ARPA-E Initiatives in High Efficiency Power Conversion

37 Pages·2016·4.11 MB·English

ARPA-E Initiatives in High Efficiency
Power Conversion
Tim Heidel
Program Director
Advanced Research Projects Agency – Energy (ARPA-E)
U.S. Department of Energy

APEC Plenary Session
Ft. Worth, TX, March 14, 2014
ARPA-E Mission
1
The ARPA-E Approach
Transformational & disruptive technologies that lead to new
learning curves.
transformational
Steam-powered Cugnot (1769)

e
c
Benz Motorwagen (1885)
n
a
m transformational & disruptive
r
o
f
r
e existing learning curve
p

/
tipping
t
s
o point
c new learning curve
Ford Model T
(1914)
time
2
Focused Programs
Solar
BEEST ADEPT
BEETIT
PETRO
GRIDS
Transportation Stationary
Energy Energy
Electrofuels
Technologies Technologies
IMPACCT
MOVE
ADEPT
RANGE
GENI
HEATS AMPED REACT SBIR/STTR METALS SWITCHES
REMOTE FOCUS
3
Electricity is ~40% of U.S. Energy Consumption
U.S. Primary Energy U.S. Retail Sales of Electricity to
Consumption 2011 Ultimate Customers 2011
Sector
Transportation
7,672
(<1%)
Industrial
991,316
(27%)
Commercial
1,328,057
(35%)
• In 2005, 30% of electricity
in the U.S. flows through
power converters.

Residential
1,422,801
• By 2030, 80% of electricity
(38%)
could flow through power
converters.
Quadrillion Btu Million kWh
U.S. Energy Information Administration (EIA), Retail sales of electricity to ultimate customers, January 30, 2013.
EIA, Annual Energy Review DOE/EIA-0384(2011), September 2012 4
L.M. Tolbert, et al., “Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications: Assessing the Technical
Needs for Utility Applications.“ (Oak Ridge, TN: Oak Ridge National Laboratory, 2005)
Power Conversion is Ubiquitous
• Universal Goals:

• High Power Density

Tradeoffs often required
• Low Cost
between these objectives.

• High Efficiency
5
High Power Density, Low Cost, High Efficiency
Requires New Magnetic Components
Magnetic components are often the largest,
most expensive parts in converters
1MW PV
Inverter
40% Magnetics (by vol.)
LED Driver
Higher frequencies reduce the amount of
material (lower cost) but reduces efficiency.
30-50% Magnetics (by vol.)
Alex Leary, Paul Ohodnick, Michael McHenry, Soft Magnetic Materials in High-Frequency, High-Power Conversion Applications, 2012.
6
High Frequency Difficult at High Voltages/Powers
1200 V Silicon IGBTs Switching Performance
7
High Power, High Frequency Requires New Switches
Semiconductor bandgap increases

Crtiical electric field increases

Drift region thickness can be
decreased
• Reduced carrier transit time

• Increased frequency
New device technologies needed for

high power, high frequency power
• Reduced on-resistance
conversion.
Michael A. Briere, GaN based Power Devices, RPI CFES Conference, International Rectifier, January 2013.
8
Jong-Mun Park, Evolution of Power Semiconductor Devices, October 2004.
G. Miller: Future Trends in High Power Semiconductors, ECPE workshop, March 5th-6th, 2009.
Semiconductor Materials Properties
Conventional Wide band-gap
GaN GaN
Si GaAs 4H-SiC Diamond
(2 DEG) (Bulk)
Band Gap Eg (eV) 1.1 1.42 3.26 3.39 3.39 5.45
Electron n
i 1.5×1010 1.5×106 8.2×10-9 1.9×10-10 1.9×10-10 1.6×10-27
Concentration (cm^-3)
Electron Mobility μn
1350 8500 700 1000 500 1900
(low) (cm^2/V s)
Electron Mobility μn
1450 8500 950 2000 1200 4000
(high) (cm^2/V s)
Electron v
sat 1 2 2 2.5 2.5 2.7
Saturation Velocity (10^7cm/s)
Breakdown E
br 0.3 0.4 3 3.3 3.3 5.6
Electric Field (MV/cm)
Thermal Θ
1.5 0.43 4.9 1.3 2.3 20
Conductivity (W/cm K)
Maximal Operation
T (°C) 125 150 500 650 650 700
Temperature max
FOM =
Figure of Merit (Ebr * 1 2.7 20 27.5 27.5 50
vsat)/2π
Umesh K. Mishra, Likun Shen, Thomas E. Kazior, Yi-Feng Wu, GaN-Based RF Power Devices and Amplifiers, IEEE, February 2008. 9
Frederic Morancho, State of the art and trends in power semiconductor devices for optimized power management, LAAS-CNRS, October 2008.