Analog Integrated Circuit Design

714 Pages·1997·22.05 MB·English

by  D.A. Johns

ANALOG INTEGRATED
CIRCUIT DESIGN

DAVID A. JOHNS
KEN MARTIN
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Contents

CHAPTER 1 WNTEGRATED-CIRCUIT DEVICES AND MODELUNG- 1

1. Seinigemsiersand pn Jutions 1
12 MOS Teristors 4

15 arkanced MOS Medeling —°4
VA Bipolar Jonorian Kransivies 4?
LS Device Movil Summary 36

Th SPICE Modoling Paeancrens 6)

Li Appendix 65
Va References 7%
as 18
CHAPTER2 PROCESSING AND LAYOUT : a

LL CMOS Procesing 82
Bipuss Procesins 95

53° CMOS Tayou sid Nesign Rules
FA Analog Lay Considerations 108
25 Laghtle 18
Be Rekeenet 12
25 puivene 12
CHAPTERS BASIC CURRENT MIRRORS AND SINGLE-STAGE AMPLIFIERS 125

Li SiopleCMOS Cocua Minar 125
32 Common Swwrss Arapliier 125

3 Seuns-Follewer ue Commun Dssin Amplifier 129
S4 Comments Arplibear 132

35. Sunes Repenerated Craven Mineo 135

3.6 FighCutpuImpedance Coen! Miners 137

23 Caicole Gain Stoge 14D

33 MOS Ditiseena Pir and Gann St
39. BipulieCumoneMieure $46
B.D ipolae Gata Stages
RAL ragaincy Responee 1S
32 SPICE Simelicioe Csemmles 169
BIT Tefen 16
14 Probiems 17h

ACHAFTIER.A NOISE ANALYSIS AND MODELUNG

‘Tine-Devtin Analesis 18
Bia sencyvnnin Agen T86

Noise Models toe Circuit Flees 196
Noise Auclysis Cocaples 204
References 215

Probes 211

CHAPTER 5 BASIC OPAME DESIGN AND COMPENSATION

BA ‘Teusage (MOS Opmup 222
5.2 Peedback and Opamp Compenst
53. SPICL Somulaon Ls

52 Relroney 25
55 Problems 2

CHAPTER 6 ADVANCED CURRENT MIRRORS AND OPAMPS
8.1 Adeamed Curent Mion — 258
2 Fable CascaleOpamp 266
6.3 CumeneMirror Opanip 275,
Lins Selling ‘Lime Revisited 208

Gamein-Feedback Oparaps 291
SPICE Shulicioe Examples 298
Retsoncce 249
Problems 50

Y CHAFTER7 COMPARATORS
Using an Opp tora Comperaor 208
Charge lajgrion Fens 28

Latched Compuratars 317

Caaciples of CMOS aod ICMAOS Comptes
Examples cf Bipour Compscator, 38
Refer 80

Problens 31

181

221

256

04
i Connie

CHAPTERS

CHAPTER?

CHAPTER 10

CHAPTER 11

SAMPLE AND HOLDS, VOLTAGE REFERENCES,

AND TRANSUINEAR GRCUITS, 34
8.1 Fecixmance of Supe sn-Hold Cinuits 334

82 MOS Sample awl-Hola Hanes 336

83 Examples CMOS SANCirouies 3d

R4 Bipolarand KACMOS Sample aus Holds 348

83 Bandgap Westage Reference Basics 352

48 Cini for Bandgap Re a7

S17 Tranehmear Gin Cell

KA Teanstineur Mier

89 Relenwr, —348

KO moms 310

DISCRETE-TIME SIGNALS wa

3.1 Oveniew of Some Sota Sprtia
82 apace Uransoem oF Discrete-Time Sipnats 7
92 ztunsfonm 277

‘44 Soensampling ans Tpsamping 379

95. Dierete-tine Fiters 382

88 Sumpleid-Hokl Respowse 8B

97 References 381

VA Probleme 31 :

SWITCHED-CAPACITOR CIRCUTS 304

$0.1 Basie Talding Blocks 394
102, asic Opersson and Anutysis 398

13 PiesOrder Fite 408

104 RiquadFiters 45

TLS Chacge Injection 25,

LOS Soitehed-CapeivarGainCinails 427
107 Comat Ponbe-Sampling Techniques 433
108 Oiler Svitened-Cipuitor Cons 434
109 Roferensss 417

