Table Of ContentThin Solid Films 369 (2000) 436-437
www.elsevier.com/locate/tsf
Author Index of Volume 369
Abstreiter, G., 39, 398 Eisele, 1., 10, 60, 383, 387 Hata, T., 171 Katayama, M., 25
Ahmed, A., 324 Ellmer, H., 426 Hatakeyama, T., 328 Kawaguchi, K., 126, 130, 423
Akazawa, H., 157 Emoto, T., 281 Hattori, T., 84 Kawamura, T., 5
Akimoto, K., 281 Enomoto, Y., 21 Hayami, R., 352 Keisuke, M., 134
Andreev, B.A., 426 Ensslin, K., 390 Heinemann, B., 189, 342, 347 Kibbel, H., 175
Anil, K.G., 383 Ernst, E., 33 Henry, M.O., 79 Kienzle, O., 33, 39
Aoki, T., 222 Ernst, F., 39, 152 Herzog, H.-J., 148, 152, 175 Kim, H.-S., 185
Ezoe, K., 244 Hibino, H., 5 Kim, J.Y., 96
Hideaki, M., 134 Kim, K.-S., 207
Asano, T., 161 Fan, Y., 92 Hiraki, A., 143 Kishimoto, Y., 423
Asaoka, H., 273 Ferrari, C., 431 Hirose, F., 230 Kitabatake, M., 257
Fink, C., 10, 383, 387 Hirose, M., 55 Klose, M., 175
Bauer, G., 394, 409 Fischer, G.G., 347 Hirose, Y., 167 Knoll, D., 189, 342, 347
Bauer, M., 138, 152 Fitzgerald, E.A., 148 Hock, G., 148 Kobayashi, S., 222
Baumgartner, H., 10 Fujino, T., 25 Hoster, H.E., 10 Kobayashi, Y., 112
Borca-Tasciuc, T., 121 Fujiu, M., 167 Hu, C.-W., 265 Koga, T., 248
Boscherini, F., 29 Fukatsu, S., 213, 402, 423 Hu, D., 92 Koike, M., 199
Boucaud, P., 43 Fukuda, Y., 130 Koji, Y., 134
Bouchier, D., 43 Fuse, T., 25 Ichikawa, A., 167, 281 Kojima, H., 226
Bright, A., 248 Futatsugi, T., 217 Thm, S.H., 96 Koma, A., 273
Brunner, K., 39, 398, 402 Ihn, T., 390 Kondo, M., 352
Buchal, C., 398 Geiger, H., 383 Ikeda, H., 116, 277, 293 Koshikawa, T., 100
Bulsara, M., 148 Gennser, U., 390 Ikeda, M., 55 Kosugi, M., 69
Gentchey, I., 10 Ikeda, T., 167 Koyanagi, M., 207
Capellini, G., 29 Glasper, J.L., 375 Inudzuka, K., 25 Krasil’ nik, Z.F., 426
Chabert, S., 431 Glutsch, S., 394 Irisawa, T., 203, 320 Kuan, C.H., 182
Chen, C.C., 182 Gong, D., 92 Ishida, M., 134 Kubo, M., 143
Chen, G., 121 Goorsky, M.S., 121 Ishii, K., 244 Kumezawa, M., 69
Chea, L.P., 371 Gorgens, L., 10 Ishikawa, Y., 213, 281, 69 Kuramochi, H., 73
Cheng, H.H., 79, 182 Goto, K., 25, 379 Ro, T.,: 142 Kurata, H., 217
Cherepanov, V.A., 79 Griitzmacher, D., 390 Itoh, K.M., 405 Kurino, H., 207
Chia, C.-T., 79, 182 Graf, M., 175 Kurobe, A., 199, 328, 33
Christiansen, S.H., 431 Grasby, T., 138 Jantsch, W., 312, 426 Kuwabara, H., 248
Churchill, A.C., 316, 324, 375 Grenzer, J., 409 Jiang, W., 92 Kuznetsov, V.P., 426
Griffin, N., 316 Jiang, Z., 92, 419
Daniel, A., 409 Guo, X.J., 182 Jiang, Z.-M., 65 Le Thanh, V., 43
de Boer, W.B., 431 Jin, G., 49 Lee, C.H., 96
Dehlinger, G., 390 Hackbarth, T., 148 Jinn Chang, S., 371 Lee, H.J., 96
Dollinger, G., 10 Haller, E.E., 405 Joyce, B., 104 Lee, J.-Y., 185
Du, C.-X., 414 Hamamoto, Y., 55 Jung, Y.-C., 134 Lew, Y.H., 96
Dudek, V., 175 Hane, K., 207 Leong, W.Y., 316, 375
Dunford, R.B., 316, 324 Hansch, W., 10, 60, 383, 387 Kajiyama, K., 100 Li, B., 419
Duschl, R., 33 Hansson, G.V., 414 Kamioka, H., 130 Li, G., 419
Duteil, F., 414 Harima, H., 100 Kang, J.-Y., 185 ka, ¥.; 92
Hartmann, J.M., 104 Kasper, E., 138, 152 Liu, E., 419
Eberl, K., 33, 402 Hasegawa, F., 253 Kasukabe, Y., 265 Liu, J.L., 121, 49
Ehwald, K.-E., 342 Hasegawa, M., 240 Kasuya, A., 265 Lu, F., 65
PII: $0040-6090(00)00992-5
Thin Solid Films 369 (2000) 436-437
www.elsevier.com/locate/tsf
Author Index of Volume 369
Abstreiter, G., 39, 398 Eisele, 1., 10, 60, 383, 387 Hata, T., 171 Katayama, M., 25
Ahmed, A., 324 Ellmer, H., 426 Hatakeyama, T., 328 Kawaguchi, K., 126, 130, 423
Akazawa, H., 157 Emoto, T., 281 Hattori, T., 84 Kawamura, T., 5
Akimoto, K., 281 Enomoto, Y., 21 Hayami, R., 352 Keisuke, M., 134
Andreev, B.A., 426 Ensslin, K., 390 Heinemann, B., 189, 342, 347 Kibbel, H., 175
Anil, K.G., 383 Ernst, E., 33 Henry, M.O., 79 Kienzle, O., 33, 39
Aoki, T., 222 Ernst, F., 39, 152 Herzog, H.-J., 148, 152, 175 Kim, H.-S., 185
Ezoe, K., 244 Hibino, H., 5 Kim, J.Y., 96
Hideaki, M., 134 Kim, K.-S., 207
Asano, T., 161 Fan, Y., 92 Hiraki, A., 143 Kishimoto, Y., 423
Asaoka, H., 273 Ferrari, C., 431 Hirose, F., 230 Kitabatake, M., 257
Fink, C., 10, 383, 387 Hirose, M., 55 Klose, M., 175
Bauer, G., 394, 409 Fischer, G.G., 347 Hirose, Y., 167 Knoll, D., 189, 342, 347
Bauer, M., 138, 152 Fitzgerald, E.A., 148 Hock, G., 148 Kobayashi, S., 222
Baumgartner, H., 10 Fujino, T., 25 Hoster, H.E., 10 Kobayashi, Y., 112
Borca-Tasciuc, T., 121 Fujiu, M., 167 Hu, C.-W., 265 Koga, T., 248
Boscherini, F., 29 Fukatsu, S., 213, 402, 423 Hu, D., 92 Koike, M., 199
Boucaud, P., 43 Fukuda, Y., 130 Koji, Y., 134
Bouchier, D., 43 Fuse, T., 25 Ichikawa, A., 167, 281 Kojima, H., 226
Bright, A., 248 Futatsugi, T., 217 Thm, S.H., 96 Koma, A., 273
Brunner, K., 39, 398, 402 Ihn, T., 390 Kondo, M., 352
Buchal, C., 398 Geiger, H., 383 Ikeda, H., 116, 277, 293 Koshikawa, T., 100
Bulsara, M., 148 Gennser, U., 390 Ikeda, M., 55 Kosugi, M., 69
Gentchey, I., 10 Ikeda, T., 167 Koyanagi, M., 207
Capellini, G., 29 Glasper, J.L., 375 Inudzuka, K., 25 Krasil’ nik, Z.F., 426
