Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

421 Pages·2020·22.601 MB·English

by  Byung-Eun Park (editor), Hiroshi Ishiwara (editor), Masanori Okuyama (editor), Shigeki Sakai (editor), Sung-Min Yoon (editor)

Topics in Applied Physics 131
Byung-Eun Park · Hiroshi Ishiwara ·
Masanori Okuyama · Shigeki Sakai ·
Sung-Min Yoon   Editors
Ferroelectric-
Gate Field Effect
Transistor
Memories
Device Physics and Applications
Second Edition
Topics in Applied Physics
Volume 131
Series Editors
Young Pak Lee, Physics, Hanyang University, Seoul, Korea (Republic of)
Paolo M. Ossi, NEMAS - WIBIDI Lab, Politecnico di Milano, Milano, Italy
David J. Lockwood, Metrology Research Center, National Research Council
of Canada, Ottawa, ON, Canada
Kaoru Yamanouchi, Department of Chemistry, The University of Tokyo, Tokyo,
Japan
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Byung-Eun Park Hiroshi Ishiwara
(cid:129) (cid:129)
Masanori Okuyama Shigeki Sakai
(cid:129) (cid:129)
Sung-Min Yoon
Editors
Ferroelectric-Gate Field
Effect Transistor Memories
Device Physics and Applications
Second Edition
123
Editors
Byung-EunPark Hiroshi Ishiwara
Schoolof Electrical andComputer Frontier Collaborative Research Center
Engineering Tokyo Institute of Technology
University of Seoul Yokohama,Japan
Seoul, Korea (Republicof)
Shigeki Sakai
Masanori Okuyama National Institute ofAdvanced Industrial
Graduate Schoolof Engineering Science Science andTechnology(AIST)
Osaka University Tsukuba,Japan
Osaka,Japan
Sung-MinYoon
AdvancedMaterials Engineering
for Information andElectronics
KyungheeUniversity
Yongin,Korea (Republicof)
ISSN 0303-4216 ISSN 1437-0859 (electronic)
Topicsin AppliedPhysics
ISBN978-981-15-1211-7 ISBN978-981-15-1212-4 (eBook)
https://doi.org/10.1007/978-981-15-1212-4
1stedition:©SpringerScience+BusinessMediaDordrecht2016
2ndedition:©SpringerNatureSingaporePteLtd.2020
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Preface
The applications offerroelectric materials have been manifold and overspreading,
coveringallareasofourworkplacesandhomesoverthepresentcentury.Byfarthe
largest number of applications in ferroelectric materials remained to be associated
with bulk ceramics, but a trend toward thin films for specified applications, which
provides additional benefits including lower operating voltage, higher speed
operations, and scaling ability, has been energetically developed. Among various
applications offerroelectric thin films, the development of nonvolatile ferroelectric
random access memory(FeRAM)hasbeen mostactively progressed since thelate
1980s and reached modest mass production for specific application since 1995.
These activities have been mainly motivated by the physical limitation and tech-
nological drawbacks of the flash memory. One is the capacitor-type (1T1C-type)
FeRAM, in which a ferroelectric material is used as in the storage capacitor of a
dynamic random access memory (DRAM) structure. The other is the field effect
transistor(FET)-type(1T-type)FeRAM,inwhichtheconventionalgateinsulatoris
replaced with a ferroelectric thin film. Although the FET-type FeRAM claims the
ultimate scalability and nondestructive readout characteristics, the capacitor-type
FeRAMs have been the main interest for the major semiconductor memory com-
panies,becausetheferroelectricFETshavefatalhandicapsofcross-talkforrandom
accessibility and short retention time. The present main applications of the com-
mercialized FeRAMs are low-density nonvolatile embedded memory. Eventually,
the huge expectations for the FeRAMs turned out to be somewhat different from
what they had in prospect, to the contrary, the flash memories keep the over-
whelminglydominant position inthenonvolatile memory-relatedindustriesthanks
to their fascinating technology improvements and tremendously increasing needs
for them.
