Analog Integrated Circuit Design

714 Pages·1997·22.21 MB·English

by  David Johns

ANALOG INTEGRATED
CIRCUIT DESIGN

DAVID A. JOHNS
KEN MARTIN
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Contents

CHAPTER 1 WNTEGRATED-CIRCUIT DEVICES AND MODELUNG-

1. Seinigemsiersand pn Jutions 1
12 MOS Teristors 4

15 arkanced MOS Medeling —°4

VA Bipolar Jonorian Kransivies 4?
LS Device Movil Summary 36

Th SPICE Modoling Paeancrens 6)
Li Appendix 65

A References 7

3 18

CHAPTER2 PROCESSING AND LAYOUT :
LL CMOS Procesing 82
22 Hipusn Processing 95
53° CMOS Tayou sid Nesign Rules
Pa Analog Lagoa! Considraens 105
25 Laghtle 18

Be Reseemes 121
Piven 120

CHAPTERS BASIC CURRENT MIRRORS AND SINGLE-STAGE AMPLIFIERS

Li SiopleCMOS Cocua Minar 125
32 Common Swwrss Arapliier 125

3 Seuns-Follewer ue Commun Dssin Amplifier 129
S4 Comments Arplibear 132

35. Sunes Repenerated Craven Mineo 135

3.6 FighCutpuImpedance Coen! Miners 137

23 Caicole Gain Stoge 14D

33 MOS Ditiseena Pir and Gann St
39. BipulieCumoneMieure $46
B.D ipolae Gata Stages

a

105,
RAL ragaincy Responee 1S
32 SPICE Simelicioe Csemmles 169
BIT Tefen 16
14 Probiems 17h

ACHAFTIER.A NOISE ANALYSIS AND MODELUNG 181

‘Tine-Devtin Analesis 18
Bia sencyvnnin Agen T86

Noise Models toe Circuit Flees 196
Noise Auclysis Cocaples 204
References 215

Probes 211

CHAPTER 5 BASIC OPAME DESIGN AND COMPENSATION a

BA ‘Teusage (MOS Opmup 222
5.2 Peedback and Opamp Compenst
53. SPICL Somulaon Ls

52 Relroney 25
55 Problems 2

CHAPTER 6 ADVANCED CURRENT MIRRORS AND OPAMPS 258
83 Adesmisd Cure Miron 256
> Fratal helecpany 65
83 Cumestirocogsnp 273
Ln Selling Vine Resse 28

ao
Gamein-Feedback Oparaps 291
SPICE Shulicioe Examples 298
Retsoncce 249
Problems 50
Y CHAFTER7 COMPARATORS 304

Using an Opp tora Comperaor 208
Charge lajgrion Fens 28

Latched Compuratars 317

Caaciples of CMOS aod ICMAOS Comptes
Examples cf Bipour Compscator, 38
Refer 80

Problens 31
i Connie

CHAPTERS

CHAPTER?

CHAPTER 10

CHAPTER 11

SAMPLE AND HOLDS, VOLTAGE REFERENCES,
AND TRANSUINEAR GRCUITS,

8.1 Fecixmance of Supe sn-Hold Cinuits 334
82 MOS Sample awl-Hola Hanes 336

83 Examples CMOS SANCirouies 3d

R4 Bipolarand KACMOS Sample aus Holds 348

83 Bandgap Westage Reference Basics 352
a7

48 Cini for Bandgap Re
S17 Tranehmear Gin Cell
KA Teanstineur Mier
89 Relenwr, —348
KO moms 310

DISCRETE-TIME SIGNALS

3.1 Oveniew of Some Sota Sprtia
82 apace Uransoem oF Discrete-Time Sipnats 7
92 ztunsfonm 277

‘44 Soensampling ans Tpsamping 379

95. Dierete-tine Fiters 382

88 Sumpleid-Hokl Respowse 8B

97 References 381

VA Probleme 31 :

SWITCHED-CAPACITOR CIRCUTS

$0.1 Basie Talding Blocks 394
102, asic Opersson and Anutysis 398

13 PiesOrder Fite 408

104 RiquadFiters 45

TLS Chacge Injection 25,

LOS Soitehed-CapeivarGainCinails 427
107 Comat Ponbe-Sampling Techniques 433
108 Oiler Svitened-Cipuitor Cons 434
109 Roferensss 417

