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About Chapter 4 Physics of Bipolar Transistors
This document summarizes the key physics concepts behind bipolar junction transistors (BJTs). It describes the structure of NPN and PNP BJTs and their operation in the forward active, saturation and deep saturation regions. The key electrical characteristics of BJTs like collector current, transconductance and early effect are explained. Equivalent circuit models including large-signal, small-signal and early effect models are presented. Important parameters like current gain and input/output resistances are also defined.
Detailed Information
| Author: | ['mkmkmkmk2'] |
|---|---|
| Publication Year: | 2013 |
| Pages: | 54 |
| Language: | English |
| Format: | |
| Price: | FREE |
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