Chabert, S., 431 Glutsch, S., 394 Irisawa, T., 203, 320 Kuan, C.H., 182
Chen, C.C., 182 Gong, D., 92 Ishida, M., 134 Kubo, M., 143
Chen, G., 121 Goorsky, M.S., 121 Ishii, K., 244 Kumezawa, M., 69
Chea, L.P., 371 Gorgens, L., 10 Ishikawa, Y., 213, 281, 69 Kuramochi, H., 73
Cheng, H.H., 79, 182 Goto, K., 25, 379 Ro, T.,: 142 Kurata, H., 217
Cherepanov, V.A., 79 Griitzmacher, D., 390 Itoh, K.M., 405 Kurino, H., 207
Chia, C.-T., 79, 182 Graf, M., 175 Kurobe, A., 199, 328, 33
Christiansen, S.H., 431 Grasby, T., 138 Jantsch, W., 312, 426 Kuwabara, H., 248
Churchill, A.C., 316, 324, 375 Grenzer, J., 409 Jiang, W., 92 Kuznetsov, V.P., 426
Griffin, N., 316 Jiang, Z., 92, 419
Daniel, A., 409 Guo, X.J., 182 Jiang, Z.-M., 65 Le Thanh, V., 43
de Boer, W.B., 431 Jin, G., 49 Lee, C.H., 96
Dehlinger, G., 390 Hackbarth, T., 148 Jinn Chang, S., 371 Lee, H.J., 96
Dollinger, G., 10 Haller, E.E., 405 Joyce, B., 104 Lee, J.-Y., 185
Du, C.-X., 414 Hamamoto, Y., 55 Jung, Y.-C., 134 Lew, Y.H., 96
Dudek, V., 175 Hane, K., 207 Leong, W.Y., 316, 375
Dunford, R.B., 316, 324 Hansch, W., 10, 60, 383, 387 Kajiyama, K., 100 Li, B., 419
Duschl, R., 33 Hansson, G.V., 414 Kamioka, H., 130 Li, G., 419
Duteil, F., 414 Harima, H., 100 Kang, J.-Y., 185 ka, ¥.; 92
Hartmann, J.M., 104 Kasper, E., 138, 152 Liu, E., 419
Eberl, K., 33, 402 Hasegawa, F., 253 Kasukabe, Y., 265 Liu, J.L., 121, 49
Ehwald, K.-E., 342 Hasegawa, M., 240 Kasuya, A., 265 Lu, F., 65
PII: $0040-6090(00)00992-5
Author index
Luo, Y.H., 49 Oda, K., 352, 358 Sgarlata, A., 29 Tsuchiya, T., 69, 379
Lyutovich, K., 152 Oehme, M., 138, 152 Shengurov, V.G., 426 Tung, R.T., 233
Ogino, T., 5, 88, 112, 289 Shi, B., 92
Madhavi, S., 333 Ohfuti, M., 217 Shibata, N., 213 Uchida, H., 73
Maeda, F., 289 Ohhata, K.i., 352 Shim, K.-H., 185 Ueba, H., 161
Maeda, T., 240 Ohmi, S., 233 Shimada, K., 248
Uedono, A., 320
Markmann, M., 398 Ohue, E., 352, 358 Shimamoto, H., 352, 358
Ueno, T., 203, 320
Markov, V.A., 79, 182 Okada, M., 116, 130 Shinohara, M., 16
Usami, N., 84, 108, 126, 405
Maruizumi, T., 285 Omi, H., 88 Shiraishi, K., 112
Ushio, J., 285
Mase, M., 73 Osten, H.J., 342, 347 Shiraki, Y., xv, 84, 104, 108,
Masuda, T., 352 Oura, K., 25 126, 203, 320, 405
Matada, H., 161 Shmagin, V.B., 426 Venkataraman, V., 333
Matsumoto, S., 244 Palmetshofer, L., 426 Sidiki, T., 431 von Kanel, H., 148
Matsuo, H., 130 Paniago, R., 10 Song, M.K., 185
Matsushita, D., 293 Park, K.-T., 207 Song, Y.-H., 207 Wan, J., 419
Matsuura, T., 167, 207, 222, Park, S.-K., 195, 362 Sotomayor Torres, C.M., 431 Wang, K.L., 49, 121
379 Parker, E.H.C., 297 Springholz, G., 1 Wang, X., 65, 92, 419
McGlynn, E., 79 Paul, D.J., 316, 324 Stangl, J., 409 Washio, K., 352, 358
Metzger, T.H., 10 Pchelyakov, O.P., 79 Stepikhova, M.V., 426 Watanabe, S., 73
Mikoshiba, N., 222 Peng, Y.H., 182 Stimpel, T., 10 Watanabe, Y., 289
Miura, H., 134 Penn, C., 394, 409 Strunk, H.P., 431
Whall, T.E., 297
Miura, M., 84, 104 Pepper, M., 316, 324 Sturm, J.C., 366
Wilamowski, Z., 312
Miyao, M., 203, 226, 362 Pidduck, A.J., 324 Su; C.Y¥:,. 371
Williams, G.M., 375
Miyashita, H., 171 Pietsch, U., 409 Suemasu, T., 253
Wohl, G., 175
Miyazaki, S., 55 Pozina, G., 414 Suemitsu, M., 269
Wu, S.L., 371
Mizoguchi, K., 405 Prabhakaran, K., 289 Sugawara, Y., 402
Mizuno, T., 199 Sugii, N., 195, 226, 362
Moore, C.D., 121 Rau, Y., 33 Sugiyama, N., 199, 328, 338 Yam, V., 43
Morita, K., 405 Robbins, D.J., 316, 324, 375 Suh, E.-K., 96 Yamaguchi, S., 195, 203, 22
Moriya, A., 167 Roch, T., 409 Sulima, T., 10, 383 362
Motta, N., 29 Rosei, F., 29 Sumitomo, K., 112 Yamamoto, H., 273
Miihlberger, M., 306 Rosenblad, C., 148 Suto, S., 265 Yamamoto, M., 100
Miiller, E., 390 Ryu, J.-T., 25 Suzuki, T., 248 Yamamoto, T., 244
Murota, J., 167, 222, 379 Suzumura, I., 116 Yamazaki, Y., 25
Muto, A., 116 Saiki, K., 273 Svetlov, S.P., 426 Yang, M., 366
Muto, J., 405 Saitoh, T., 143 Yasuda, Y., xv, 116, 130, 277,
Sakai, A., 116, 293 Tabe, M., 69 293
Nabetani, Y., 171 Sakamoto, K., 240 Takagi, S., 199 Yasue, T., 100
Nagaki, M., 143 Sakuraba, M., 167, 222, 379 Takagi, S.-I., 338 Yokoo, K., 16
Nakagawa, K., 195, 203, 226, Sandersfeld, N., 306, 312 Takahumi, M., 134 Yoshida, E., 55
362 Sasaki, K., 171 Takakura, K., 253
Yoshimoto, M., 134
Nakagawa, Y., 277 Sato, F., 265 Takamiya, H., 84
Nakano, T., 25 Sato, K., 277 Takatsuka, T., 167
Zaima, S., 116, 130, 277,
Nakao, T., 161 Sawada, K., 134 Talochkin, A.B., 79
Zeuner, M., 148
Nakazawa, H., 269 Schaffler, F., 1, 306, 312, 394, Tambo, T., 161
Zhang, J., 104
Narusawa, T., 143 409 Tanabe, M., 265, 352, 3
Neo, Y., 16 Schelling, C., 1, 306, 409 Tanigawa, S., 320 Zhang, S.-K., 65
Neufeld, E., 398 Schley, P., 342, 347 Tanikawa, A., 281 Zhang, X., 92
Ni, W.-X., 414 Schmidt, O.G., 33 Tatsuoka, H., 248 Zheng, Y., 43
Nikiforov, A.I., 79 Schulte, J., 10, 285, 383, 387 Tatsuyama, C., 161 Zhou, X., 92
Niwano, M., 16 Senz, S., 409 Tezuka, T., 328, 338 Zhu, J., 39
Noda, T., 167 Seok, J.H., 96 Tillack, B., 189, 342 Zhuang, Y., 409
Seyringer, H., 306 Torige, Y., 116 Zhuravlev, K.S., 79
