Broadband, Fully Differential 14-/16-Bit ADC Driver Amplifier.. datasheet

36 Pages·2017·2.26 MB·English

THS770012
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Broadband, Fully-Differential, 14-/16-Bit ADC Driver Amplifier
CheckforSamples:THS770012
FEATURES DESCRIPTION
1
• 900MHzBandwidthatGainof+10dB The THS770012 is a wideband, fully-differential
23 amplifier, with adjustable gain range from +10dB to
• 3300V/µsSlewRate,V =2Vstep
OUT +13.7dB (with external components). It is designed
• AdjustableGain:+10dBto+13.7dB and optimized specifically for driving 16-bit
• IMD :–100dBc,V =2V ,R =400Ω, analog-to-digital converters (ADCs) at input
3 OUT PP L
f=100MHz frequencies up to 130MHz, and 14-bit ADCs at input
frequencies up to 200MHz. This device provides high
• OIP3: 47dBm,f=100MHz
bandwidth, high-voltage output with low distortion and
• NoiseFigure:10.7dB,f=100MHz low noise, critical in high-speed data acquisition
systems that require very high dynamic range, such
APPLICATIONS as wireless base stations and test and measurement
applications. This device also makes an excellent
• 14-/16-BitADCDriver
differential amplifier for general-purpose, high-speed
• ADCDriverforWirelessBaseStationSignal differential signal chain and short line driver
Chains:GSM,WCDMA,MC-GSM,LTE applications.
• ADCDriverforHighDynamicRangeTestand
The THS770012 operates on a nominal +5V single
MeasurementEquipment supply, offers very fast, 7.5ns maximum recovery
time from overdrive conditions, and has a
Figure1. THS770012Driving16-BitADC power-down mode for power saving. The THS770012
is offered in a Pb-free (RoHS compliant) and green,
200W QFN-24 thermally-enhanced package. It is
characterized for operation over the industrial
VIN- 50W RO 30MHz AIN+ temperaturerangeof–40°Cto+85°C.
VOCM Bandpass 16-BitADC
VIN+ Filter AIN- RELATEDDEVICES
50W 200W RO
VOCM DEVICE DESCRIPTION
THS770012 FixedGainof+6dB,wideband,low-noise,
THS770006
(G=12dB) low-distortion,fully-differentialamplifier
Wideband,low-noise,low-distortion,
Figure2. FFTPlotwithTwo-ToneInputat96MHz THS4509 fully-differentialamplifier
and100MHz(seeApplicationInformationsection)
Wideband,low-noise,low-distortion,
0 PGA870 fully-differential,digitally-programmable
gainamplifier
-10
-20 ADS5481to
16-bit,80MSPSto200MSPSADCs
-30 ADS5485
-40 ADS6145 14-bit,125MSPSADC
-50
FS -60 ADS6149 14-bit,250MSPSADC
dB -70
-80
-90
-100
-110
-120
-130
0 5 10 15 20 25 30 35 40 45 50 55 60 65
Frequency - MHz
1
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas
Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PowerPADisatrademarkofTexasInstruments.
2
Allothertrademarksarethepropertyoftheirrespectiveowners.
3
PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2010–2012,TexasInstrumentsIncorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarilyincludetestingofallparameters.
THS770012
SLOS669C–FEBRUARY2010–REVISEDJANUARY2012 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriateprecautions.Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmaybemore
susceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
PACKAGE/ORDERINGINFORMATION(1)
SPECIFIED
PACKAGE PACKAGE PACKAGE ORDERING TRANSPORT
PRODUCT TEMPERATURE
TYPE DESIGNATOR MARKING NUMBER MEDIA,QUANTITY
RANGE
THS770012IRGE THS770012IRGET Tapeandreel,250
THS770012 VQFN-24 RGE –40°Cto+85°C
THS770012IRGE THS770012IRGER Tapeandreel,3000
(1) ForthemostcurrentpackageandorderinginformationseethePackageOptionAddendumattheendofthisdocument,orvisitthe
deviceproductfolderonwww.ti.com.