HLID Problems 492

DATA CONVERTER FUNDAMENTALS
TLL Ade BIA Converter 5
112 Ideal AD Canceset 447
113 Quinlicwion Nowe 448
TLS Signed Cndes 482

a3

304

5
Gonmate

115) Perlarmwace Liaaiaions 454
1156 Refennces abl
U7 Problems 461

CHAPTER 12 NYQUIST:RATE D/A CONVERTERS. 463

12.1 DocederBaied Converters 463
122 Ionuey Sealed Cowvesten 468
123 Thomometer-Cade Converers ATS
124 Hybrid Comeners 8

12S Reternonn

LS robes ae

(CHAPTER 13. NYQUIST-RATE A/D CONVERTERS 47

TAL Integrating Converters 487
132 Snecencive Appinsimation Converts, 492
1X3 Algor vr Cyolc) AMD Cunserter 504
[84 FlihiGorPrlled) Convoners 57

13S Twosp AD Comeness 518

136 Inlecpolaing AD Convenes 516

17 Belding AM Convener 519

TNE Plpeliied AD Consentes 523,
TA9.Tim-lvleaved AD Conventrs "526

IE) Refers 527
WRAL Problems 528
CHAPTER 14 OVERSAMPLING CONVERTERS. 531

14.4 Oveesanpling without Noise Shaping 541
182 Overropling wily Noise Shepiog 538
143 System Aehitceres S47

V2 Digital Decimation Fiters $51

443 IligberOnler Moduluors 555

12h Bandpast Oversampling Converters 557
127 Practical Cormeratone $59

12H Miu-Ric Ovorsampling Canverter
129 Thi Onder AD Design Example
W410 Refersnses STL

1411 Probiews 372

CHAPTER 15. CONTINUQUS-TIME FILTERS 7a

15.1 Aneoduction 9 Ga Plers 575,
152 RipalirTeamceondacts SR
x Cone

oj CHAPTER 16

INDEX

EMS Transeonductors Using Trade Tramsors
EMOS Trunteondvetore Ung Active Traitors
BECMOS teutsconunctnes Al
MOSIEECEIINe 620

IS? Thoin Cicuioy 626

IS Dynan

139 Referens 643
150 Proskms 4s

was

PHASE-LOCKED LOOPS

161 Basic Loop Acchitesiee 68
12 PLLs with Ghurge-Panp Mase Comparuiors 65
161 VologeContelld Osis 670,

id Compu: Simulation af Ps is
16.5 Appontis 689

166 Referees 2

67 Problems 69)

507
we

a8

696
CHAPTER
1 Integrated-Circuit
Devices and Modelling

Ii tas chap, the apertion and mvadting ef semivonducte deca ade oe
Alteugh i posible to do simple impresses wih a bose knowledge
fof rericundetor dcvice minding, for Nihenoed tde-oPshieur deni, an i
sept undzrstaniag af he occadt-onder elects of device operon amd their model-
Ling consider crit

eis aseurned tht mast seadets have bec :uulwcel i ast aad hie asia
nude in poesine cess. Ths. fundamen semisonduccer concepts ure only
Twiewy reviews. Seetim 1.1 deserves pn juactions 107 digdes). Thi section
Amposan! in vrvleraanding the parse capasianees in many device models, sch a+
jmeinn capacitances. Sectim [2 cavers MOS Tunssture a woaklRng, Te shld be
rowed thet this sec celles ho sone degree tho matvialpresinusly resented in
Seatiyn -1, in which devin eapacitanes ws covered. Sectun 1.4 coves bipolar
junction tamistos and medelling, A sotamaty ef device model and impacan: wp
Tins presen in Ssetnn 1.3. This sumisry i ycticoanly wel ev zeader cho
already has 4 goo background in isiniapr tating, in which sae Uke sure
cae sed eo fallow che notannn used trouetous Ibe reminder uf Ihe book.
fd, amet deserptom i ven ofthe most important procss-related parame
tse it SPICT: rualing, Final, this chapter coachudes witha Appenatx enti
Sng derivations ofthe rune pysicly ba elec cris.