Thin Solid Films 369 (2000) 438-448
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Subject Index of Volume 369
Activation temperature Boron
Carrier activation process in As’ implanted relaxed Si,_,Ge, RHEED analysis of twinned homoepitaxial layers grown on
alloys, 203 Si(111)./3x./3-B, 5
Adsorption A novel measurement method of segregating adlayers in MBE,
Infrared study of adsorption and thermal decomposition of 138
Si,H, on Si(100), 16 Segregation and diffusion of impurities from doped Si,_,Ge,
Al predeposition films into silicon, 222
Effect of Al pre-deposition layer on the epitaxial growth of Boron adlayer
silicon on Al,O;/Si (111) substrates, 134 Drastic modification of the growth mode of Ge quantum dots on
Alloys Si by using boron adlayer, 84
Photoluminescence characterization of erbium doped Si,_,C Boron adsorption
alloys grown by MBE, 398 A novel doping technology for ultra-shallow junction fabrica-
As implantation tion: boron diffusion from boron-adsorbed layer by rapid
Carrier activation process in As’ implanted relaxed Si,_,Ge, thermal annealing, 207
alloys, 203 Boron diffusion
Atomic force microscope A novel doping technology for ultra-shallow junction fabrica-
New kinetic growth instabilities in $i(001) homoepitaxy, | tion: boron diffusion from boron-adsorbed layer by rapid
The formation of silicon (111) boron surface phases and their thermal annealing, 207
influence on the epitaxial growth of silicon and germanium, Boron doping
10 Heteroepitaxial growth of SiGe films and heavy B doping by
Control of self-assembling formation of nanometer silicon dots ion-beam sputtering, 171
by low pressure chemical vapor deposition, 55 A novel doping technology for ultra-shallow junction fabrica-
Positioning of self-assembling Ge islands on Si(111) mesas by tion: boron diffusion from boron-adsorbed layer by rapid
using atomic steps, 88 thermal annealing, 207
Residual strain and surface roughness of Si,;_,Ge, alloy layers Boron-mediated growth
grown by molecular beam epitaxy on Si(001) substrate, 161 Boron-mediated growth of Ge quantum dots on Si(100) sub-
Atomic layer doping strate, 92
Atomic layer doping of SiGe fundamentals and device appli- Boron redistribution
cations, 189 Epitaxial growth of heavily B-doped SiGe films and interfacial
reaction of Ti/B-doped SiGe bilayer structure using rapid
thermal processing, 130
8-FeSi,
Boron surface phase
Growth of B-FeSi, and FeSi layers by reactive deposition using The formation of silicon (111) boron surface phases and their
Sb-related intermetallic compounds, 248 influence on the epitaxial growth of silicon and germanium, 10
B>H,/H2
Drastic modification of the growth mode of Ge quantum dots on C49-TiSi,
Si by using boron adlayer, 84 The effect of elevated silicon substrate temperature on TiSi,
Band alignment formatio from a Ti film, 244
Band ordering of the pseudomorphic Si;—,Ge,/Si heterostruc- C54-TiSi,
ture: the fundamental role of excitons, 394 The effect of elevated silicon substrate temperature on TiSi,
Bandgap formatio from a Ti film, 244
Synthesis of SiGeC layers by ion implantation of Ge and C, 217 C54-Ti(SiGe),
Band-to-band tunneling Epitaxial growth of heavily B-doped SiGe films and interfacial
Drain leakage current and instability of drain current in Si/ reaction of Ti/B-doped SiGe bilayer structure using rapid
Si,_,Ge, MOSFETs, 379 thermal processing, 130
Bipolar transistor C-V
Comparative analysis of minority carrier transport in npn bipo- Capacitance—voltage study of single-crystalline Si dots on
lar transistors with Si, Si,_,Ge,, and Si,_,C, base layers, ultrathin buried SiO, formed by nanometer-scale local oxi-
347 dation, 69
PII: $0040-6090(00)00993-7
Subject index
Carbon Crystallization
Growth temperature dependence on the formation of carbon- Low-temperature growth of in situ phosphorus-doped silicon
induced Ge quantum dots, 96 films: two-step growth utilizing amorphous silicon buffers,
Photoluminescence characterization of erbium doped Si,_,C 185
alloys grown by MBE, 398
Carbon 60 Deep level transient spectroscopy
Initial stage of SiC film growth on Si(111)7X7 and Si(100)2x!1 Coulomb charging effect of holes in Ge quantum dots studied
surfaces using C,yy as a precursor studied by STM and by deep level transient spectroscopy, 65
HRTEM, 265 Delta doping
Carbon doping of SiGe Enhancement of thermal diffusion of delta-doped Sb in SiGe,
Comparison of SiGe and SiGe:C heterojunction bipolar transis- 226
tors, 342 Density of states
Carrier concentration ESR investigations of modulation-doped Si/SiGe quantum
Epitaxial growth of Si;_,-,Ge,C, film on Si(100) in a SiH,- wells, 312
GeH,-CH,SiH; reaction, 167 Deposition
Carrier heating Analysis of single Si atoms deposited on the Si(111)7X7 sur-
Field-enhanced Stokes shifts in strained Si,_,C,/Si(001) quan- face, 73
tum wells, 402 Desorb
Central-force-network model Thermal decomposition pathway of Ge and Si oxides: observa-
A study on the local bonding structures of oxidized Si(111) tion of a distinct difference, 289
