LMV821 Single/LMV822 Dual/LMV824 Low Vol, Low Pwr, R-to-R Out, 5-MHz Op Amp datasheet

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LMV821-N,LMV822-N,LMV822-N-Q1,LMV824-N,LMV824-N-Q1
SNOS032I–AUGUST1999–REVISEDJUNE2016
LMV82x Single/Dual/Quad, Low Voltage, Low Power, RRO, 5 MHz Operational Amplifiers
1 Features 3 Description
• QualifiedforAutomotiveApplications The LMV821/LMV822/LMV824 op amps bring
1 performance and economy to low voltage, low power
• AEC-Q100QualifiedWiththeFollowingResults:
systems. With a 5 MHz unity-gain frequency, at 2.7 V
– LMV822-Q1AndLMV824-Q1AreAvailablein supply, and a 1.4 V/µs slew rate, the quiescent
AutomotiveAEC-Q100Grade1Version current is only 220 µA per amplifier. They provide rail
• ForVs=5V,TypicalSupplyValuesUnless to rail output (RRO) swing into 600 Ω load. The input
common-mode voltage range includes ground and
OtherwiseNoted
the maximum input offset voltage is 3.5 mV. They are
• LMV824AvailableWithExtendedTemperature
also capable of easily driving large capacitive loads
Rangeto125°C asindicatedintheapplicationssection.
• SmallSC70-5Package2.0x1.25x0.95mm
The LMV821 single op amp is available in the tiny
• SpecifiedPerformanceAt2.5V,2.7Vand5V SC70-5 package, which is about half the size of the
• V 3.5mV(Max) previous title holder, the SOT23-5. The
OS
LMV824NDGV is specified over the extended
• TCV 1uV/°C
OS industrial temperature range and is in a TVSOP
• GainBandwidthProductAt2.7V,5MHz
package.
• I At 2.7VSupply,220 μAperAmplifier
Supply Overall, the LMV821/LMV822/LMV824 devices are
• SlewRate1.4V/µs(Min)
low voltage, low power and performance op amps
• CMRR 90dB designed for a wide range of applications at an
• PSRR 85dB economicalprice.
• V At5VSupply,-0.3Vto4.3V
CM DeviceInformation(1)
• RailtoRailOutput(RRO)
DEVICENAME PACKAGE BODYSIZE
– 600 Ω Load,160mVFromRail
SOT23(5) 2.92mmx1.60mm
LMV821-N
– 10kΩ Load,55mVFromRail SC70(5) 2.00mmx1.25mm
• StablePerformancewithCapacitiveLoads SOIC(8) 4.90mmx3.91mm
LMV822-N
VSSOP(8) 3.00mmx3.00mm
2 Applications
LMV822-N-Q1 VSSOP(8) 3.00mmx3.00mm
• CordlessPhones SOIC(14) 8.65mmx3.91mm
LMV824-N
• CellularPhones TSSOP(14) 5.00mmx4.40mm
• Laptops LMV824-N-Q1 TSSOP(14) 5.00mmx4.40mm
• PDAs LMV824I TVSOP(14) 4.40mmx3.60mm
• PCMCIA (1) Forallavailablepackages,seetheorderableaddendumat
theendofthedatasheet.
TelephoneLineTransceiverforPCMCIAModemCard
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
LMV821-N,LMV822-N,LMV822-N-Q1,LMV824-N,LMV824-N-Q1
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Table of Contents
1 Features.................................................................. 1 7.2 FunctionalBlockDiagram.......................................19
2 Applications........................................................... 1 7.3 FeatureDescription.................................................19
3 Description............................................................. 1 7.4 DeviceFunctionalModes........................................19
4 RevisionHistory..................................................... 2 8 ApplicationandImplementation........................ 22
8.1 ApplicationInformation............................................22
5 PinConfigurationandFunctions......................... 4
8.2 TypicalApplications................................................22
6 Specifications......................................................... 5
8.3 Do'sandDon'ts ......................................................28
6.1 AbsoluteMaximumRatings......................................5
9 PowerSupplyRecommendations...................... 28
6.2 ESDRatings..............................................................5
10 Layout................................................................... 29
6.3 RecommendedOperatingConditions.......................5
6.4 ThermalInformation,5Pins......................................5 10.1 LayoutGuidelines.................................................29
6.5 ThermalInformation,8Pins(3)..................................6 10.2 LayoutExample....................................................29
6.6 ThermalInformation,14Pins(3)................................6 11 DeviceandDocumentationSupport................. 31
6.7 DCElectricalCharacteristics2.7V ...........................6 11.1 DocumentationSupport .......................................31
6.8 DCElectricalCharacteristics2.5V............................9 11.2 ReceivingNotificationofDocumentationUpdates31
6.9 ACElectricalCharacteristics2.7V............................9 11.3 CommunityResources..........................................31
6.10 DCElectricalCharacteristics5V.............................9 11.4 RelatedLinks........................................................31
6.11 ACElectricalCharacteristics5V...........................12 11.5 Trademarks...........................................................31
6.12 TypicalCharacteristics..........................................13 11.6 ElectrostaticDischargeCaution............................31
7 DetailedDescription............................................ 19 11.7 Glossary................................................................31
7.1 Overview.................................................................19 12 Mechanical,Packaging,andOrderable
Information........................................................... 32
4 Revision History
NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion.
