Table Of ContentSpringer Series in Electrophysics
Volume 21
Edited by Walter Engl
Springer Series in Electrophysics
Editors: D.H. Auston G. Ecker W. Engl L.B.Felsen
Volume 1 Structural Pattern Recognition By T. Pavlidis
Volume 2 Noise in Physical Systems Editor: D. Wolf
Volume 3 The Boundary-Layer Method in Diffraction Problems
By V. M. Babic, N. Y. Kirpicnikova
Volume 4 Cavitation and Inhomogeneities in Underwater Acoustics
Editor: W Lauterborn
Volume 5 Very Large Scale Integration (VLSI)
Fundamentals and Applications
Editor: D. F. Barbe 2nd Edition
Volume 6 Parametric Electronics An Introduction
By K-H. Locherer, C. D. Brandt
Volume 7 Insulating Films on Semiconductors
Editors: M. Schulz, G. Pensl
Volume 8 Theoretical Fundamentals of the Ocean Acoustics
By L. Brekhovskikh, Y. P. Lysanov
Volume 9 Principles of Plasma Electrodynamics
By A. F. Alexandrov, L. S. Bogdankevich, A. A. Rukhadze
Volume 10 Ion Implantation Techniques
Editors: H. Ryssel, H. Glawischnig
Volume 11 Ion Implantation: Equipment and Techniques
Editors: H. Ryssel, H. Glawischnig
Volume 12 Fundamentals of VLSI Technology
Editor: Y. Tarui
Volume 13 Physics of Highly Charged Ions
By R. K Janev, L. P. Presnyakov, V. P. Shevelko
Volume 14 Plasma Physics for Physicists
By I. A. Artsimovich, R. Z. Sagdeev
Volume 15 Relativity and Engineering
By 1. Van Bladel
Volume 16 Elements of Random Process Theory
By S. M. Rytov, Y. A. Kravtsov, V. I. Tatarsky
Volume 17 Concert Hall Acoustics
ByY. Ando
Volume 18 Planar Circuits for Microwaves and Lightwaves
by T. Okoshi
Volume 19 Physics of Shock Waves in Gases and Plasmas
By M. A. Liberman, A. L. Velikovich
Volume 20 Kinetic Theory of Particles and Photons
By J. Oxenius
Volume 21 Picosecond Electronics and Optoelectronics
Editors: G.A. Mourou, D.M. Bloom, C.-H. Lee
Picosecond Electronics
and Optoelectronics
Proceedings of the Topical Meeting
Lake Tahoe, Nevada, March 13-15,1985
Editors:
G.A. Mourou, D.M. Bloom, and C.-H. Lee
With 202 Figures
Springer-Verlag
Berlin Heidelberg New York Tokyo
Dr. Gerard Albert Mourou
The University of Rochester, Department of Physics, Rochester, NY 14627, USA
Dr. David M. Bloom
Edward L. Ginzton Laboratory, Stanford University. Stanford, CA 94305, USA
Dr. Chi-H. Lee
Department of Electrical Engineering, University of Maryland,
College Park, MD 20742, USA
Series Editors:
Dr. David H. Auston
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, USA
Professor Dr. GUnter Ecker
Ruhr-Universitat Bochum, Theoretische Physik, Lehrstuhl I,
Universitatsstrasse 150, D-4630 Bochum-Querenburg, Fed. Rep. of Germany
Professor Dr. Walter Engl
Institut flir Theoretische Elektrotechnik, Rhein.-Westf. Technische Hochschule,
Templergraben 55, D-5100 Aachen, Fed. Rep. of Germany
Professor Leopold B. Felsen Ph.D.
Polytechnic Institute of New York, 333 Jay Street, Brooklyn, NY 11201, USA
lSBN-13: 978-3-642-70782-7 e-lSBN-13: 978-3-642-70780-3
DOl: 10.1007/978-3-642-70780-3
Library of Congress Cataloging in Publication Data. Main entry under title: Picosecond electronics and
optoelectronics. (Springer series in electrophysics ; v. 21), Proceedings of the first Picosecond Electronics and
Optoelectronics Conference. 1. Optoelectronics-Congresses. 2. Laser pulses, Ultrashort-Congresses.
1. Mourou, Gerard. II. Bloom, D. M. (David M.), 1948-. III. Lee, Chi H. IV. Picosecond Electronics and
Optoelectronics Conference (1st: 1985 : Lake Tahoe, Nev.) V. Series. TA1673.P53 1985 621.36 85-20804
This work is subject to copyright. All rights are reserved, whether the whole or part of the material is
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gesellschaft Wort", Munich.