surfaces, 277 Device yield
Chemical vapor deposition Comparison of SiGe and SiGe:C heterojunction bipolar transis-
Atomic layer doping of SiGe — fundamentals and device appli- tors, 342
cations, 189 Differential molecular beam epitaxy
Effect of Ge on the P doping in Si gas-source molecular beam Relaxed Siy 7Gey 3 buffer layers grown on patterned silicon sub-
epitaxy using Si,H, and PH;, 230 strates for SiGe n-channel HMOSFETs, 175
Si/SiGe n-type inverted modulation doping using ion implanta- Diffusion
tion, 324 Surface segregation and interdiffusion of Ge on Si(001) studied
Doped vs. undoped Si; _,-, Ge,C, layers in sub-100 nm vertical by medium-energy ion scattering, 112
p-channel MOSFETs, 366 Formation of relaxed SiGe films on Si by selective epitaxial
A self-aligned epitaxially grown channel MOSFET device growth, 126
architecture for strained Si/SiGe systems, 375 Segregation and diffusion of impurities from doped Si,_,Ge
Coaxial impact-collision ion scattering spectrometer films into silicon, 222
Effect of Al pre-deposition layer on the epitaxial growth of Enhancement of thermal diffusion of delta-doped Sb in SiGe,
silicon on Al,O;/Si (111) substrates, 134 226
Cobalt Doped vs. undoped Si, _,- ,Ge,C, layers in sub-100 nm vertical
Growth of epitaxial CoSi, for contacts of ultra-thin SOI MOS- p-channel MOSFETs, 366
FETs, 240 Disilane
Computer simulations Infrared study of adsorption and thermal decomposition of
Dynamics of surface phase separation on patterned substrates Si,H, on Si(100), 16
by molecular beam epitaxy, 21 Dislocations
Contacts Relaxed SiGe buffers with thicknesses below 0.1 jum, 152
Growth of epitaxial CoSi, for contacts of ultra-thin SO] MOS- Dissociative adsorption
FETs, 240 Atomic layer doping of SiGe — fundamentals and device appli-
Controlled arrangement cations, 189
Control of the arrangement of self-organized Ge dots on pat- Doping
terned Si(001) substrates, 49 Effect of Ge on the P doping in Si gas-source molecular beam
CoSi, epitaxy using Si,H, and PH;, 230
Epitaxial silicide interfaces in microelectronics, Dot array
CoTi alloy Control of the arrangement of self-organized Ge dots on pat-
Epitaxial silicide interfaces in microelectronics, terned Si(001) substrates, 49
Coulomb charging effect Drain current instability
Coulomb charging effect of holes in Ge quantum dots studied Drain leakage current and instability of drain current in Si
by deep level transient spectroscopy, 65 Si,_.Ge, MOSFETs, 379
Crystal growth Drain leakage current
Formation of the wetting layer in Ge/Si(111) studied by STM Drain leakage current and instability of drain current in Si
and XAFS, 29 Si,_.Ge, MOSFETs, 379
Crystallinity
Ge-induced enhancement of solid-phase crystallization ofS i on Elastic recoil detection
Si0>, 195 The formation of silicon (111) boron surface phases and their
Subject index
influence on the epitaxial growth of silicon and germanium, Esaki diodes
10 Self-assembling SiGe and SiGeC nanostructures for light emit-
Elastic recoil detection analysis ters and tunneling diodes, 33
Ge thin film growth on Si(111) surface using hydrogen surfac- A vertical MOS-gated Esaki tunneling transistor in silicon, 387
tant, 25 Excitons
Electrical properties Band ordering of the pseudomorphic Si,_,Ge,/Si heterostruc-
Si/SiGe/Si pMOS Performance - alloy scattering and other con- ture: the fundamental role of excitons, 394
siderations, 297 Exciton binding energy
Electroluminescence Band ordering of the pseudomorphic Si,_,Ge,/Si heterostruc-
Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by ture: the fundamental role of excitons, 394
molecular beam epitaxy, 414
Electron
Field effect devices
Transport properties of two-dimensional electron gas in a
Si/SiGe/Si pMOS Performance - alloy scattering and other con-
strained-Si/SiGe heterostructure at low carrier densities,
siderations, 297
328
Field-enhanced Stokes shift
Electron diffraction
RHEED analysis of twinned homoepitaxial layers grown on Field-enhanced Stokes shifts in strained Si,_,C,/Si(001) quan-
tum wells, 402
Si(111)./3x./3-B, 5
First principles calculation
Electron spin resonance
Synthesis of SiGeC layers by ion implantation of Ge and C, 217
ESR investigations of modulation-doped Si/SiGe quantum
wells, 312
Electronic coupling Gas source molecular beam epitaxy
Strain-driven modification of the Ge/Si growth mode in stacked Formation process and ordering of self-assembled Ge islands,
layers: a way to produce Ge islands having equal size in all 104
layers, 43 Gas-source MBE of SiC/Si using monomethylsilane, 269
Ellipsometry Germanium
In situ characterization of thin Si,_,Ge, films on Si(100) by Ge thin film growth on Si(111) surface using hydrogen surfac-
spectroscopic ellipsometry, 157 tant, 25
Emitter-coupled logic RHEED studies of nucleation of Ge islands on Si(001) and
Self-aligned selective-epitaxial-growth SiGe HBTs: process, optical properties of ultra-small Ge quantum dots, 79