Figure3. DEVICEMARKINGINFORMATION
= Pin 1 designator
THS7700
THS7700012IRGE = device name
12IRGE
TI =TI LETTERS
YM =YEAR MONTH DATE CODE
TIYMS
LLLL S =ASSEMBLYSITE CODE
LLLL=ASSYLOTCODE
ABSOLUTE MAXIMUM RATINGS(1)
Overoperatingfree-airtemperaturerange,unlessotherwisenoted.
THS770012 UNIT
Powersupply(V toGND) 5.5 V
S+
Inputvoltagerange GroundtoV V
S+
Differentialinputvoltage,V GroundtoV V
ID S+
Continuousinputcurrent,I 10 mA
I
Continuousoutputcurrent,I 100 mA
O
Storagetemperaturerange,T –65°Cto+150°C °C
stg
Maximumjunctiontemperature,T +150 °C
J
Maximumjunctiontemperature,continuousoperation,longtermreliability +125 °C
Humanbodymodel(HBM) 2500 V
ESDratings Chargeddevicemodel(CDM) 1000 V
Machinemodel(MM) 100 V
(1) Stressesabovetheseratingsmaycausepermanentdamage.Exposuretoabsolutemaximumconditionsforextendedperiodsmay
degradedevicereliability.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyond
thosespecifiedisnotimplied.
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THERMAL INFORMATION
THS770012
THERMALMETRIC(1) UNITS
RGE(24)PINS
θ Junction-to-ambientthermalresistance 44.1
JA
θ Junction-to-case(top)thermalresistance 35
JC(top)
θ Junction-to-boardthermalresistance 19
JB
°C/W
ψ Junction-to-topcharacterizationparameter 0.5
JT
ψ Junction-to-boardcharacterizationparameter 18.8
JB
θ Junction-to-case(bottom)thermalresistance 8.9
JC(bottom)
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.
ELECTRICAL CHARACTERISTICS
TestconditionsareatT =+25°C,V =+5V,V =+2.5V,V =2V ,R =400Ωdifferential,G=+12dB,differentialinput
A S+ OCM OUT PP L
andoutput,andinputandoutputreferencedtomidsupply,unlessotherwisenoted.Measuredusingevaluationmoduleas
discussedinTestCircuitssection.
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
Gain=+10dB,VOUT=200mVPP 900 MHz C
Gain=+11dB,VOUT=200mVPP 810 MHz C
Small-signalbandwidth
Gain=+12dB,VOUT=200mVPP 680 MHz C
Gain=+13.7dB,VOUT=200mVPP 540 MHz C
Gain=+10dB,VOUT=2VPP 845 MHz C
Gain=+11dB,VOUT=2VPP 790 MHz C
Large-signalbandwidth
Gain=+12dB,VOUT=2VPP 680 MHz C
Gain=+13.7dB,VOUT=2VPP 548 MHz C
Bandwidthfor0.1dBflatness Gain=+12dB,VOUT=2VPP 130 MHz C
VOUT=2Vstep 3300 V/µs C
Slewrate
VOUT=4Vstep 3400 V/µs C
Risetime VOUT=2Vstep 0.6 ns C
Falltime VOUT=2Vstep 0.6 ns C
Settlingtimeto0.1% VOUT=2Vstep 2.2 ns C
Inputreturnloss,s11 Sees-Parameterssection,f<200MHz –18 dB C
Outputreturnloss,s22 Sees-Parameterssection,f<200MHz –16 dB C
Reverseisolation,s12 Sees-Parameterssection,f<200MHz –60 dB C
f=10MHz –90 dBc C
Second-orderharmonic f=50MHz –70 dBc C
distortion,Gain=+12dB,RL=
400Ω,VOUT=2VPP f=100MHz –73 dBc C
f=200MHz –74 dBc C
f=10MHz –100 dBc C
Third-orderharmonicdistortion, f=50MHz –85 dBc C
Gain=+12dB,RL=400Ω,VOUT
=2VPP f=100MHz –84 dBc C
f=200MHz –73 dBc C
f=50MHz,10MHzspacing –62 dBc C
Second-orderintermodulation f=100MHz,10MHzspacing –76 dBc C
distortion,Gain=+12dB,RL=
400Ω,VOUT=2VPP f=150MHz,10MHzspacing –78 dBc C
f=200MHz,10MHzspacing –78 dBc C
(1) Testlevels:(A)100%testedat+25°C.Over-temperaturelimitsbycharacterizationandsimulation.(B)Limitssetbycharacterizationand
simulation.(C)Typicalvalueonlyforinformation.