© Springer-Verlag Berlin Heidelberg 1985
Softcover reprint ofthe hardcover 1st edition 1985
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2153/3130-543210
Preface
Over the past decade, we have witnessed a number of spectacular advances in
the fabrication of crystalline semiconductor devices due mainly to the pro
gress of the different techni ques of heteroepitaxy. The di scovery of two
dimensional behavior of electrons led to the development of a new breed of
ultrafast electronic and optical devices, such as modulation doped FETs,
permeable base transistors, and double heterojunction transistors. Comparable
progress has been made in the domain of cryoelectronics, ultrashort pulse
generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals
after compression, diode lasers can be modulated at speeds close to 20 GHz
and electrical signals are characterized with subpicosecond accuracy via the
electro-optic effect. Presently, we are experiencing an important interplay
between the field of optics and electronics; the purpose of this meeting was
to foster and enhance the interaction between the two disciplines.
It was logical to start the conference by presenting to the two different
audiences, i.e., electronics and optics, the state-of-the-art in the two res
pective fields and to highlight the importance of optical techniques in the
analysis of physical processes and device performances. One of the leading
techniques in this area is the electro-optic sampling technique. This optical
technique has been used to characterize transmission lines and GaAs devices.
Carrier transport in semiconductors is of fundamental importance and some of
its important aspects are stressed in these proceedings. Because of its role
in communications, a major part of the conference was devoted to laser diodes
and transducers operating in the picosecond range. We also thought it impor
tant to cover the field of cryoelectronics where impressive results in high
speed signal processing and sampling have been obtained. Since heteroepitaxy
and its applications will have a key role in the next generation of laser
diodes, devices and transducers, so the techniques of MBE, MOCVD and their
impact on ~the conception of new devices were presented.
This first Picosecond Electronics and Optoelectronics Conference was held
at Lake Tahoe, Nevada, March 13-15, 1985, and was attended by more than 240
scientists. It was sponsored by the Optical Society of Americal in coopera
tion with the Lasers and Electro-Optics Society and Electron Devices Society
of the Institute of Electrical Engineers.
We would like to gratefully acknowledge the generous grants from AFOSR and
ONR which provided the major source of funding. Finally, we would 1i ke to
specially thank Mary Ellen Malzone from the Optical Society of America for
her dynamic assistance and total dedication in setting up this meeting.
Rochester, July 1985 C.A. Mourou • D.M. Bloom· C.H. Lee
v
Contents
Part I Ultrafast Optics and Electronics
Ultrafast Optical Electronics: From Femtoseconds to Terahertz
By D.H. Auston, K.P. Cheung, J.A. Valdmanis, and P.R. Smith
( Wi th 3 Fi gu re s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Prospects of High-Speed Semiconductor Devices
By N. Chand and H. Morkoc (With 6 Figures) ........................... 9
The Role of Ultrashort Optical Pulses in High-Speed Electronics
By C.V. Shank (With 2 Figures) ....................................... 18
GaAs Integrated Circuit Technology for High Speed Analog and Digital
Electronics. By R. Castagne and G. Nuzillat (With 7 Figures) ........• 23
Heterojunction Bipolar Transistor Technology for High-Speed Integrated
Circuits. By P.M. Asbeck (With 5 Figures) ....................... ..... 32
Permeable Base Transistor. By R.A. Murphy (With 6 Figures) 38
Two Dimensional E-Field Mapping with Subpicosecond Resolution
By K.E. Meyer and G.A. Mourou (With 4 Figures) ........ .... ........... 46