Unlike these Si-based electronics demanding an ultrahigh performance and an
aggressivedevicescaling,therequirementsforthenonvolatilememorycomponents
embedded into the large-area electronics implemented on glass, plastic, or paper
substrates are considerably different. If we can additionally obtain such features as
mechanicalflexibility,transparencytothevisiblelight,lowerpoweroperation,and
higherdevicereliabilitywithasimplerprocessatlowertemperature,itwouldhave
v
vi Preface
a great impact on therelatedindustries. The ferroelectric gate fieldeffect transistor
(FeFET)isaverypromisingcandidatebecauseitcanbereproduciblyoperatedwith
a definitely designable principle and be prepared by a very simple process.
There are already lots of books dealing with thecapacitor-type FeRAMs. Thus,
this book aims to provide the readers with development history, technical issues,
fabrication methodologies, and promising applications of FET-type ferroelectric
memorydevices,whichhavenotbeencomprehensivelydiscussedinthepublished
books. The book is composed of chapters written by remarkable leading
researchers.Authorsareorganizedwithtopexperts,whohavebeenengagedwithin
ferroelectricmaterialsandrelateddevicetechnologies,includingoxideandorganic
ferroelectric thin films for a long time.
In Part I, this book presents a comprehensive review of past and present tech-
nologies for the FET-type ferroelectric memories through historical development
background. The feature, principle, theoretical analysis, and improvement of
FET-type ferroelectric memories are also overviewed. Part II contains practical
characteristics of FET-type ferroelectric memory devices. The long retention and
switchingcharacteristicsofferroelectricmemorydevicesusinghafniumoxide-based
filmsarenewlyaddedinthesecondedition.Withtheimportantaspectsofchannel
layers, the practical properties of silicon-based and thin film-based channel layer
ferroelectricgatefieldeffecttransistorsarediscussedinPartsIIandIII.InPartsIV
and V, the properties of organic ferroelectric materials such as poly(vinylidene
fluoride) (PVDF), polyvinylidene fluoride trifluoroethylene [P(VDF-TrFE)], and
polyvinylidene fluoride tetrafluoroethylene [P(VDF-TeFE)] in ferroelectric gate
fieldeffecttransistorsarestudied.Thecharacteristicsofferroelectricgatetransistors
usingblendedPVDF/P(VDF-TrFE)thinfilmsareaddedinPartIV.PartsIVandV
alsocontaindiscussionsonbothsilicon-basedandthinfilm-basedchannellayerof
ferroelectricgatefieldeffecttransistors.Utilizingadvantageoftheorganicmaterials,
flexibleferroelectricgatefieldeffecttransistorsusingplasticandpapersubstratesare
fabricatedanddiscussedinPartVI.Thecharacteristicsoforganicferroelectricfield
effecttransistors fabricated onAlfoilandPolyimidesubstratesarenewlyaddedin
Part VI ofthe second edition.
Finally, future prospects for novel applications such as NAND flash memory
circuits,relaxor,adaptive-learningsynapticdevices,andhigh-kgateoxidethin-film
transistors are discussed in Part VII. Polymorphism of hafnia-based ferroelectrics
and ferroelectric gate field effect transistors for neuromorphic systems are newly
added in the second edition.
The technology field of FET-type ferroelectric memory has great impacts on
both fundamental device physics and commercial industrial opportunities.
Notwithstanding, there have hardly been appropriate technical books dealing with
an insightful review to all the key technologies and applications of the FET-type
ferroelectric memory devices. This book provides a comprehensive coverage of
materialcharacteristics,processtechnologies,anddeviceoperationsforthememory
fieldeffecttransistorsemployinginorganicororganicferroelectricthinfilms,which
havenotbeendiscussed inpreviouslypublishedbooks. Theseissues wouldbebig
helps for further advances in large-area electronics implemented on glass, plastic,
Preface vii
orpapersubstrateaswellasinconventionalsilicon(Si)electronics.Thus,thisbook
is a useful source of information for graduate students of material science and
electronic engineering, device, and process engineers in industries.