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ELECTRICAL CHARACTERISTICS (continued)
TestconditionsareatT =+25°C,V =+5V,V =+2.5V,V =2V ,R =400Ωdifferential,G=+12dB,differentialinput
A S+ OCM OUT PP L
andoutput,andinputandoutputreferencedtomidsupply,unlessotherwisenoted.Measuredusingevaluationmoduleas
discussedinTestCircuitssection.
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
f=50MHz,10MHzspacing –97 dBc C
Third-orderintermodulation f=100MHz,10MHzspacing –100 dBc C
distortion,Gain=+12dB,RL=
400Ω,VOUT=2VPP f=150MHz,10MHzspacing –92 dBc C
f=200MHz,10MHzspacing –81 dBc C
RL=20Ω 19.6 dBm C
1dBcompressionpoint f=100MHz
RL=400Ω 8.7 dBm C
Outputthird-orderintercept
point Atdeviceoutputs,RL=400Ω,f=100MHz 47 dBm C
Input-referredvoltagenoise f=1MHz 1.5 nV/√Hz C
Ouput-referredvoltagenoise f=1MHz 6 nV/√Hz C
f=50MHz 9.5 dB C
100Ωdifferential
Noisefigure f=100MHz 10.7 dB C
source
f=200MHz 12.3 dB C
Overdriverecovery Overdrive=±0.5V 5 7.5 ns B
Outputbalanceerror f=200MHz -60 dB C
Outputimpedance f=100MHz 4 Ω C
DCPERFORMANCE
TA=+25°C,RL=400Ω 11.65 11.9 12.15 dB A
TA=+25°C,RL=100Ω 11.4 11.6 11.85 dB B
Gain(+12dBgainsetting)
TA=–40°Cto+85°C,RL=400Ω 11.6 12.2 dB B
TA=–40°Cto+85°C,RL=100Ω 11.6 12.2 dB B
TA=+25°C –20 ±2 20 mV A
Outputoffset
TA=–40°Cto+85°C –22.5 22.5 mV B
TA=+25°C 36 60 dB A
Common-moderejectionratio
TA=–40°Cto+85°C 35 dB B
INPUT
Differentialinputresistance 85 100 115 Ω A
Inputcommon-moderange Inputsshortedtogether,VOCM=2.5V 2.25 2.75 V A
OUTPUT
Eachoutputwith TA=+25°C 3.64 3.7 V A
Mostpositiveoutputvoltage
200Ωtomidsupply TA=–40°Cto+85°C 3.59 V B
Eachoutputwith TA=+25°C 1.3 1.4 V A
Leastpositiveoutputvoltage
200Ωtomidsupply TA=–40°Cto+85°C 1.45 V B
Eachoutputwith TA=+25°C 3.59 3.6 V A
Mostpositiveoutputvoltage
50Ωtomidsupply TA=–40°Cto+85°C 3.54 V B
Eachoutputwith TA=+25°C 1.3 1.5 V A
Leastpositiveoutputvoltage
50Ωtomidsupply TA=–40°Cto+85°C 1.55 V B
TA=+25°C,RL=400Ω 4.4 4.8 VPP B
Differentialoutputvoltage
TA=–40°Cto+85°C,RL=400Ω 4.2 VPP B
TA=+25°C,RL=10Ω 80 mA B
Differentialoutputcurrentdrive
TA=–40°Cto+85°C,RL=10Ω 80 mA B
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ELECTRICAL CHARACTERISTICS (continued)
TestconditionsareatT =+25°C,V =+5V,V =+2.5V,V =2V ,R =400Ωdifferential,G=+12dB,differentialinput
A S+ OCM OUT PP L
andoutput,andinputandoutputreferencedtomidsupply,unlessotherwisenoted.Measuredusingevaluationmoduleas
discussedinTestCircuitssection.