Picosecond Electrooptic Sampling and Harmonic Mixing in GaAs
By B.H. Kolner, K.J. Weingarten, M.J.W. Rodwell, and D.M. Bloom
(With 3 Figures) ....................................................• 50
Characterization of TEGFETs and MESFETs USing the Electrooptic Sampling
Techniques'. By K.E. Meyer, D.R. Dykaar, and G.A. Mourou
(With 4 Figures) ..................................................... 54
Picosecond Electro-Electron Optic Oscilloscope
By S. Williamson and G. Mourou (With 5 Figures) 58
Picosecond Optoelectronic Diagnostics of Field Effect Transistors
By D.E. Cooper and S.C. Moss (With 4 Figures) ........................ 62
Time-Domain Measurements for Silicon Intergrated Circuit Testing Using
Photoconductors. By W.R. Eisenstadt, R.B. Hammond, D.R. Bowman, and
R.W. Dutton (With 3 Figures) ......................................... 66
Modeling of Picosecond Pulse Propagation on Silicon Integrated Circuits
By K.W. Gossen and R.B. Hammond (With 4 Figures) ..................... 70
VII
Part" High-Speed Phenomena in Bulk Semiconductors
Picosecond Processes in Carrier Transport Theory
By D.K. Ferry (With 4 Figures) ....................................... 76
Carrier-Carrier Interaction and Picosecond Phenomena in Polar
Semiconductors. By P. Lugli and D.K. Ferry (With 4 Figures) 83
Subpicosecond Raman Spectroscopy of Electron-LO Phonon Dynamics in GaAs
By J.A. Kash, JoC. Tsang, and JoM. Hvam (With 3 Figures) 0.00......... 87
Acoustic Phonon Generation in the Picosecond Dynamics of Dense
Electron-Hole Plasmas in InGaAsP Films. By J.M. Wiesenfeld
(With 3 Figures) ..................................................••. 91
Picosecond Time-Resolved Photoemission Study of the InP (110) Surface
By J. Bokor, R. Haight, J. Stark, R.H. Storz, R.R. Freeman, and
P.H. Bucksbaum (With 2 Figures) ................................ ....•• 94
Monte Carlo Investigation of Hot Carriers Generated by Subpicosecond
Laser Pulses in Schottky Barrier Diodes. By M.A. Osman, U. Ravaioli,
and D.K. Ferry (With 2 Figures) ................................ ..•... 97
Part "' Quantum Structures and Applications
Properties of GaA1As/GaAs Quantum Well Heterostructures Grown by
Metalorganic Chemical Vapor Deposition. By R.D. Burnham, W. Streifer,
T.L. Paoli, R.L. Thornton, and D.L. Smith ...........................• 102
Molecular Beam Epitaxy Materials for High-Speed Digital Heterostructure
Devices. By D.L. Miller (With 4 Figures) ...........................•• 105
New High-Speed Quantum Well and Variable Gap Superlattice Devices
By F. Capasso (With 18 Fi gures) . . ... ... . . .. .. •. . ... . . .. . . ... . . . . .. ..• 112
Electric Field-Induced Decrease of Exciton Lifetimes in GaAs Quantum
Wells. By J.A. Kash, E.E. Mendez, and H. Morkoc (With 2 Figures) 131
Reduction of Electron-Phonon Scattering Rates by Total Spatial
Quantization. By M.A. Reed, R.T. Bate, W.M. Duncan, W.R. Frensley, and
H.D. Shih (With 3 Figures) ........................................... 135
Hot Electron Diffusion in Superlattices
By J. Ho and R.O. Grondin (With 3 Figures) 139
Time-Resolved Photoluminescence of GaAs/AlxGa1_xAs Quantum Well
Structures Grown by Metal-Organic Chemical Vapor Deposition
By J.E. Fouquet, A.E. Siegman, R.D. Burnham, and T.L. Paoli
(With 5 Figures) .................................................. .•• 143
A Study of Exciton and Carrier Dynamics and a Demonstration of One
Picosecond Optical NOR Gate Operation of a GaAs-A1GaAs Device
By N. Peyghambarian, H.M. Gibbs, J.L. Jewell, A. Migus, A. Antonetti,
D. Hulin, and A. Mysyrowicz (With 2 Figures) ......................... 148
VIII
Exciton-Exciton Interaction in GaAs-GaA1As Superlattices
By D. Hulin, A. Migus, A. Antonetti, A. Mysyrowicz, H.M. Gibbs,
N. Peyghambarian, H. Morkoc, and W.T. Masselink (With 3 Figures) 151
Part I V Picosecond Diode Lasers
An InGaAsP 1.55 Mode-Locked Laser with a Single-Mode Fiber Output