We would like to express our sincere thanks to many other colleagues (in
alphabetical order), in particular to Prof. Norifumi Fujimura, Prof. Cheol Seong
Hwang,Prof.TakeshiKanashima,Prof.ThomasMikolajick,Prof.Cheol-MinPark,
Prof. Min Hyuk Park, Prof. Tatsuya Shimoda, Prof. Eisuke Tokumitsu, and
Prof. Takeshi Yoshimura for their invaluable contributions. We are also very
thankful to Dr. Yoshihisa Fujisaki, Dr. Dae-Hee Han, Dr. Yukihiro Kaneko,
Dr. Richard H. Kim, Dr. Uwe Schroeder, Dr. Stefan Slesazeck, and Dr. Mitsue
Takahashi for the continuous supports. Last but not the least, we would like to
thanktoMr.SmithChaeandMrs.BarbaraAmoresefortheirtremendouseffortsin
arranging the manuscripts for this book.
Seoul, Korea (Republic of) Byung-Eun Park
Tokyo, Japan Hiroshi Ishiwara
Osaka, Japan Masanori Okuyama
Tsukuba, Japan Shigeki Sakai
Suwon, Korea (Republic of) Sung-Min Yoon
Contents
Part I Introduction
1 Features, Principles, and Developments of Ferroelectric-Gate
Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Masanori Okuyama
Part II Practical Characteristics of Inorganic Ferroelectric-Gate
FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
2 Development of High-Endurance and Long-Retention FeFETs
of Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate Stacks. . . . . . . . 23
Mitsue Takahashi and Shigeki Sakai
3 Downsizing of High-Endurance and Long-Retention
Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si FeFETs . . . . . . . . . . . . . 61
Mitsue Takahashi and Shigeki Sakai
4 Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped
HfO Films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
2
Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic
and Thomas Mikolajick
5 Switching in Nanoscale Hafnium Oxide-Based Ferroelectric
Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick
and Stefan Slesazeck
Part III Practical Characteristics of Inorganic Ferroelectric-Gate
FETs: Thin Film-Based Ferroelectric-Gate Field Effect
Transistors
6 Oxide-Channel Ferroelectric-Gate Thin-Film Transistors
with Nonvolatile Memory Function. . . . . . . . . . . . . . . . . . . . . . . . . 111
Eisuke Tokumitsu
ix
x Contents
7 ZnO/Pb(Zr,Ti)O Gate Structure Ferroelectric FETs . . . . . . . . . . . 125
3
Yukihiro Kaneko
8 Novel Ferroelectric Gate Field-Effect Transistors (FeFETs);
Controlled Polarization-Type FeFETs. . . . . . . . . . . . . . . . . . . . . . . 147
Norifumi Fujimura and Takeshi Yoshimura
Part IV Practical Characteristics of Organic Ferroelectric-Gate
FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
9 Nonvolatile Ferroelectric Memory Transistors Using PVDF,
P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin Films . . . . . 177
Dae-Hee Han and Byung-Eun Park
10 Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/
Semiconductor Structure Ferroelectric-Gate FETs . . . . . . . . . . . . . 195
Yoshihisa Fujisaki
Part V Practical Characteristics of Organic Ferroelectric-Gate
FETs: Thin Film-Based Ferroelectric-Gate Field Effect
Transistors
11 P(VDF-TeFE)/Organic Semiconductor Structure
Ferroelectric-Gate FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Takeshi Kanashima and Masanori Okuyama
12 Nonvolatile Ferroelectric Memory Thin-Film Transistors
Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate
Insulator and an Oxide Semiconductor Active Channel . . . . . . . . . 241
Sung-Min Yoon
Part VI Practical Characteristics of Organic Ferroelectric-Gate
FETs: Ferroelectric-Gate Field Effect Transistors
with Flexible Substrates
13 Mechanically Flexible Nonvolatile Field Effect Transistor
Memories with Ferroelectric Polymers . . . . . . . . . . . . . . . . . . . . . . 265
Richard H. Kim and Cheolmin Park
14 Paper Transistors with Organic Ferroelectric P(VDF-TrFE)
Thin Films Using a Solution Processing Method. . . . . . . . . . . . . . . 291
Dae-Hee Han and Byung-Eun Park
15 Non-volatile Organic Ferroelectric Field-Effect Transistors
Fabricated on Al Foil and Polyimide Substrates. . . . . . . . . . . . . . . 307
Dae-Hee Han, Min Gee Kim and Byung-Eun Park