device, and Ics, 352 Positioning of self-assembling Ge islands on Si(111) mesas by
Epitaxial film using atomic steps, 88
Growth of Mn doped epitaxial B-FeSi, films on Si(001) sub- Optical investigation of modified Stranski-Krastanov growth
strates by reactive deposition epitaxy, 253 mode in the stacking of self-assembled Ge islands, 108
Epitaxial silicide In situ characterization of thin Si;_,Ge, films on Si(100) by
Epitaxial silicide interfaces in microelectronics, 233 spectroscopic ellipsometry, 157
Epitaxy A novel structure in Ge/Si epilayers grown at low temperature,
RHEED analysis of twinned homoepitaxial layers grown on 182
Si(111)./3x./3-B, 5 Factors limiting the composition window for fabrication of
Relaxed SiGe buffers with thicknesses below 0.1 wm, 152 SiGe-on-insulator substrate by low-energy oxygen implan-
Low-temperature growth of in situ phosphorus-doped silicon tation, 213
films: two-step growth utilizing amorphous silicon buffers, Segregation and diffusion of impurities from doped Si,_,Ge,
185 films into silicon, 222
Atomic layer doping of SiGe — fundamentals and device appli- Transport properties of two-dimensional electron gas in a
cations, 189 strained-Si/SiGe heterostructure at low carrier densities, 328
Effect of Ge on the P doping in Si gas-source molecular beam Ge dots
epitaxy using Si,H, and PH;, 230 Drastic modification of the growth mode of Ge quantum dots on
Growth of epitaxial CoSi, for contacts of ultra-thin SOI MOS- Si by using boron adlayer, 84
FETs, 240 Ge islands
Growth of B-FeSi, and FeSi layers by reactive deposition using Formation process and ordering of self-assembled Ge islands,
Sb-related intermetallic compounds, 248 104
Heteroepitaxial growth of SrO on hydrogen-terminated Si(100) Ge nanocrystal
surface, 273 Formation of size controlled Ge nanocrystals in SiO, matrix by
Erbium ion implantation and annealing, 100
Photoluminescence characterization of erbium doped Si,_,C, Ge oxide
alloys grown by MBE, 398 Thermal decomposition pathway of Ge and Si oxides: observa-
Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by tion of a distinct difference, 289
molecular beam epitaxy, 414 Ge quantum dot
Properties of optically active Si:Er and Si,_,Ge, layers grown Growth temperature dependence on the formation of carbon-
by the sublimation MBE method, 426 induced Ge quantum dots, 96
Subject index
Geometric magnetoresistance High temperature sputtering
Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe Epitaxial silicide interfaces in microelectronics, 233
heterostructures, 333 High-resolution electron energy loss spectroscopy
A study on the local bonding structures of oxidized Si(111)
Ginzburg—Landau model surfaces, 277
Dynamics of surface phase separation on patterned substrates Hot carrier transport
by molecular beam epitaxy, 21 Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe
Graded-channel heterostructures, 333
Strained Si,-,Ge, graded channel PMOSFET grown by Hot electron
UHVCVD, 371 Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by
Groove islands molecular beam epitaxy, 414
A novel structure in Ge/Si epilayers grown at low temperature, H-terminated Si surface
182 A study on the local bonding structures of oxidized Si(111)
Growth instability surfaces, 277
New kinetic growth instabilities in Si(001) homoepitaxy, 1 Hut-clusters
Growth mechanism Formation process and ordering of self-assembled Ge islands,
Optical investigation of modified Stranski-Krastanov growth 104
mode in the stacking of self-assembled Ge islands, 108 Hydrogen
Initial stage of SiC film growth on Si(111)7X7 and Si(100)2x1 Ge thin film growth on Si(111) surface using hydrogen surfac-
surfaces using Cgy as a precursor studied by STM and tant, 25
HRTEM, 265 Hydrogen-terminated silicon
Heteroepitaxial growth of SrO on hydrogen-terminated Si(100)
Hall factor surface, 273
Experimental evidence of valence band deformation due to
strain in inverted hole channel of strained-Si pMOSFETs, Implantation
338 Epitaxial growth of Si,_,-,Ge,C, film on Si(100) in a SiH,-
Heavy B doping GeH,-CH,SiH; reaction, 167
Epitaxial growth of heavily B-doped SiGe films and interfacial Infrared absorption
reaction of Ti/B-doped SiGe bilayer structure using rapid Infrared study of adsorption and thermal decomposition of
thermal processing, 130 Si,H, on Si(100), 16
Heteroepitaxial Al,O; Inhomogeneous potential
Effect of Al pre-deposition layer on the epitaxial growth of Field-enhanced Stokes shifts in strained Si,_,C,/Si(001) quan-
silicon on Al,O,/Si (111) substrates, 134 tum wells, 402
Heteroepitaxial growth Integrated circuits
SiC/Si heteroepitaxial growth, 257 Self-aligned selective-epitaxial-growth SiGe HBTs: process,
Heteroepitaxy device, and Ics, 352
Gas-source MBE of SiC/Si using monomethylsilane, 269 Interdiffusion
Heterojunction bipolar transistor Growth of B-FeSi, and FeSi layers by reactive deposition using
Comparative analysis of minority carrier transport in npn bipo- Sb-related intermetallic compounds, 248