ChangesfromRevisionH(April2014)toRevisionI Page
• ChangedFeaturesSection..................................................................................................................................................... 1
• MovedStorageTemperaturefromHandlingRatingsTablewhichhasbeenrenamedESDTable...................................... 5
• ChangedHandlingRatingsTabletoESDRatingsTableFormat-nodatachanged............................................................ 5
• AddedThermalInformation ................................................................................................................................................... 5
• ChangedandupdatedElectricalTables ............................................................................................................................... 9
ChangesfromRevisionG(November2013)toRevisionH Page
• ChangeddatasheetflowandlayouttoconformwithnewTIstandards.Addedthefollowingsections:Application
andImplementation,PowerSupplyRecommendations,Layout,DeviceandDocumentationSupport,Mechanical,
Packaging,andOrderableInformation .................................................................................................................................. 1
• AddedAddednewLMV824Ithroughoutdatasheet................................................................................................................ 1
• Deleted"RefertoapplicationnoteAN-397fordetailedexplanation."-nosuchappnote.................................................... 23
• AddedAddedSection .......................................................................................................................................................... 28
• AddedAddedSection .......................................................................................................................................................... 28
ChangesfromRevisionD(February2013)toRevisionG Page
• Addednewpart...................................................................................................................................................................... 1
• Addednewdevice.................................................................................................................................................................. 1
• Addednewdevice.................................................................................................................................................................. 5
• Addednewdevice.................................................................................................................................................................. 6
• Addednewdevice.................................................................................................................................................................. 9
• Addednewdevice.................................................................................................................................................................. 9
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5 Pin Configuration and Functions
5-PinSC70-5/SOT23-5
DCK0005A,DBV0005APackages
TopView
8-PinSOIC/VSSOP
D0008A,DGK0008APackages
TopView
14-PinSOIC/TSSOP/TVSOP
D0014A,PW0014A,DGV0014APackages
TopView
PinFunctions
PINNAME I/O DESCRIPTION
+IN I Non-InvertingInput
-IN I InvertingInput
OUT O Output
V- P NegativeSupply
V+ P PositiveSupply
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6 Specifications
6.1 Absolute Maximum Ratings(1)(2)
MIN MAX UNIT
DifferentialInputVoltage V– V+ V
SupplyVoltage(V+–V−) –0.3 5.5 V
OutputShortCircuittoV+(3) See (3)
OutputShortCircuittoV−(3) See (3)
SolderingInformation
InfraredorConvection(20sec) 235 °C
JunctionTemperature(4) 150 °C
StorageTemperatureT –65 150 °C
stg
(1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.OperatingRatingsindicateconditionsfor
whichthedeviceisintendedtobefunctional,butspecificperformanceisnotensured.Forensuredspecificationsandthetest
conditions,seetheElectricalCharacteristics.
(2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityandspecifications.
(3) Appliestobothsingle-supplyandsplit-supplyoperation.Continuousshortcircuitoperationatelevatedambienttemperaturecanresultin
exceedingthemaximumallowedjunctiontemperatureof150°C.Outputcurrentsinexcessof45mAoverlongtermmayadversely
affectreliability.
(4) ThemaximumpowerdissipationisafunctionofT ,θ ,andT .Themaximumallowablepowerdissipationatanyambient
J(max) JA A
temperatureisP =(T –T )/θ .AllnumbersapplyforpackagessoldereddirectlyintoaPCboard.
D J(max) A JA
6.2 ESD Ratings
VALUE UNIT
Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001,allpins(1)
(2)(3) ±2000
V Electrostaticdischarge Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001,allpins (1) V
(ESD) ±1500
LMV821
MachineModel(MM) (4) ±200
(1) LevellistedaboveisthepassinglevelperANSI,ESDA,andJEDECJS-001.JEDECdocumentJEP155statesthat500-VHBMallows
safemanufacturingwithastandardESDcontrolprocess.