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
OUTPUTCOMMON-MODEVOLTAGECONTROL
VOCMsmall-signalbandwidth VOUT_CM=200mVPP 300 MHz C
VOCMslewrate VOUT_CM=500mVstep 150 V/µs C
VOCMvoltagerange Suppliedbyexternalsource(2) 2.25 2.5 2.75 V C
VOCMgain VOCM=2.5V 0.98 1 1.02 V/V A
Outputcommon-modeoffset
fromVOCMinput VOCM=2.5V –30 ±12 30 mV A
VOCMinputbiascurrent 2.25V≤VOCM≤2.75V –400 ±30 400 µA A
POWERSUPPLY
Specifiedoperatingvoltage 4.75 5 5.25 V C
TA=+25°C 85 100 115 mA A
Quiescentcurrent
TA=–40°Cto+85°C 80 125 mA B
TA=+25°C,VS+=5V±0.25V 60 90 dB A
Power-supplyrejectionratio
TA=–40°Cto+85°C,VS+=5V±0.5V 59 dB B
POWER-DOWN
Enablevoltagethreshold Devicepowersonbelow0.5V 0.5 V A
Disablevoltagethreshold Devicepowersdownabove2.0V 2 V A
Power-downquiescentcurrent 0.8 3 mA A
Inputbiascurrent 80 100 µA A
Turn-ontimedelay TimetoVOUT=90%offinalvalue 10 µs C
Turn-offtimedelay TimetoVOUT=10%oforiginalvalue 0.15 µs C
THERMALCHARACTERISTICS
Specifiedoperatingrange –40 +85 °C C
Thermalresistance,θJC(3) Junctiontocase(bottom) 8.9 °C/W C
Thermalresistance,θJA(3) Junctiontoambient 44.1 °C/W C
(2) LimitssetbybestharmonicdistortionwithV =3V .V voltagerangecanbeextendedifloweroutputswingisusedordistortion
OUT PP OCM
degradationisallowed,andincreasedbiascurrentintopinisacceptable.Formoreinformation,seeFigure18andFigure34.
(3) TestedusingJEDECHigh-KtestPCB.Thermalmanagementofthefinalprintedcircuitboard(PCB)shouldkeepthejunction
temperaturebelow+125°Cforlongtermreliability.
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PIN CONFIGURATION
RGEPACKAGE
VQFN-24
(TOPVIEW)
NC VS+ VS+ VS+ VS+ NC
24 23 22 21 20 19
200Ω
NC 1 18 GS+
60Ω 140Ω
PD 2 17 Unused
50Ω 2Ω
VIN- 3 - + 16 VOUT+
V
OCM 2Ω
VIN+ 4 + - 15 VOUT-
50Ω
VOCM 5 60Ω 140Ω 14 Unused
200Ω
NC 6 13 GS-
7 8 9 10 11 12
C D D D D C
N N N N N N
G G G G
PINDESCRIPTIONS
PIN
DESCRIPTION
NO. NAME
1 NC Nointernalconnection
2 PD Powerdown.High=lowpower(sleep)mode.Low=active.
3 V Invertinginputpin
IN–
4 V Non-invertinginputpin
IN+
5 V Outputcommon-modevoltagecontrolinputpin
OCM
6,7 NC Nointernalconnection
8,9,10,11 GND Ground.Mustbeconnectedtothermalpad.
