Table Of Content~) 10 N. I 16 Ar I 36 Kr I 54 X. I 86 Rn I H131
~
I
5 6 7 8 a
9 F 17 CI 35 Br 53 I 85 8At
6 o 3 16 5 9 34 S. 10 52 T.II 84 Po 12 71 Lu 103 Lr 71
7 N 4 15 P 16 33 As 17 51 Sb 18 83 Bi 19 70 Yb 102 No 71
6 C 14 14 Si 15 32 G.45 50 Sn 46 82 Pb 47 69 Tm 101 Md 71
, 13 35 36 37 38 71
bers I 5 B 13 AI 31 Ga 49 In 81 TI 68 Er 100 Fm
n System Num I I I I I 29 30 Cu 60 Zn 32 47 48 A61 Cd 33 g 80 79 H34 Au 62 g 66 67 Ho Dy 98 99 Cf 71 Es 71
meli 57 65 68 71
G 26 Ni 46 Pd 78 Pt 65 Tb 97 Bk
e
thwith 27 Co 58 45 64 Rh 77 Ir 67 84 Gd 96 71 Cm
nts 59 63 66 71
me 26 F. 44 Ru 76 Os 63 Eu 95 Am
e !
Table of Elthe I I ! I I 24 25 56 Cr 52 Mn 42 43 M53 Tc 69 o 74 75 W 54 R.70 61 62 Pm Sm 93 94 Np 71 Pu 71
eriodie 23 V 48 41 49 Nb 73 Ta 50 105 71 - 60 Nd 92 U 55
P
i I I i I I 21 22 Sc 39 Ti 41 39 40 Y 39 Zr 42 72 57** Hf 43 La 39 104 89*** 71 40 Ac 59 58 C. Pr 91 90 Th44 Pa 51
II I 4 B.26 12 M27 g 20 Ca 28 38 Sr 29 56 Ba 30 88 Ra 31 ides an 39 nides
I H 2 3 Li 20 JJ 21 Na 19 • K 22 37 24 Rb 55 Cs 25 87 25a Fr .Lanth **Acti --
~
• r • lf a t ,-f .-l' • lf rä i
Gmelin Handbook of Inorganic
and Organometallic Chemistry
8th Edition
Gmelin Handbook of Inorganic
and Organometallic Chemistry
8th Edition
Gmelin Handbuch der Anorganischen Chemie
Achte, völlig neu bearbeitete Auflage
PREPARED Gmelin-Institut für Anorganische Chemie
AND ISSUED BV der Max-Planck-Gesellschaft
zur Förderung der Wissenschaften
Director: Ekkehard Fluck
FOUNDED BV Leopold Gmelin
8TH EDITION 8th Edition begun under the auspices of the
Deutsche Chemische Gesellschaft by R. J. Meyer
CONTINUED BV E. H. E. Pietsch and A. Kotowski, and by
Margot Becke-Goehring
Springer-Verlag Berlin Heidelberg GmbH
Gmelin-Institut für Anorganische Chemie
der Max-Planck-Gesellschaft zur Förderung der Wissenschaften
ADVISORY BOARD
Dr. G. Breil, Chairman (Ruhrchemie AG, Oberhausen-Holten), Prof. Dr. K. Dehnicke (Philipps
Universität, Marburg), Prof. Dr. N. N. Greenwood (University of Leeds), Prof. Dr. H. Grünewald
(Bayer AG, Leverkusen), Prof. Dr. H. Harnisch (Hoechst AG, Frankfurt/Main-Höchst), Prof. Dr.
H. Nöth (Universität München), Prof. Dr. H. Offermanns (Degussa AG, Frankfurt/Main), Prof. Dr.
G. zu Putlitz (Universität Heidelberg), Prof. Dr. A. Simon (Max-Planck-Institut für Festkörper
forschung, Stuttgart), Prof. Dr. Dr. h.c. mult. G. Wilke (Max-Planck-Institut für Kohlenfor
schung, Mülheim/Ruhr), Prof. Dr. H. F. Zacher (Präsident der Max-Planck-Gesellschaft,
München)
DIRECTOR
Prof. Dr. Dr. h.c. Ekkehard Fluck
CORRESPONDENT MEMBERS OF THE SCIENTIFIC STAFF Dr. A. W. Frank, Dr. U. Krüerke,
Dr. A. R. Pebler, Dr. G. P. Richter,
Dr. K. Rumpf
EMERITUS MEMBER OF THE INSTITUTE Prof. Dr. Dr. E. h. Margot Becke
CORRESPONDENT MEMBERS OF THE INSTITUTE Prof. Dr. Dr. h.c. Hans Bock
Prof. Dr. Dr. Alois Haas, Sc. D. (Cantab.)