lar transistors with Si, Si;_,Ge,, and Si, _,C, base layers, 347 Interface mixing
Self-aligned selective-epitaxial-growth SiGe HBTs: process, Growth and characterization of “Ge,/“Ge,, isotope superlat-
device, and Ics, 352 tices, 405
Si; _,Ge, selective epitaxial growth for ultra-high-speed self- Interface roughness
aligned HBTs, 358 Low temperature buffer growth for modulation doped SiGe/Ge
Heterojunction devices SiGe heterostructures with high hole mobility, 320
Atomic layer doping of SiGe — fundamentals and device appli- Interface states
cations, 189 Capacitance—voltage study of single-crystalline Si dots on
Hetero-MOSFETs ultrathin buried SiO, formed by nanometer-scale local oxi-
Relaxed Sip 7Gep,; buffer layers grown on patterned silicon sub- dation, 69
strates for SiGe n-channel HMOSFETs, 175 Intermixing
High-speed transport in Si/Si, _,-,Ge,C, heterostructures, 306 Formation of the wetting layer in Ge/Si(111) studied by STM
Heterostructure and XAFS, 29
Limited number of carriers transferred to the strained-Si chan- Inverted
nel in the SiGe/Si/SiGe modulation-doped field-effect tran- Si/SiGe n-type inverted modulation doping using ion implanta-
sistor, 362 tion, 324
Transport properties of two-dimensional electron gas in a lon implantation
strained-Si/SiGe heterostructure at low carrier densities, 328 Formation ofs ize controlled Ge nanocrystals in SiO, matrix by
Heterostructure metal oxide semiconductor field-effect transistor ion implantation and annealing, 100
Strained Si,_,Ge, graded channel PMOSFET grown by Synthesis of SiGeC layers by ion implantation of Ge and C,
UHVCVD, 371 217
442 Subject index
Si/SiGe n-type inverted modulation doping using ion implanta- Metal-oxide semiconductor structure
tion, 324 Strain near SiO,—Si interface revealed by X-ray diffraction
lon scattering intensity enhancement, 281
Surface segregation and interdiffusion of Ge on Si(001) studied Optimization of breakdown behaviour and short channel effects
by medium-energy ion scattering, 112 in MBE-grown vertical MOS-devices with local channel
lon scattering spectroscopy doping, 383
Ge thin film growth on Si(111) surface using hydrogen surfac- Metal-oxide-semiconductor field effect transistor
tant, 25 Experimental evidence of valence band deformation due to
lon-beam sputtering strain in inverted hole channel of strained-Si pMOSFETs,
Heteroepitaxial growth of SiGe films and heavy B doping by 338
ion-beam sputtering, 171 A self-aligned epitaxially grown channel MOSFET device
Iron disilicide architecture for strained Si/SiGe systems, 375
Growth of Mn doped epitaxial B-FeSi, films on Si(001) sub- Drain leakage current and instability of drain current in Si/
strates by reactive deposition epitaxy, 253 Si,_,Ge, MOSFETs, 379
Islands Methylsilane
Step bunching and correlated SiGe nanostructures on Si(113), Epitaxial growth of Si,;_,-,Ge,C, film on Si(100) in a SiH,-
39 GeH,-CH;SiH; reaction, 167
A novel structure in Ge/Si epilayers grown at low temperature, MeV ion beam scattering
182 Characterization of SiGeC thin films by MeV ion scattering and
Isotope superlattices X-ray diffraction, 143
Gr" owth and characteriz° ati.o n of . “Ge,/'T"hmG e, i‘ sotope superlat- Micro-Raman spectroscopy
tices, 405 Relaxed Sig 7Geo,; buffer layers grown on patterned silicon sub-
strates for SiGe n-channel HMOSFETs, 175
Migration
Lattice location of constituent atoms Nucleation and growth of Ge on Si(111) in solid phase epitaxy,
Characterization of SiGeC thin films by MeV ion scattering and 116
X-ray diffraction, 143 Minority carrier mobility
Lattice strain Comparative analysis of minority carrier transport in npn bipo-
Formation of the wetting layer in Ge/Si(111) studied by STM lar transistors with Si, Si,_,Ge,, and Si, _,C, base layers, 347
and XAFS, 29 Misfit stress relaxation
Light emitting diode Relaxed SiGe buffers with thicknesses below 0.1 um, 152
Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by Mn doping
molecular beam epitaxy, 414 Growth of Mn doped epitaxial B-FeSi, films on Si(001) sub-
Linear-chain model strates by reactive deposition epitaxy, 253
Growth and characterization of "Ge,/“Ge,, isotope superlat- Mobility
tices, 405 Alternatives to thick MBE-grown relaxed SiGe buffers, 148
LO phonons High-speed transport in Si/Si,_,-,Ge,C,, heterostructures, 306
Growth and characterization of "Ge, Ge, isotope superlat- Transport properties of two-dimensional electron gas in a
tices, 405 strained-Si/SiGe heterostructure at low carrier densities, 328
Local bonding structure of Si-O-Si species Modulation doped field effect transistor
A study on the local bonding structures of oxidized Si(111) Alternatives to thick MBE-grown relaxed SiGe buffers, 148
surfaces, 277 Modulation doped structure
Localization Low temperature buffer growth for modulation doped SiGe/Ge/
Optical and structural characterization of Si/SiGe heterostruc- SiGe heterostructures with high hole mobility, 320