(2) Humanbodymodel,1.5kΩinserieswth100pF.
(3) AECQ100-002indicatesHBMstressingisdoneinaccordancewiththeANSI/ESDA/JEDECJS-001specificationforQgradedevices.
(4) Machinemodel,200Ωinserieswith100pF.
6.3 Recommended Operating Conditions
MIN NOM MAX UNIT
SupplyVoltage 2.5 5.5 V
LMV821,LMV822,LMV824 –40 85
TemperatureRange °C
LMV822-Q1,LMV824IandLMV824-Q1 –40 125
6.4 Thermal Information, 5 Pins(1)
DCK DBV
SC70-5 SOT23-5
THERMALMETRIC(1) PACKAGE PACKAGE UNIT
5PIN 5PIN
R Junction-to-ambientthermalresistance 263.4 217.8 °C/W
θJA
R Junction-to-case(top)thermalresistance 102.8 142.4 °C/W
θJC(top)
R Junction-to-boardthermalresistance 50.9 49.4 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 3.7 29.1 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 50.2 48.5 °C/W
JB
R Junction-to-case(bottom)thermalresistance N/A N/A °C/W
θJC(bot)
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report.
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6.5 Thermal Information, 8 Pins(1)
D DGK
SOIC VSSOP
THERMALMETRIC(1) PACKAGE PACKAGE UNIT
8PIN 8PIN
R Junction-to-ambientthermalresistance 132.6 193.9 °C/W
θJA
R Junction-to-case(top)thermalresistance 76.9 84.4 °C/W
θJC(top)
R Junction-to-boardthermalresistance 73.2 114.5 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 25.0 21.6 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 72.6 113.0 °C/W
JB
R Junction-to-case(bottom)thermalresistance N/A N/A °C/W
θJC(bot)
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report.
6.6 Thermal Information, 14 Pins(1)
D PW DGV
SOICPACKAGE TSSOP TVSOP
THERMALMETRIC(1) PACKAGE PACKAGE UNIT
14PIN 14PIN 14PIN
R Junction-to-ambientthermalresistance 109.7 135.6 148.2 °C/W
θJA
R Junction-to-case(top)thermalresistance 65.9 63.8 67.3 °C/W
θJC(top)
R Junction-to-boardthermalresistance 64.1 77.4 77.5 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 24.5 13.0 12.9 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 63.9 76.8 76.9 °C/W
JB
R Junction-to-case(bottom)thermalresistance N/A N/A N/A °C/W
θJC(bot)
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report.
6.7 DC Electrical Characteristics 2.7V
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=2.7V,V−=0V,V =1.0V,V =1.35VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER TESTCONDITIONS MIN (1) TYP (2) MAX (1) UNIT
LMV821/822/822-Q1/824 1 3.5
LMV821/822/822-Q1/824,OverTemperature 4
V InputOffsetVoltage mV
OS
LMV824-Q1/LMV824I 1
LMV824-Q1/LMV824I,OverTempeature 5.5
InputOffsetVoltage
TCV 1 μV/°C
OS AverageDrift
30 90
I InputBiasCurrent nA
B
OverTemperature 140
0.5 30
I InputOffsetCurrent nA
OS
OverTemperature 50
CommonMode 0V≤VCM≤1.7V 70 85
CMRR dB
RejectionRatio 0V≤V ≤1.7V,OverTemperature 68
CM
1.7V≤V+≤4V,V-=1V,V =0V,V =0V
O CM 75 85
LMV821/822/824/824-Q1/LMV824I
+PSRR PositivePowerSupply 1.7V≤V+≤4V,V-=1V,V =0V,V =0V dB
RejectionRatio O CM 70
LMV821/822/824/824-Q1/LMV824I,OverTemperature
LMV822-Q1 75 85
(1) Alllimitsareensuredbytestingorstatisticalanalysis.
(2) TypicalValuesrepresentthemostlikelyparametricnorm.