~m
By G. Eisenstein, S.K. Korotky, R.S. Tucker, R.M. Jopson, L.W. Stulz,
J.J. Veselka, and K.L. Hall (With 7 Figures) .......................•• 156
Fast Multiple Quantum Well Absorber for Mode Locking of Semiconductor
Lasers. By Y. Silberberg, P.W. Smith, D.A.B. Miller, B. Tell,
A.C. Gossard, and W. Wiegmann (With 3 Figures) ....................... 159
SUppression of Timing and Energy Fluctuations in a Modelocked
Semiconductor Laser by cw Injection. By F. Mengel, C. Lin, and
N. Gade (With 5 Figures) ............................................• 163
Parametric Oscillations in Semiconductor Lasers
By D. Haas, J. McLean, J. Wurl, T.K. Gustafson, and C.L. Tang .......• 167
Part V Optoelectronics and Photoconductive Switching
Ultrafast Traveling-Wave Light Modulators with Reduced Velocity
Mismatch. By M. Izutsu, H. Haga, and T. Sueta (With 4 Figures) 172
Modulation of an Optical Beam by a Second Optical Beam in Biased
Semi-Insulating GaAs. By L.M. Walpita, W.S.C. Chang, H.H. Wieder,
and T.E. Van Eck (With 6 Figures) ..........•......................••• 176
22-GHz Bandwidth InGaAs/InP PIN Photodiodes
By J.E. Bowers, C.A. Burrus, and R.S. Tucker (With 4 Figures) 180
An Ultrafast Diffusion-Driven Detector
By A.G. Kostenbauder and A.E. Siegman (With 1 Figure) 184
Picosecond Photoconductivity in Polycrystalline CdTe Films Prepared by
UV-Enhanced OMCVD. By A.M. Johnson, D.W. Kisker, W.M. Simpson, and
R.D. Feldman (With 3 Figures) .•...................................••• 188
High-Speed Internal Photoemission Detectors Enhanced by Grating
Coupling to Surface Plasma Waves. By S.R.J. Brueck, V. Diadiuk,
T. Jones, and W. Lenth (With 3 Figures) ...........................•.. 193
Submicron-Gap Photoconductive Switching in Silicon
By G.G. Shahidi, E.P. Ippen, and J. Melngailis (With 4 Figures) 197
Hertzian Dipole Measurements with InP Photoconductors
By P.M. Downey and J.R. Karin (With 3 Figures) ....................... 201
Pulse Waveform Standards for Electro-Optics
By R.A. Lawton ......................................................• 205
IX
High-Speed Optoelectronic Track-and-Hold Circuits in Hybrid Signal
Processors for Wideband Radar. By I. Yao, V. Diadiuk, E.M. Hauser, and
C.A. Bouman (With 4 Figures) ..........•.•.•.............•.....•.....• 207
Optoelectronic Modulation of Millimeter Waves in a Silicon-on-Sapphire
Waveguide. By C.H. Lee, A.M~ Yurek, M.G. Li, E.A. Chauchard, and
R.P. Fischer (With 4 Figures) .•..•....•.............................• 212
Direct DC to RF Conversion by Impulse Excitation of a Resonant Cavity
By M.G. Li, C.H. Lee, A. Caroglanian, E.A. Greene, C.Y. She,
P. Polak-Dingels, and A. Rosen (With 4 Figures) .•...•..........•...•• 216
Kilovolt Sequential Waveform Generation by Picosecond Optoelectronic
Switching in Silicon. By C.S. Chang, M.J. Rhee, C.H. Lee, A. Rosen,
and H. Davis (With 4 Figures) •..•........•••....••..•.........•.....• 220
Femtosecond Nonlinearities of Standard Optical Glasses
By J. Etchepare, I. Thomazeau, G. Grillon, A. Migus, and A. Antonetti
(With 3 Figures) ......•..•..........................................• 224
Part VI Cryoelectronics
High-Speed Analog Signal Processing with Superconductive Circuits
By R.W. Ralston (With 7 Figures) ......... .•..•..... .••.......... ..... 228
Picosecond Sampling with Josephson Junctions
By P. Wolf (With 5 Fi gures) . • .. . . .. . . .. . . . . . .• . . . . . . . . . . .. . . . . .. .•• •• 236
Transmission Line Designs with a Measured Step Response of 3ps per
Centimeter. By C.J. Kryzak, K.E. Meyer, and G.A. Mourou (With 5 Figures) 244
Development of a Picosecond Cryo-Sampler Using Electro-Optic Techniques
By D.R. Dykaar, T.Y. Hsiang, and G.A. Mourou (With 4 Figures) ...•••.• 249
Picosecond Josephson Logic Gates for Digital LSIs
By J. Sone, J.-S. Tsai, and H. Abe (With 5 Figures) 253
Index of Contributors 257
x
Part I
Ultrafast Optics and Electronics