GMELIN HANDBOOK
Dr. J. von Jouanne
Dr. H. Bergmann, J. Füssel, Dr. H. Katscher, Dr. R. Keim, Dr. E. Koch, Dipl.-Phys. D. Koschel,
Dr. A. Kubny, Dr. P. Merlet, Dr. F. A. Schröder, Dr. A. Slawisch, Dr. W. Töpper
Dr. R. Albrecht, Dr. G. Bär, D. Barthel, Dr. N. Baumann, Dr. K. Behrends, Dr. W. Behrendt,
D. Benzaid, Dr. L. Berg, Dr. R. Bohrer, K. D. Bonn, Dr. U. Busch, Dipl.-Ing. V. A. Chavizon,
E. Cloos, Dipl.-Phys. G. Czack, A. Dittmar, Dipl.-Geol. R. Ditz, R. Dowideit, Dipl.-Chem.
M. Drößmar, P. Dürr, U. Duggen, Dr. H.-J. Fachmann, Dr. J. Faust, B. Fischer, Dipl.-Ing.
N. GageI, Dipl.-Phys. D. Gras, Dr. K. Greiner, Dipl.-Bibl. W. Grieser, Dr. I. Haas, Dr. R. Haubold,
Dipl.-Min. H. Hein, Dipl.-Phys. C. Heinrich-Sterzel, A. Heise, H.-P. Hente, H. W. Herold,
U. Hettwer, Dr. G. Hönes, Dr. W. Hoffmann, G. Horndasch, Dr. W. Huisl, Dr. M. Irmler, B. Jaeger,
Dr. R. Jotter, Dipl.-Chem. P. Kämpf, Dr. B. Kalbskopf, Dipl.-Chem. W. Karl, H.-G. Karrenberg,
Dipl.-Phys. H. Keller-Rudek, B. Kirchner, Dipl.-Chem. C. Koeppel, R. Kolb, Dr. M. Kotowski,
E. Kranz, Dipl.-Chem. I. Kreuzbichler, Dr. V. Kruppa, Dr. W. Kurtz, M. Langer, Dr. B. Ledüc, Dr.
A. Leonard, H. Mathis, E. Meinhard, M. Meßer, C. Metz, K. Meyer, Dr. M. Mirbach, Dipl.-Chem.
B. Mohsin, Dr. U. Neu-Becker, K. Nöring, Dipl.-Min. U. Nohl, Dr. U. Ohms-Bredemann, Prof. Dr.
W. Petz, I. Rangnow, Dipl.-Phys. H.-J. Richter-Ditten, E. Rudolph, G. Rudolph, Dipl.-Chem.
S. Ruprecht, Dr. B. Sarbas, Dr. H. Schäfer, Dr. R. Schemm, Dr. D. Schiöberg, P. Schleimer,
V. Schlicht, Dipl.-Chem. D. Schneider, A. SchwärzeI, Dr. B. Schwager, Dipl.-Ing. H. M. Somer,
Dr. C. Strametz, G. Strauss, Dr. G. Swoboda, M. Teichmann, Dr. D. Tille, A. Tuttas, Dipl.-Ing.
U. Vetter, H.-M. Wagner, Dipl.-Phys. J. Wagner, R. Wagner, Dr. E. Warkentin, Dr. C. Weber, Dr.
A. Wietelmann, Dr. M. Winter, Dr. B. Wöbke, K. Wolff
GMELIN ONLINE
Dr. R. DepLanque
Dr. P. Kuhn, Dr. G. Olbrich
Dr. R. Baier, Dr. B. Becker, Dipl.-Chem. E. Best, Dr. H.-U. Böhmer, Dipl.-Phys. R. Bost, Dr.