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DC Electrical Characteristics 2.7V (continued)
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=2.7V,V−=0V,V =1.0V,V =1.35VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER TESTCONDITIONS MIN (1) TYP (2) MAX (1) UNIT
-1.0V≤V-≤-3.3V,V+=1.7V,V =0V,V =0V
O CM 73 85
LMV821/822/824/824-Q1/LMV824I
NegativePower
−PSRR SupplyRejection -1.0V≤V-≤-3.3V,V+=1.7V,V =0V,V =0V dB
O CM 70
Ratio LMV821/822/824/824-Q1/LMV824I,OverTemperature
LMV822-Q1 73 85
InputCommon-Mode –0.3 –0.2
V ForCMRR≥50dB V
CM VoltageRange 1.9 2.0
Sourcing,R =600Ωto1.35V,
L
V =1.35Vto2.2V; 90 100
O
LMV821/822/824
Sourcing,R =600Ωto1.35V, dB
L
V =1.35Vto2.2V; 85
O
LMV821/822/824,OverTemperature
LMV822-Q1/LMV824-Q1/LMV824I 90 100
Sinking,R =600Ωto1.35V,
L
V =1.35Vto0.5V 85 90
O
LMV821/822/824
Sinking,R =600Ωto1.35V,
L
V =1.35Vto0.5V 80
O dB
LMV821/822/824,OverTemperature
LMV824I 85 90
LargeSignalVoltage LMV824I,OverTemperature 78
A
V Gain LMV822-Q1/LMV824-Q1 85 90
Sourcing,R =2kΩto1.35V,
L
V =1.35Vto2.2V; 95 100
O
LMV821/822/824
Sourcing,R =2kΩto1.35V, dB
L
V =1.35Vto2.2V; 90
O
LMV821/822/824,OverTemperature
LMV822-Q1/LMV824-Q1/LMV824I 95 100
Sinking,R =2kΩto1.35V,
L
V =1.35Vto0.5V 90 95
O
LMV821/822/824
Sinking,R =2kΩto1.35V, dB
L
V =1.35Vto0.5V 85
O
LMV821/822/824,OverTemperature
LMV822-Q1/LMV824-Q1/LMV824I 90 95
V+=2.7V,R =600Ωto1.35V 2.50 2.58
L
0.13 0.20 V
V+=2.7V,R =600Ωto1.35V,OverTemp 2.40 0.30
L
V OutputSwing
O V+=2.7V,R =2kΩto1.35V 2.60 2.66
L
0.08 0.120 V
V+=2.7V,R =2kΩto1.35V,OverTemp 2.50 0.200
L
Sourcing,V =0V 12 16
O
I OutputCurrent mA
O
Sinking,V =2.7V 12 26
O
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DC Electrical Characteristics 2.7V (continued)
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=2.7V,V−=0V,V =1.0V,V =1.35VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER TESTCONDITIONS MIN (1) TYP (2) MAX (1) UNIT
LMV821(Single) 0.22 0.3
mA
LMV821,OverTemperature 0.5
LMV822(Dual) 0.45 0.6
I SupplyCurrent mA
S
LMV822,OverTemperature 0.8
LMV824(Quad) 0.72 1.0
mA
LMV824,OverTemperature 1.2
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6.8 DC Electrical Characteristics 2.5V
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=2.5V,V−=0V,V =1.0V,V =1.25VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER CONDITION MIN (1) TYP (2) MAX (1) UNIT
LMV821/822/822-Q1/824 1 3.5
LMV821/822/822-Q1/824,OverTemperature 4
V InputOffsetVoltage mV
OS
LMV824-Q1/LMV824I 1
LMV824-Q1/LMV824I,OverTemperature 5.5
2.30 2.37
V+=2.5V,R =600Ωto1.25V
L
0.13 0.20 V
V+=2.5V,R =600Ωto1.25V,OverTemperature 2.20 0.30
L
V OutputSwing
O
2.40 2.46
V+=2.5V,R =2kΩto1.25V
L
0.08 0.12 V
V+=2.5V,R =2kΩto1.25V,OverTemperature 2.30 0.20
L
(1) Alllimitsareensuredbytestingorstatisticalanalysis.
(2) TypicalValuesrepresentthemostlikelyparametricnorm.
6.9 AC Electrical Characteristics 2.7V
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=2.7V,V−=0V,V =1.0V,V =1.35VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER TESTCONDITIONS MIN (1) TYP (2) MAX (1) UNIT
SR SlewRate See (3) 1.5 V/μs
Gain-Bandwdth
GBW 5 MHz
Product
Φ PhaseMargin 61 Deg.
m
G GainMargin 10 dB
m
Amp-to-AmpIsolation See (4) 135 dB
Input-RelatedVoltage f=1kHz,V =1V
e CM 28 nV/√Hz
n Noise
Input-Referred f=1kHz
i 0.1 pA/√Hz
n CurrentNoise
TotalHarmonic f=1kHz,A =−2,
THD V 0.01%
Distortion R =10kΩ,V =4.1V
L O PP
(1) Alllimitsareensuredbytestingorstatisticalanalysis.
