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Library of Congress Cataloging in Publication Data
International Conference of Neutron Transmutation Doping in Semiconductors, 2d,
University of Missouri.
Neutron transmutation doping in semiconductors.
Includes index.
I. Semiconductor doping-Congresses. 2. Neutron irradiation-Congresses.
3. Silicon-Defects-Congresses. I. Meese, Jon M. II. Title.
aC611.6.D6157 1978 621.3815'2 79-395
ISBN-13: 978-1-4684-8251-5 e-ISBN-13: 978-1-4684-8249-2
001: 10.1007/978-1-4684-8249-2
Proceedings of the Second International Conference on
Transmutation Doping in Semiconductors held at the
University of Missouri, Columbia, Missouri, April 23-26, 1978
This work relates to Department of the Navy Research Grant N00014-78-G.Q012
issued by the Office of Naval Research. The United States Government has a royalty
free license throughout the world in all copyrightable material contained herein. As
long as this Proceedin!J$ is protected by copyright and is reasonably available to the
public for purchase, the Goverrment shall not publish it for sale, or authorize others
to do so.
© 1979 Plenum Press, New York
Softcover reprint of the hardcover 18t edition 1979
A Division of Plenum Publishing Corporation
227 West 17th Street, New York, N.Y. 10011
All rights reserved
No part of this book may be produced, stored in a retrieval system, or transmitted,
in any form or by any means, electronic, mechanical, photocopying, microfilming,
recording, or otherwise, without written permission from the Publisher
Preface
This volume contains the invited and contributed papers
presented at the Second International Conference on Neutron
Transmutation Doping in Semiconductors held April 23-26, 1978 at
the University of Missouri-Columbia. The first "testing of the
waters" symposium on this subject was organized by John Cleland
and Dick Wood of the Solid-State Division of Oak Ridge National
Laboratory in April of 1976, just one year after NTD-silicon
appeared on the marketplace. Since this first meeting, NTD-silicon
has become established as the starting material for the power
device industry and reactor irradiations are now measured in tens
of tons of material per annum making NTD processing the largest
radiation effects technology in the semiconductor industry.
Since the first conference at Oak Ridge, new applications and
irradiation techniques have developed. Interest in a second con
ference and in publishing the proceedings has been extremely high.
The second conference at the University of Missouri was attended
by 114 persons. Approximately 20% of the attendees came from
countries outside the U.S.A. making the conference truly interna
tional in scope.
We at the University of Missouri enjoyed the opportunity to
host the conference and meet with our warm guests. We believe
that our efforts were successful. Perhaps the best indicator of
the success of a conference is the willingness of the participants
to attend and support further conferences on the same subject. At
this meeting in Columbia, the next two conferences were tentatively
arranged. In 1980, the NTD conference will be held in Copenhagen,
hosted by TOPSIL, followed in two years by a fourth conference
hosted by the U. S. National Bureau of Standards.
We would like to thank the following members of the Advisory
Committee for their assistance and advice:
John W. Cleland, Oak Ridge National Laboratory
Gary M. Cook, University of Michigan
Ron R. Hart, Texas A&M University
v
PREFACE
Odgen J. Marsh, Hughes Research Laboratories
Herman J. Stein, Sandia Laboratories
George D. Watkins, Lehigh University
Richard F. Wood, Oak Ridge National Laboratory
We also wish to thank the Organizing and Planning Committee
for handling the many details which must be attended to for such
a meeting to take place:
Ronald R. Berliner, University of Missouri, Vice-Chairman
Steve L. Gunn, University of Missouri, Vice-Chairman
Sarah A. Hulett, University of Missouri, Conference Coordinator
Tom H. Blewitt, Argonne National Laboratory, Program Committee
Bobbie Stone, Monsanto Corporation, Program Committee
Mike D. McCarver, Monsanto Corporation, Program Committee
and Publicity
Rose Mayfield, Monsanto Corporation, Displays and Publicity
We also gratefully acknowledge the financial support we
received for this conference from the following organizations:
Monsanto Corporation
Office of Naval Research
Air Force Office of Scientific Research
Rockwell International
University of Missouri Research Reactor
University of Missouri Extension Division
A special thanks must be given to Ola Montgomery who has been
invaluable throughout the organizing of the conference and who has
patiently prepared the final manuscripts for publishing. We also
wish to acknowledge the steadfast support of Bob Brugger and Don
Alger of the Research Reactor Facility and Ardie Emmons of the
Office of Research of the University of Missouri.