A. Brandl, Dr. R. Braun, Dipl.-Chem. R. Durban, R. Hanz, Dr. A. Kirchhoff, Dipl.-Chem.
H. Köttelwesch, Dipl.-Ing. W. Korba, Dr. M. Kunz, Dr. L. Leichner, Dipl.-Chem. R. Maass, Dr.
A. Nebel, LJipl.-Chem. R. Nohl, Dr. B. Rempfer, Dr. U. TÖlle, Dipl.-Ing. H. Vanecek
Gmelin Handbook Volumes on "Silicon" (Syst. No. 15)
Silicon Main Volume B
Element and Compounds -1959
Silicon Main Volume C
Organic Silicon Compounds - 1958
Silicon Suppl Vol B 1
Silicon and Noble Gases. Silicon and Hydrogen (including SiHn-Oxygen Compounds) -1982
Silicon Suppl. Vol B 2
Properties of Crystalline Silicon Carbide. Diodes. Molecular Species in the Gas Phase.
Amorphous Silicon-Carbon AUoys - 1984
Silicon Suppl. Vol. B 3
System Si-C. SiC: Natural Occurrence. Preparation and Manufacturing Chemistry. Special
Forms. Manufacture. Electrochemical Properties. Chemical Reactions. Applications. Ternary
and Higher Systems with Si and C -1986
Silicon Suppl. Vol. B 4
System Si-No Binary and Ternary Silicon Nitrides. Silicon-Nitrogen-Hydrogen Compounds.
N-Substituted Silicon-Nitrogen Compounds -1989
SIlicon Suppl. Vol B 5c
Silicon Nitride in Microelectronics and Solar CeUs (present volume) -1991
Gmelin Handbook of Inorganic
and Organometallic Chemistry
8th Edition
Si
Silicon
Supplement Volume B Sc
Silicon Nitride in Microelectronics and Solar CeUs
With 52 illustrations
AUTHORS Chapters 1 to 31: In cooperation with Eberhard F. Krimmel,
Universität Frankfurt/Main
Chapter 32: Rudolf Hezel, Universität Erlangen - Nürnberg
SUBJECT INDEX Eberhard F. Krimmel, Universität Frankfurt/Main; Rainer Bohrer and
Uwe Nohl, Gmelin Institute, FrankfurtiMain
EDITOR Alfred Pebler, Gmelin Institute, Frankfurt/Main
CHIEF EDITOR Friedrich Schröder, Gmelin Institute, Frankfurt/Main
System Number 15
Springer-Verlag Berlin Heidelberg GmbH
LITERATURE CLOSING DATE: JANUARY 1990
IN SOME CASES MORE RECENT DATA HAVE BEEN CONSIDERED
Library 01 Congrass Catalog Card Number: Agr 25-1383
ISBN 978-3-662-09903-2 ISBN 978-3-662-09901-8 (eBook)
DOI 10.1007/978-3-662-09901-8
This work is subjectto copyright. All rights are reserved. whether the whole or pari 01 the material is concerned. specilica~y those 01
translation. reprin1ing. reuse 01 illustrations, broadcasting, reproduction by photocopying machine or similar means, and storage in
date banks. Under § 54 01 the German Copyright Law where copies are made lor other than private use, a lee is peyable to
"Verwerlungsgesellschafl Worl", Munieh.
C by Springer-Verlag Bertin Heidelberg 1991
Originally published by Springer-Verlag, Berlin' Heidelberg- New York' Landen' Paris' Tokyo' Hang Kong'
Barcelona in 1991.
Softcover reprint of the hardcover 8th edition 1991
The usa 01 registered names, trademarks, etc., in this publlcation does not imply, even in the absence 01 a specilic statement, that
such names are exempt Irom the relevant protective laws and regulations and therelcre Iree lor general use.
Preface
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover
silicon nitride, a normaUy solid material with the idealized formula Si3N4. This volume,
"Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec
tronics and solar ceUs. The compendium is the product of a critical selection among more than
17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900
publications dealing with the fabrication and use of microelectronic devices (including 2400
Japanese patent applications), about 4000 papers have been selected for this volume.
The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non
specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of
silicon nitride in specific devices and device components, and Chapter 32 is devoted
exclusively to applications in solar ceUs, including information on our general understanding
of the role of silicon nitride in photovoltaic devices.
Experimental results on the preparation of silicon nitride layers for application in unspeci
fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices,
the information is presented in the respective chapters. The general preparation of silicon
nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume
B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
A list of the abbreviations and acronyms used in this volume immediately precedes the
subject index at the end of the volume.
Frankfurt/Main, June 1991 Friedrich Schröder