tures grown by RTCVD, 431 Modulation doping
Low temperature growth ESR investigations of modulation-doped Si/SiGe quantum
Relaxed SiGe buffers with thicknesses below 0.1 ym, 152 wells, 312
Low-energy plasma-enhanced chemical vapor deposition High-speed transport in Si/Si,;_,-,Ge,C, heterostructures, 306
Alternatives to thick MBE-grown relaxed SiGe buffers, 148 Modulation-doped field effect transistor
Low-pressure chemical vapor deposition Schottky gating high mobility Si/Si,_,Ge, 2D electron systems,
Control of self-assembling formation of nanometer silicon dots 316
by low pressure chemical vapor deposition, 55 Limited number of carriers transferred to the strained-Si chan-
Low-temperature buffer nel in the SiGe/Si/SiGe modulation-doped field-effect tran-
Low temperature buffer growth for modulation doped sistor, 362
SiGe/Ge/SiGe heterostructures with high hole mobility, Molar beam epitaxy
320 New kinetic growth instabilities in Si(001) homoepitaxy, 1
Luminescence Dynamics of surface phase separation on patterned substrates
Properties of optically active Si:Er and Si,_,Ge, layers grown by molecular beam epitaxy, 21
by the sublimation MBE method, 426 Nanostructures in silicon devices, 60
Subject index
Positioning of self-assembling Ge islands on Si(111) mesas by Nucleation center
using atomic steps, 88 Drastic modification of the growth mode of Ge quantum dots on
Boron-mediated growth of Ge quantum dots on Si(100) sub- Si by using boron adlayer, 84
strate, 92
Growth temperature dependence on the formation of carbon- Optical properties
induced Ge quantum dots, 96 Anomalous surface absorption band at 1.2 eV in Si,_ ,Ge, alloy-
Alternatives to thick MBE-grown relaxed SiGe buffers, 148 based structures, 423
Residual strain and surface roughness of Si,_,Ge, alloy layers Optical spectroscopy
grown by molecular beam epitaxy on Si(001) substrate, 161 Optical investigation of modified Stranski-Krastanov growth
SiC/Si heteroepitaxial growth, 257 mode in the stacking of self-assembled Ge islands, 108
Limited number of carriers transferred to the strained-Si chan- Optical waveguide
nel in the SiGe/Si/SiGe modulation-doped field-effect tran- Y-branch 1.3/1.55 ym wavelength demultiplexer based on the
sistor, 362 plasma dispersion effect, 419
Optimization of breakdown behaviour and short channel effects Optical-fiber-link
in MBE-grown vertical MOS-devices with local channel Self-aligned selective-epitaxial-growth SiGe HBTs: process,
doping, 383 device, and Ics, 352
A vertical MOS-gated Esaki tunneling transistor in silicon, 387 Ordering
Investigation of the emitter structure in SiGe/Si resonant tun- Step bunching and correlated SiGe nanostructures on Si(113),
neling structures, 390 39
Photoluminescence characterization of erbium doped Si,_,C, Oxidation
alloys grown by MBE, 398 Anomalous surface absorption band at 1.2 eV in Si,_ ,Ge, alloy-
Growth and characterization of “’Ge,/“Ge, isotope superlat- based structures, 423
tices, 405 Oxide mediated epitaxy
Structural and optical properties of Si/Si;_,Ge, wires, 409 Epitaxial silicide interfaces in microelectronics, 233
Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by
molecular beam epitaxy, 414 Patterned substrate
Y-branch 1.3/1.55 wm wavelength demultiplexer based on the Dynamics of surface phase separation on patterned substrates
plasma dispersion effect, 419 by molecular beam epitaxy, 21
Molecular dynamics simulation Percolation
SiC/Si heteroepitaxial growth, 257 Formation of the wetting layer in Ge/Si(111) studied by STM
Molecular orbital and XAFS, 29
Non-equilibrium molecular orbital calculations of Si/SiO, Phase transition
interfaces, 285 The effect of elevated silicon substrate temperature on TiSi
Monomethylsilane formatio from a Ti film, 244
Gas-source MBE of SiC/Si using monomethylsilane, 269 Phonon confinement
Monte-Carlo Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe
Non-equilibrium molecular orbital calculations of Si/SiO; heterostructures, 333
interfaces, 285 Phosphorus
Epitaxial growth of Si,;_,-,Ge,C, film on Si(100) in a SiH,-
Nanometer-scale local oxidation GeH,-CH;SiH; reaction, 167
Capacitance—voltage study of single-crystalline Si dots on Low-temperature growth of in situ phosphorus-doped silicon
ultrathin buried SiO, formed by nanometer-scale local oxi- films: two-step growth utilizing amorphous silicon buffers,
dation, 69 185
Nanostructures Segregation and diffusion of impurities from doped Si,_,Ge
Nanostructures in silicon devices, 60 films into silicon, 222
Nitridation of Si(100) Effect of Ge on the P doping in Si gas-source molecular beam
Scanning tunneling microscopy/scanning tunneling spectro- epitaxy using Si,H, and PH;, 230
scopy of initial nitridation process of Si(100)-2X1 surfaces, Photoluminescence
293 Self-assembling SiGe and SiGeC nanostructures for light emit-
Non-equilibrium ters and tunneling diodes, 33
Non-equilibrium molecular orbital calculations of Si/SiO, Photoluminescence characterization of erbium doped Si,_,C