12 NC Nointernalconnection
13 GS- Gain-settingconnectionforinvertingoutput
14 Unused Bondedtodie,butnotused.TietoGND.
15 V Invertingoutputpin
OUT–
16 V Non-invertingoutputpin
OUT+
17 Unused Bondedtodie,butnotused.TietoGND.
18 GS+ Gain-settingconnectionfornon-invertingoutput
19 NC Nointernalconnection
20,21,22,
V Powersupplypins,+5Vnominal
23 S+
24 NC Nointernalconnection
Thermalpad ThermalpadonbottomofdeviceisusedforheatdissipationandmustbetiedtoGND
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TYPICAL CHARACTERISTICS
TABLEOFGRAPHS
TITLE FIGURE
200mV FrequencyResponseMagnitude Figure4
PP
200mV FrequencyResponsePhase Figure5
PP
2V FrequencyResponseMagnitude Figure6
PP
2V FrequencyResponsePhase Figure7
PP
3V FrequencyResponseMagnitude Figure8
PP
3V FrequencyResponsePhase Figure9
PP
Small-andLarge-SignalPulseResponse Figure10
SlewRatevsOutputVoltageStep Figure11
OverdriveRecovery Figure12
Single-EndedInputHarmonicDistortionvsFrequency Figure13
HarmonicDistortionvsFrequency Figure14
HarmonicDistortionvsOutputVoltage Figure15
HarmonicDistortionvsLoad Figure16
HarmonicDistortionvsGain Figure17
HarmonicDistortionvsOutputCommon-ModeVoltage Figure18
IntermodulationDistortionvsFrequency Figure19
OutputInterceptPointvsFrequency Figure20
MaximumDifferentialOutputVoltageSwingPeak-to-PeakvsDifferentialLoadResistance Figure21
Maximum/MinimumSingle-EndedOutputVoltagevsDifferentialLoadResistance Figure22
DifferentialOutputImpedancevsFrequency Figure23
FrequencyResponsevsCapacitiveLoad Figure24
RecommendedOutputResistancevsCapacitiveLoad Figure25
Common-ModeRejectionRatiovsFrequency Figure26
Power-SupplyRejectionRatiovsFrequency Figure27
Turn-OnTime Figure28
Turn-OffTime Figure29
InputandOutputVoltageNoisevsFrequency Figure30
OutputBalanceErrorvsFrequency Figure31
V Small-SignalFrequencyResponse Figure32
OCM
OutputCommon-ModePulseResponse Figure33
V InputBiasCurrentvsV InputVoltage Figure34
OCM OCM
s-Parameters(Magnitude) Figure35
NoiseFigurevsFrequency Figure36
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TYPICAL CHARACTERISTICS
AtT =+25°C,V =+5V,V =+2.5V,V =2V ,R =400Ωdifferential,G=+12dB,differentialinputandoutput,input
A S+ OCM OUT PP L
andoutputpinsreferencedtomidsupply,unlessotherwisenoted.MeasuredusingEVMasdiscussedinTestCircuitssection.
200mV FREQUENCYRESPONSEMAGNITUDE 200mV FREQUENCYRESPONSEPHASE
PP PP
3 45
VOUT= 200 mVPP VOUT= 200 mVPP
0
0
G = 11 dB
dB -3 G = 10 dB G = 11 dB
d Gain - -6 G = 13.7 dB se - deg-45 G = 13.7 dB G = 10 dB
e G = 12 dB a
aliz Ph-90 G = 12 dB
orm -9
N
-135
-12
-15 -180
10M 100M 1G 10G 10M 100M 1G
Frequency - Hz
Frequency - Hz
Figure4. Figure5.
2V FREQUENCYRESPONSEMAGNITUDE 2V FREQUENCYRESPONSEPHASE
PP PP
3 45
VOUT= 2 VPP VOUT= 2 VPP
0
0
G = 11 dB
B -3 G = 11 dB
d
ain - G = 10 dB deg -45
alized G -6 G = G13 =.7 1 d2B dB Phase - -90 G = 13.7 dB G = 10 dB
orm -9 G = 12 dB
N
-135
-12
-15 -180
10M 100M 1G 10G 10M 100M 1G
Frequency - Hz Frequency - Hz
Figure6. Figure7.
3V FREQUENCYRESPONSEMAGNITUDE 3V FREQUENCYRESPONSEPHASE
PP PP
3 45
VOUT= 3 VPP VOUT= 3 VPP
0
0
G = 11 dB
dB -3 G = 10 dB
alized Gain - -6 G = 13G.7 = d 1B2 dB Phase - deg --9405 G = 13.7 dB G = 11 dBG = 10 dB
m
or -9 G = 12 dB
N
-135
-12
-15 -180
10M 100M 1G 10G 10M 100M 1G
Frequency - Hz Frequency - Hz
Figure8. Figure9.
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TYPICAL CHARACTERISTICS (continued)
AtT =+25°C,V =+5V,V =+2.5V,V =2V ,R =400Ωdifferential,G=+12dB,differentialinputandoutput,input
A S+ OCM OUT PP L
andoutputpinsreferencedtomidsupply,unlessotherwisenoted.MeasuredusingEVMasdiscussedinTestCircuitssection.