Jon M. Meese
Conference Chairman
Columbia, Missouri
December 1978
Contents
CHAPTER 1: INTRODUCTION
The NTD Process - A New Reactor Technology . 1
J. M. Meese
CHAPTER 2: RADIOACTIVITY AND RADIATION PROTECTION
Detection and Identification of Potential Impurities
Activated by Neutron Irradiation of
Czochralski Silicon . . . . 11
Bobbie D. Stone, Donald B. Hines, Steve L. Gunn
and David McKown
Nuclear Transmutation Doping From the Viewpoint of
Radioactivity Formation ....... . 27
E. W. Haas and J. A. Martin
CHAPTER 3: NTD DEVICE APPLICATIONS AND DEVICE PHYSICS
Application of NTD Silicon for Power Devices 37
Hans r,\ork Janus
The Advantages of NTD Silicon for High Power
Semiconductor Devices 47
Roger W. Phillips
NTD Silicon on High Power Devices 53
C. K. Chu and J. E. Johnson
Role of Neutron Transmutation in the Development of
High Sensitivity Extrinsic Silicon
IR Detector Material . . . . . . . . 65
H. M. Hobgood, T. T. Braggins, J. C. Swartz
and R. N. Thomas
vii
viii CONTENTS
Study of the Special Characteristics of the
Breakdown Process in Silicon PN-Junctions 91
Gerald C. Huth, Boris L. Hikin and
Vladimir Rodov
Resistivity Fluctuations in Highly Compensated
NTD Silicon . ......... . 109
J. M. Meese and Paul J. Glairon
Transistor Gain Trimming in I2L Integrated
Circuits Using the NTD Process 129
E. J. Caine, P. J. Glairon, E. J. Charlson
and E. M. Charlson
CHAPTER 4: REACTOR FACILITIES FOR TRANSMUTATION DOPING
Determination of the Neutron Flux and Energy Spectrum
and Calculation of Primary Recoil and
Damage-Energy Distributions for Materials
Irradiated in the Low Temperature Fast
Neutron Facility in CP-5 . . . . . . . . . . . . . 143
M. A. Kirk and L. R. Greenwood
Neutron Doping of Silicon in the Harwell Research
Reactors ........... . 157
T. G. G. Smith
Silicon Irradiation Facilities at the NBS Reactor . . . . . . 165
N. A. Bickford and R. F. Fleming
General Electric Test Reactor NTD Silicon
Development Program . . . 171
J. E. Morrissey, T. Tillinghast,
A. P. Ferro and B. J. Baliga
An Automated Irradiation Facility for Neutron
Doping of Large Silicon Ingots 181
J. L. Bourdon and G. Restelli
High Precision Irradiation Techniques for NTD
Silicon at the University of Missouri
Research Reactor . . . . . 197
S. L. Gunn, J. M. Meese and D. M. Alger
A Computer Controlled Irradiation System for the
University of Missouri Research Reactor 215
R. Berliner and S. Wood
CONTENTS ix
CHAPTER 5: BASIC PROCESSES--RADIATION DAMAGE AND DOPANT PRODUCTION
Atomic Displacement Effects in Neutron
Transmutation Doping . . . . 229
H. J. Stein
The Minority Carrier Lifetime of Neutron Doped
Silicon ......... . 249
Olof Malmros
Electrical Property Studies of Neutron
Transmutation Doped Silicon 261
J. W. Cleland, P. H. Fleming, R. D. Westbrook
R. F. Wood and R. T. Young
Defect Annealing Studies in Neutron Transmutation
Doped Silicon . . . . . . 281
B. C. Larson, R. T. Young and J. Narayan
Isochronal Annealing of Resistivity in Float Zone
and Czochralski NTD Silicon 291
Paul J. Glairon and J. M. Meese
Electron Spin Resonance in NTD Silicon 307
L. Katz and E. B. Hale
Defect Levels Controlling the Behavior of NTD
Silicon During Annealing . . . . 317
B. Jayant Baliga and Andrew O. Evwaraye
Residual Radioactivity Measurements for High
Purity Silicon Irradiated by
Pile Neutrons . . . . . . . . 329
Atsushi Yusa, Kazuhiro Hasebe,
Yoshibumi Yatsurugi and Hidio Higuchi
Magneto-Optical Study of Shallow Donors in
Transmutation Doped GaAs . . . 333
J. H. M. Stoelinga, D. M. Larsen,
W. Walukiewicz, R. L. Aggarwal and C. o. Bozler
Shallow Defect Levels in Neutron Irradiated
Extrinsic P-Type Silicon 335
M.H. Young, O. J. Marsh and R. Baron
Measurements of Concentrations Produced by Neutron
3 Ip
Transmutation Doping of Silicon . . . . 345
R. R. Hart, L. D. Albert, N. G. Skinner,
M. H. Young, R. Baron and o. J. Marsh
x CONTENTS
CHAPTER 6: SUMMARY OF THE CONFERENCE
"Pursuit of the Ultimate Junction" ... 355
J. M. Meese
Participants 359
Index 367
THE NTD PROCESS--A NEW REACTOR TECHNOLOGY
J. M. Meese
University of Missouri Research Reactor
Columbia, Missouri 65211
We wish to extend a warm welcome to all of you for attending
and supporting this meeting. Without your interest and urging, this
conference would not have taken place. In particular, we would like
to.thank John Cleland and Dick Wood of Oak Ridge National Laboratory
for hosting the first NTD Conference and for suggesting that a second
conference be held at the University of Missouri. Our sincere appre
ciation extends also to the Monsanto Corporation, the conference
catalyst in the early planning stages, both financially and otherwise.
We also thank the Air Force Office of Scientific Research and the
Office of Naval Research for their encouragement and support and
Rockwell International who supported the publishing of the abstracts.
The title I have chosen for this brief introduction, "The NTD
Process--A New Reactor Technology," is perhaps a misnomer. The words
"Reactor Technology" could easily be replaced by "Semiconductor
Technology" or even "Radiation Technology." The title emphasizes,
however, the impact this new technology is making on the reactor
community. In a real sense, reactor faci lit ies have had to make the
greatest adjustments of all those involved in this new segment of the
semiconductor industry.
The NTD process involves the cooperation of semiconductor mate
rials specialists, device producers, radiation damage and defect
specialists and reactor personnel. Of all the possible interactions
among these groups, those with the reactor community have tradition
ally been the weakest. Reactor personnel have, therefore, had the
greatest learning curves to overcome. It is to the credit of both
the reactor community and the semiconductor industry that these
difficulties have been overcome so readily in the few years since
1975 when NTD silicon first appeared on the market. An inspection