1.1 SEMICONDUCTORS AND pn JUNCTIONS:

A semigonduetor i erst lice siwrtue tk can hae fre elecrone (hich are
regia carer) atu fe Des (ichare an ahsones of cles end are equ
Teot ro poritivecanieres The ‘ype of semizonducterIepvilly voll siliaon foam
sooy celled sor, This ae We vlenae af Fo, plying that each wom hos
torr eleceonstoshare wah neighboring noms when frie the sovalnthonds
ihe oxytal lative tre eon ch, andoped eicom s a ec pure erst steele
Taving ages number of te slecioneundbles, Thesefivecarers aretha loc one
dorhufesthat have gana ough ere de tuna station escape thirds
‘Aton temperate thee are agprogitay 15 7 10! samers ofeach yp per
‘ocoquivalelly 1.3 10 cannesin® the manber of car es apprenimately Coubes
Fr avey 11% inerents Ww tersperatre,
2 Chopar 1+ Images Creal Deveer ove otal og

Foe ope silicun wih a pentavaleatumpurty ia, syns ofan elemenc having
sa valence of five. © equislenly five lectins mn the oner shel, seatlale when
hovdng ith neighboring stems, tre wll be dans oe ature eketton for
every impurity stn, These fee eletans 2a eid Ww oad caren. A pease
Tent inp i suid donate fee elton to che ie ry and ths the ime
rity kn a6 cbmc Examples wf donee lenis ae phoepins,P, an anseic,
AAS, These impurties ate alo cael "ype dapat sinc tne Hee cain, suing
fh tiv use have negative cherge. Whe a Type impute ote held me
era aegacve caries wr elecnons a altar the hi ve the doping concent,
and is meh preter dem Gk sumer of eee elecian® in nie scum, In caer.
wort,

= Np au
where

dons te fscslectron apscentation in M-iypemiseria wd Np 1s the
oping concentration twill te sutseript D denaing, ds Ou tbe other Wad, che
nn Cee bles an ropa tii be src Tee tha the saber ot holes
in movie cur and ean be shown "Sze, TOSI 3 be given by

cs
Jets n ithe saser serena in rine icon,
Sinilady. {Cone pes icon wit soma busing a valence of thie fur example

boron (i, the nncration Uf penive camisoles wil be approximately oa
tw the eergpeor concentration, Ne.

be Ne as
odie nator sin caries nt Ap n,n. is Ney
eel 1
E ¢

EXAMPLE 1

Iutrnse ifeun a6 doped wih bono concentration of 16" stout. At
root empeatre, svat are the soncentatene of ules elton inh
resuling ped scan? Assume thal ny = 1.510" savior

eycatating, ty, ll appre qual dp eoncemtaion (0,
0° Golesi. Te cle someon isan from tr be
11 Sericonduts ond pt enctions 9

_ (sx?

Ww

10" electronsin? as)

Such doped silicon i refered to asp rype since it has many more free holes
than fee elections

Diodes

To rie diode, or. equivlely, «ph junction, one pant of semiconductor is
doesn fap and lsh anc pts ape pe 8 shown in FU. Tete
theo, or jmction formed ete tbe rein an the gin. shouldbe
Sota ta he sper nde the eae deg Teel. For xa the P
bul region might have an impurity concentration of 5 10" carer, wets the
Band regions woul! be duped nore hes 0» velue aod 10° to 10" ea
Erste hr the etal om othe idem ths ee. alumna te
once ahs ape pions poset Tih Bet resin arise 9
Scot dade would ocar.(Schosky diodes ae dscsse on page 13) Tas it
or no to mae a Shot dole the conse wo the meg sacl sae
athe region

Ihe sea large mmbe of fe postive carer re val wees in
thenside any fe negative care af avallaNe The olen the side wil end
toalsgese on difise oe msde, wheres thee clectuns in he side wil tend
todtuse to the p sie. Ths process sey simi vn ass randomly ain,
topeher. Tiss lovers the concentration of ree caer the ean betweck
the to sides, As he evo pe of eras dase tgs, they recone. very
ele ta dfs frm hen sie to the sie eaves behind bund postive
hos eles tothe ns ‘con, Sil, every hl tht ies fry the
Sie eaves bind a bound leconaearthe wanton region. The end eas show
In Fig. 2. This elfen of te eins coer drpltion man a the nein of
thet ies whet o ee cares ei ad Which has a net negative charge a he
BF sian a at psec the Mat The sn of expe

rode Cathode
S10, °

‘node

cathode

pnyvreion ¢ Bulk

Fig. 1 Across con ofa pn diode