interfaces, 285 alloys grown by MBE, 398
Non-Rutherford resonant elastic scattering Structural and optical properties of Si/Si,- Ge, wires, 409
Characterization of SiGeC thin films by MeV ion scattering and Optical and structural characterization of Si/SiGe heterostruc-
X-ray diffraction, 143 tures grown by RTCVD, 431
Nucleation PIN-diodes
Control of self-assembling formation of nanometer silicon dots Nanostructures in silicon devices, 60
by low pressure chemical vapor deposition, 55 Plasma dispersion effect
Ge-induced enhancement of solid-phase crystallization ofS i on Y-branch 1.3/1.55 wm wavelength demultiplexer based on the
S105, 195 plasma dispersion effect, 419
444 Subject index
Point defects Residual strain
Relaxed SiGe buffers with thicknesses below 0.1 jum, 152 Residual strain and surface roughness of Si; _,Ge, alloy layers
Polycrystalline grown by molecular beam epitaxy on Si(001) substrate, 161
Low-temperature growth of in situ phosphorus-doped silicon Resistivity
films: two-step growth utilizing amorphous silicon buffers, Epitaxial growth of Si,;_,-,Ge,C, film on Si(100) in a SiH,-
185 GeH,-CH;SiH; reaction, 167
Pyramid-shaped islands Growth of epitaxial CoSi, for contacts of ultra-thin SO] MOS-
Formation process and ordering of self-assembled Ge islands, FETs, 240
104 Resonant tunneling devices
Investigation of the emitter structure in SiGe/Si resonant tun-
Quantum dots neling structures, 390
The formation of silicon (111) boron surface phases and their RF performance
influence on the epitaxial growth of silicon and germanium, Comparison of SiGe and SiGe:C heterojunction bipolar transis-
10 tors, 342
Self-assembling SiGe and SiGeC nanostructures for light emit- Ridges
ters and tunneling diodes, 33 Control of the arrangement of self-organized Ge dots on pat-
Strain-driven modification of the Ge/Si growth mode in stacked terned Si(001) substrates, 49
layers: a way to produce Ge islands having equal size in all Ripening
layers, 43 Nucleation and growth of Ge on Si(111) in solid phase epitaxy,
Coulomb charging effect of holes in Ge quantum dots studied 116
by deep level transient spectroscopy, 65
RHEED studies of nucleation of Ge islands on Si(001) and
optical properties of ultra-small Ge quantum dots, 79 Sb
Boron-mediated growth of Ge quantum dots on Si(100) sub- Enhancement of thermal diffusion of delta-doped Sb in SiGe,
strate, 92 226
Growth of B-FeSi, and FeSi layers by reactive deposition using
Radical nitrogen Sb-related intermetallic compounds, 248
Scanning tunneling microscopy/scanning tunneling spectro- Sb surfactant
scopy of initial nitridation process of Si(100)-2X1 surfaces, Experimental study of a surfactant-assisted SiGe graded layer
293 and a symmetrically strained Si/Ge superlattice for thermo-
Raman scattering electric applications, 121
Growth and characterization of “Ge,/“Ge, isotope superlat- Scanning tunneling microscopy
tices, 405 The formation of silicon (111) boron surface phases and their
Random alloy influence on the epitaxial growth of silicon and germanium,
Formation of the wetting layer in Ge/Si(111) studied by STM 10
and XAFS, 29 Analysis of single Si atoms deposited on the Si(111)7X7 sur-
Rapid thermal annealing face, 73
A novel doping technology for ultra-shallow junction fabrica- Nucleation and growth of Ge on Si(111) in solid phase epitaxy,
tion: boron diffusion from boron-adsorbed layer by rapid 116
thermal annealing, 207 Initial stage of SiC film growth on Si(111)7X7 and Si(100)2x!1
Rapid thermal chemical vapor deposition surfaces using Coo as a precursor studied by STM and
Epitaxial growth of heavily B-doped SiGe films and interfacial HRTEM, 265
reaction of Ti/B-doped SiGe bilayer structure using rapid Scanning tunneling microscopy/scanning tunneling spectro-
thermal processing, 130 scopy ofi nitial nitridation process of Si(100)-2X1 surfaces,
Rapid thermal oxidation 293
Strained Si,_,Ge, graded channel PMOSFET grown by Scattering
UHVCVD, 371 Transport properties of two-dimensional electron gas in a
Reactive deposition epitaxy strained-Si/SiGe heterostructure at low carrier densities, 328
Growth of Mn doped epitaxial B-FeSi, films on Si(001) sub- Schottky gating
strates by reactive deposition epitaxy, 253 Schottky gating high mobility Si/Si,_,Ge, 2D electron systems,
Reduced pressure chemical vapor deposition 316
Low-temperature growth of in situ phosphorus-doped silicon Screening
films: two-step growth utilizing amorphous silicon buffers, Transport properties of two-dimensional electron gas in a
185 strained-Si/SiGe heterostructure at low carrier densities,
Relaxed SiGe buffer layers 328
Relaxed Sip 7Gey,; buffer layers grown on patterned silicon sub- Segregation
strates for SiGe n-channel HMOSFETs, 175 Segregation and diffusion of impurities from doped Si,_,Ge,
Relaxed SiGe films films into silicon, 222
Formation of relaxed SiGe films on Si by selective epitaxial Enhancement of thermal diffusion of delta-doped Sb in SiGe,
growth, 126 226
