STMicroelectronics STP40NF10L Datasheet (Rev. 3)

0.23 MB·English

by  STMicroelectronics

STP40NF10L
Ω
N-channel 100V - 0.028 - 40A TO-220
Low gate charge STripFET™ Power MOSFET
General features

Type V R I
DSS DS(on) D
STP40NF10L 100V <0.033Ω 40A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization 3
2
1
Description TO-220
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input

capacitance and gate charge. It is therefore Internal schematic diagram
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STP40NF10L P40NF10L TO-220 Tube
January 2007 Rev 3 1/12
www.st.com 12
Contents STP40NF10L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP40NF10L Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V Drain-source voltage (v = 0) 100 V
DS gs
V Gate- source voltage ±17 V
GS
I Drain current (continuous) at T = 25°C 40 A
D C
I Drain current (continuous) at T = 100°C 25 A
D C
I (1) Drain current (pulsed) 160 A
DM
P Total dissipation at T = 25°C 150 W
TOT C
Derating factor 1 W/°C
E (2) Single pulse avalanche energy 430 mJ
AS
Tstg Storage temperature – 65 to 175
°C
T Max. operating junction temperature 175
j
1. Pulse width limited by safe operating area
2. Starting T= 25°C, I = 20A, V =40V
j D DD
Table 2. Thermal data
R Thermal resistance junction-case Max 1 °C/W
thj-case
R Thermal resistance junction-ambient Max 62.5 °C/W
thj-a
Maximum lead temperature for soldering
T 300 °C
l purpose
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Electrical characteristics STP40NF10L
2 Electrical characteristics
(T =25°C unless otherwise specified)
CASE
T able 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source
V I = 250 µA, V = 0 100 V
(BR)DSS Breakdown voltage D GS
V = Max rating 1 µA
DS
Zero gate voltage
IDSS Drain current (VGS = 0) VDS=Max rating, 10 µA
T =125°C
C
Gate-body leakage
I V = ±17V ±100 nA
GSS current (V = 0) GS
DS
V Gate threshold voltage V = V , I = 250µA 1 1.7 2.5 V
GS(th) DS GS D
R Static drain-source on VGS = 10V, ID = 20A 0.028 0.033 Ω
DS(on) resistance V = 5V, I = 20A 0.030 0.036 Ω
GS D
T able 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g (1) Forward transconductance V = 15V I =20A 25 S
fs DS , D
C Input capacitance 2300 pF
iss
C Output capacitance V = 25V, f = 1 MHz, 290 pF
oss DS
V = 0
Reverse transfer GS
C 125 pF
rss capacitance
Q Total gate charge 46 64 nC
g
V = 80V, I = 40A,
Q Gate-source charge DD D 12 nC
gs V = 5V
GS
Q Gate-drain charge 22 nC
gd
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
T able 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
V = 50V, I = 20A
t Turn-on delay time DD D 25 ns
d(on) R =4.7Ω V = 4.5V
G GS
t Rise time 82 ns
r (see Figure 13)
V = 50V, I = 20A, ns
t Turn-off-delay time DD D 64
d(off) R =4.7Ω, V = 4.5V ns
t Fall time G GS 24
f (see Figure 13)
td(off) Off-voltage Rise Time Vclamp =80V, ID = 40 A 51 ns
tf Fall Time RG=4.7Ω, VGS = 4.5V 29 ns
t Cross-over time (see Figure 15) 53 ns
c
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STP40NF10L Electrical characteristics
T able 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I Source-drain current 40 A
SD
I (1) Source-drain current (pulsed) 160 A
SDM
V (2) Forward on voltage I = 40A, V = 0 1.3 V
SD SD GS
I = 40A, V = 30V
t Reverse recovery time SD DD 110 ns
rr di/dt = 100A/µs,
Q Reverse recovery charge 467 nC
rr T = 150°C
I Reverse recovery current j 8 A
RRM (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics STP40NF10L
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characteristics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

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STP40NF10L Electrical characteristics
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature temperature

Figure 11. Source-drain diode forward Figure 12. Normalized breakdown voltage vs.
characteristics tj

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Test circuit STP40NF10L
3 Test circuit
Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

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STP40NF10L Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
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Package mechanical data STP40NF10L

TO-220 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
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