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DESIGN OF A HIGH EFFICIENCY S-BAND POWER AMPLIFIER FOR A CUBESAT by MOISE ... PDF

107 Pages·2017·2.79 MB·English
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by Unknow| 2017| 107 pages| 2.79| English

About DESIGN OF A HIGH EFFICIENCY S-BAND POWER AMPLIFIER FOR A CUBESAT by MOISE ...

BJT: Bipolar Junction Transistor. C/I: Carrier-to-Intermodulation. CMCD: Current-Mode Class-D. CPUT: Cape Peninsula University of Technology. DC: Direct Current .. Hayat et al., (2013:389), state .. RF power devices such as bipolar junction transistors (BJTs), metal oxide semiconductor field effect

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Author:Unknown
Publication Year:2017
Pages:107
Language:English
File Size:2.79
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