(2) TypicalValuesrepresentthemostlikelyparametricnorm.
(3) V+=5V.Connectedasvoltagefollowerwith3Vstepinput.Numberspecifiedistheslowerofthepositiveandnegativeslewrates.
(4) Inputreferred,V+=5VandR =100kΩconnectedto2.5V.Eachampexcitedinturnwith1kHztoproduceV =3V .
L O PP
6.10 DC Electrical Characteristics 5V
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=5V,V−=0V,V =2.0V,V =2.5VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER TESTCONDITIONS MIN (1) TYP (2) MAX (1) UNIT
LMV821/822/822-Q1/824 1 3.5
LMV821/822/822-Q1/824,OverTemperature 4.0
V InputOffsetVoltage mV
OS
LMV824-Q1/LMV824I 1
LMV824-Q1/LMV824I,OverTemperature 5.5
InputOffsetVoltage
TCV 1 μV/°C
OS AverageDrift
(1) Alllimitsareensuredbytestingorstatisticalanalysis.
(2) TypicalValuesrepresentthemostlikelyparametricnorm.
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DC Electrical Characteristics 5V (continued)
Unlessotherwisespecified,alllimitsensuredforT =25°C.V+=5V,V−=0V,V =2.0V,V =2.5VandR >1MΩ.
J CM O L
Temperatureextremesare−40°C≤T ≤85°CforLMV821/822/824,and−40°C≤T ≤125°CforLMV822-Q1/LMV824-
J J
Q1/LMV824I.
PARAMETER TESTCONDITIONS MIN (1) TYP (2) MAX (1) UNIT
40 100
I InputBiasCurrent nA
B
OverTemperature 150
0.5 30
I InputOffsetCurrent nA
OS
OverTemperature 50
CommonMode 0V≤VCM≤4.0V 72 90
CMRR dB
RejectionRatio 0V≤V ≤4.0V,OverTemperature 70
CM
1.7V≤V+≤4V,V-=1V,V =0V,V =0V
O CM 85 75
LMV821/822/824/824-Q1/824I
PositivePower
+PSRR SupplyRejection 1.7V≤V+≤4V,V-=1V,V =0V,V =0V dB
O CM 70
Ratio LMV821/822/824/824-Q1/824I,OverTemperature
LMV822-Q1 75 85
-1.0V≤V-≤-3.3V,V+=1.7V,V =0V,V =0V
O CM 73 85
LMV821/822/824/824-Q1/824I
NegativePower
−PSRR SupplyRejection -1.0V≤V-≤-3.3V,V+=1.7V,V =0V,V =0V dB
O CM 70
Ratio LMV821/822/824/824-Q1/824I
LMV822-Q1 73 85
InputCommon-Mode ForCMRR≥50dB -0.3 -0.2 V
V
CM VoltageRange 4.2 4.3 V
Sourcing,R =600Ωto2.5V,
L
V =2.5Vto4.5V; 95 105
O
LMV821/822/824
Sourcing,R =600Ωto2.5V, dB
L
V =2.5Vto4.5V; 90
O
LMV821/822/824,OverTemperature
LMV822-Q1/LMV824-Q1/LMV824I 95 105
Sinking,R =600Ωto2.5V,
L
V =2.5Vto0.5V 95 105
O
LMV821/822/824
Sinking,R =600Ωto2.5V,
L
V =2.5Vto0.5V 90
O dB
LMV821/822/824,OverTemperature
LMV824I 95 105
LargeSignalVoltage LMV824I,OverTemperature 82
A
V Gain LMV822-Q1/LMV824-Q1 95 105
Sourcing,R =2kΩto2.5V,
L
V =2.5Vto4.5V; 95 105
O
LMV821/822/824
Sourcing,R =2kΩto2.5V, dB
L
V =2.5Vto4.5V; 90
O
LMV821/822/824,OverTemperature
LMV822-Q1/LMV824-Q1/LMV824I 95 105
Sinking,R =2kΩto2.5V,
L
V =2.5Vto0.5V 95 105
O
LMV821/822/824
Sinking,R =2kΩto2.5V, dB
L
V =2.5Vto0.5V 90
O
LMV821/822/824,OverTemperature
LMV822-Q1/LMV824-Q1/LMV824I 95 105
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