SLEWRATE
SMALL-ANDLARGE-SIGNALPULSERESPONSE vsOUTPUTVOLTAGESTEP
3 4000
2
3000
V 1
-OUT V/sm
ntial V 0 Rate - 2000
Differe -1 Slew
1000
-2
-30 20 40 60 80 100 120 00 1 2 3 4 5
Time - ns Output Voltage - VPP
Figure10. Figure11.
SINGLE-ENDEDINPUT
OVERDRIVERECOVERY HARMONICDISTORTIONvsFREQUENCY
2 8 -60
HD2
VIN 6 -65 VOUT= 3 VPP
-70 VOUT= 2 VPP
1 4 Bc -75 VOUT= 1 VPP
d
Input Voltage - V 0 VOUT -022 Output Voltage - V monic Distortion - ----99885050 HD3
-1 -4 Har-100 VOUT= 3 VPP
VOUT= 2 VPP
-6 -105 VOUT= 1 VPP
-110
-2 -8 -115
0 50 100 150 200 10M 100M 1G
Times - ns Frequency - Hz
Figure12. Figure13.
HARMONICDISTORTION HARMONICDISTORTION
vsFREQUENCY vsOUTPUTVOLTAGE
-60 -65
-65 HD2 f = 100 MHz,
VOUT= 3 VPP -70 RL= 400W HD2
-70 VOUT= 2 VPP
Harmonic Distortion - dBc-1-----099887050505 VOUT= 1 VPP HVODU3T= 3 VPP Harmonic Distortion - dBc ----98870505 HD3
-105 VOUT= 2 VPP
VOUT= 1 VPP -95
-110
-115 -100
10M 100M 1G 0 1 2 3 4 5
Frequency - Hz VOUT- Output Voltage - V
Figure14. Figure15.
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TYPICAL CHARACTERISTICS (continued)
AtT =+25°C,V =+5V,V =+2.5V,V =2V ,R =400Ωdifferential,G=+12dB,differentialinputandoutput,input
A S+ OCM OUT PP L
andoutputpinsreferencedtomidsupply,unlessotherwisenoted.MeasuredusingEVMasdiscussedinTestCircuitssection.
HARMONICDISTORTION HARMONICDISTORTION
vsLOAD vsGAIN
-65 -50
f = 100 MHz, VOUT= 2 VPP,
VOUT= 2 VPP RL= 400W
-70 -60
c
B
nic Distortion - dBc --8705 HD2 monic Distortion - d --8700 HHDD23
armo HD3 Har
H -85 -90
-90 -100
0 200 400 600 800 1K 9 10 11 12 13 14
Gain - dB
RL- Load -W
Figure16. Figure17.
HARMONICDISTORTION INTERMODULATIONDISTORTION
vsOUTPUTCOMMON-MODEVOLTAGE vsFREQUENCY
-20 -60
f = 100 MHz IMD2
-30 -65 VOUT= 3 VPPEnvelope,
-40 VOUT=H D3 2VPP Bc -70 VVOOUUTT== 21 VVPPPPEEnnvveellooppee,
on - dBc-50 VOUT=H D3 3VPP ortion - d --8705
monic Distorti---876000 odulation Dist --9805 IVVVMOOODUUU3TTT=== 321 VVVPPPPPPEEEnnnvvveeelllooopppeee,,
Har-90 VOUT= 2 VPP nterm-1-0905
HD2 I
-100 VOUTH= D23 VPP -105
-110 -110
1.75 2 2.25 2.5 2.75 3 3.25 50 70 90 110 130 150 170 190
VOCM- Output Common-Mode Voltage - V Frequency - MHz
Figure18. Figure19.
OUTPUTINTERCEPTPOINT MAXIMUMDIFFERENTIALOUTPUTVOLTAGESWING
vsFREQUENCY PEAK-TO-PEAKvsDIFFERENTIALLOADRESISTANCE
90 5.5
80 OIP2 5.0
m 70 4.5 Maximum
B Differential
d V
ut Intercept Point - 34560000 OIP3 Differential V- OUT 4332....0505 VOUT_PP
Outp 20 2.0
RL= 400W, 1.5
10 VOUT= 3 VPPEnvelope
1.0
0 10 100 1k
50 70 90 F1r1e0quenc1y3 -0 MHz 150 170 190 Load Resistance -W
Figure20. Figure21.
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