscopeCedex,France.
M.A. Abdellateef,PhysicsDepartment,FacultyofScience,Sohag, Egypt.
R. AbdelRassoui, Mansoura University, Faculty of Engineering Communications and
ElectronicsEng.Dept,Mansoura35516,Egypt
S. Aizikovich, Rostov State University, Institute for Mechanics and Applied
Mathematics,P.O. Box4845,344090Rostov-on-Don,Russia.
L. Augulis, Department of Physics, Kaunas University of Technology, Studentu 50,
3031 Kaunas, Lithuania.
R. Bankras, University of Twente, Dept EUHC, P.O. Box 217, 7500 AE Enschede,
TheNetherlands.
J. Baranowska, Technical University of Szczecin, Institute ofMaterials Engineering, aI.
Piastow 19,70-310Szczecin,Poland.
A. Biedunkiewicz,Technical University ofSzczecin, Institute ofMaterials Engineering,
al. Piastow 19,70-310Szczecin,Poland.
P. Bilkova, Charles University, Department of Macromolecular Physics, V
Holesovickach2, 18000Prague8,CzechRepublic.
V. Boev,UniversidadedoMinho,DepartamentodeFisica,4710-057Braga,Portugal.
E. Boguslavsky, Institute of Inorganic Chemistry, Lavrent'ev Avenue 3, Novosibirsk
90,630090,Russia.
A.S. Bouazzi,E.N.I.T.,P.O. Box37,Tunis-Belvedere 1012,Tunisia.
T.Car,RuderBoskovicInstitute,Bijenickacesta52, 1ססooZagreb,Croatia.
A.R. Casavola, Universita degli Studi di Bari, Departimento di Chimica, V. Orabona4,
70126Bari,Italy.
Th. Cassagneau, Max Planck Institute for Colloids and Interfaces, Am Muehlenberg 1,
14476Golm,Germany.
M.Cekada,JozefStefanInstitute.Jamova39, 1000Ljubljana.Slovenia.
C. Chacon-Carrillo, Royal Institute of Technology (KTH), Materials Physics,
Teknikringen 14, 10044Stockholm,Sweden.
J. Cizek, Department of Physics, University of West Bohemia, Univerzitni 22, 306 14
Plzen,CzechRepublic.
Th.E.G. Daenen, Philips Galvanotechniek Eindhoven, Bldg SFO-130, P.O. Box 218,
5600MD Eindhoven,The Netherlands.
P. Docheva, Rousse University, Department of Physics, 8 Studentska Street, 7017
Rousse, Bulgaria.
S. Dub, Institute for Superhard Materials ofthe UAS, Autozavodskaya 2, Kiev, 04074
Ukraine.
N. Dukstiene, Kaunas University of Technology, Physical Chemistry Department,
RadvileneStr. 19,3028Kaunas, Lithuania.
M. Emziane, University of Liverpool, Materials Science and Engineering, Department
ofEngineering,Liverpool,1.693GH,U.K.
Y.M. Fahmy, National Research Center, Chemical Engineering and Pilot Plant Dept.,
Dokki,Cairo,Egypt.
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x
R. Fritsche, Darmstadt University of Technology, Department of Materials and
Geoscience,SurfaceScienceDivision,Petersenstrasse23,Darmstadt,Germany.
A. Galdikas, Physics Department, Kaunas University of Technology, 50 Studentu
Street,3031 Kaunas, Lithuania.
N. Gaponenko, Belarussian State University of Informatics and Radioelectronics, P.
Browki Street6,220027Minsk, Belarus.
C.M. Gilmore, The George Washington University, Institute for Materials Science,
SchoolofEngineeringandAppliedScience,Washington D.C.20052,U.S.A.
D. Grigoriev, Department of Materials, Imperial College of Science, Technology and
Medicine,PrinceConsortRoad,LondonSW72BP,U.K.
W. Gulbinski, Technical University of Koszalin, Faculty of Mechanical Engineering,
DepartmentofPhysics,75-620Koszalin, Poland.
J. Holleman, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE
Enschede,TheNetherlands.
I. Holowacz, Institute of Physics, Wroclaw University of Technology, Wybneze
Wyspianskiego27,50370Wroclaw, Poland.
SJ.c. Irvine, Department of Chemistry, University of Wales Bangor, Gwynedd LL57
2UW,U.K.
V. Kagadei, Research Institute of Semiconductor Devices, 99-A Krasnoarmeiskaya
Street,634034Tomsk,Russia.
c.R. Kleijn, Delft University of Technology, Kramers Laboratorium voor Fysische
Technologie,PrinsBemhardlaan6,2628BWDelft,TheNetherlands.
J. Kois, Institute ofMaterialsTechnology, TallinnTechnical University, Ehitajate tee 5,
19086Tallinn,Estonia.
M. Konuma, Max-Planck-Institut ftir Festkorperforschung, Heisenbergstrasse I, 70569
Stuttgart,Germany.
T. Kopac, Zonguldak: Karaelmas University, Department of Chemistry, 67100
Zonguldak,Turkey.
A. Kovach, Research Institute for Technical Physics and Materials Science, Konkoly
Thege51.29-33, 1121 Budapest,Hungary.
D. Kraft, Darmstadt University of Technology, Department of Materials and
Geoscience,SurfaceScienceDivision,Petersenstrasse23,64287Darmstadt,Germany.
D. Lamb,ChemistryDepartment,UNW, Bangor,Gwynedd, LL572UW,U.K.
G. Laukaitis, Kaunas University ofTechnology, Physics Department, Studentu 50, 3031
Kaunas, Lithuania.
A. Laurinavicius, Semiconductor Physics Institute, A. Gostauto Il, 2600 Vilnius,
Lithuania.
M. Lechna-Marczynska, Institute of Physics, Wroclaw University of Technology,
WybnezeWyspianskiego27,50370Wroclaw, Poland.
P. Mandracci, Politecnicodi Torino, Departimentodi Fisica, Corso Ducadegli Abruzzi,
24, 10129Torino,Italy.
A. Maruska, Vytautas Magnus University, Department of General and Biological
Chemistry,Vileikos8,3035 Kaunas, Lithuania.
S. Mathur, Saarland University, Institute of Inorganic Chemistry, 1m Stadwald, 66041
Saarbriicken,Germany.