HLID Problems 492

DATA CONVERTER FUNDAMENTALS a5
TLL Ade BIA Converter 5

112 Ideal AD Canceset 447

113 Quinlicwion Nowe 448

TLS Signed Cndes 482
Gonmate

115) Perlarmwace Liaaiaions 454
1156 Refennces abl
U7 Problems 461

CHAPTER 12 NYQUIST:RATE D/A CONVERTERS. 463

12.1 DocederBaied Converters 463
122 Ionuey Sealed Cowvesten 468
123 Thomometer-Cade Converers ATS
124 Hybrid Comeners 8

12S Reternonn

LS robes ae

(CHAPTER 13. NYQUIST-RATE A/D CONVERTERS 47

TAL Integrating Converters 487
132 Snecencive Appinsimation Converts, 492
1X3 Algor vr Cyolc) AMD Cunserter 504
[84 FlihiGorPrlled) Convoners 57

13S Twosp AD Comeness 518

136 Inlecpolaing AD Convenes 516

17 Belding AM Convener 519

TNE Plpeliied AD Consentes 523,
TA9.Tim-lvleaved AD Conventrs "526

IE) Refers 527
WRAL Problems 528
CHAPTER 14 OVERSAMPLING CONVERTERS. 531

14.4 Oveesanpling without Noise Shaping 541
182 Overropling wily Noise Shepiog 538
143 System Aehitceres S47

V2 Digital Decimation Fiters $51

443 IligberOnler Moduluors 555

12h Bandpast Oversampling Converters 557
127 Practical Cormeratone $59

12H Miu-Ric Ovorsampling Canverter
129 Thi Onder AD Design Example
W410 Refersnses STL

1411 Probiews 372

CHAPTER 15. CONTINUQUS-TIME FILTERS 7a

15.1 Aneoduction 9 Ga Plers 575,
152 RipalirTeamceondacts SR
x Cone

M08 Transconductors Using Trisde Trmssons 39
EMOS Trunteonductore Using Active Traisurs FE
BECMOS teutsconunctnes Al
MOSIEECEIINe 620

IS? Thoin Cicuioy 626

IS Dynan was
139 Referens 643
1510 Prosiems

oj CHAPTER 16 PHASE-LOCKED LOOPS. a8

161 Basic Loop Acchitesiee 68
12 PLLs with Ghurge-Panp Mase Comparuiors 65
161 VologeContelld Osis 670,

id Compu: Simulation af Ps is
16.5 Appontis 689

166 Referees 2

67 Problems 69)

INDEX 696
CHAPTER
1 Integrated-Circuit
Devices and Modelling

Ii tas chap, the apertion and mvadting ef semivonducte deca ade oe
Alteugh i posible to do simple impresses wih a bose knowledge
fof rericundetor dcvice minding, for Nihenoed tde-oPshieur deni, an i
sept undzrstaniag af he occadt-onder elects of device operon amd their model-
Ling consider crit

eis aseurned tht mast seadets have bec :uulwcel i ast aad hie asia
nude in poesine cess. Ths. fundamen semisonduccer concepts ure only
Twiewy reviews. Seetim 1.1 deserves pn juactions 107 digdes). Thi section
Amposan! in vrvleraanding the parse capasianees in many device models, sch a+
jmeinn capacitances. Sectim [2 cavers MOS Tunssture a woaklRng, Te shld be
rowed thet this sec celles ho sone degree tho matvialpresinusly resented in
Seatiyn -1, in which devin eapacitanes ws covered. Sectun 1.4 coves bipolar
junction tamistos and medelling, A sotamaty ef device model and impacan: wp
Tins presen in Ssetnn 1.3. This sumisry i ycticoanly wel ev zeader cho
already has 4 goo background in isiniapr tating, in which sae Uke sure
cae sed eo fallow che notannn used trouetous Ibe reminder uf Ihe book.
fd, amet deserptom i ven ofthe most important procss-related parame
tse it SPICT: rualing, Final, this chapter coachudes witha Appenatx enti
Sng derivations ofthe rune pysicly ba elec cris.

1.1 SEMICONDUCTORS AND pn JUNCTIONS:

A semigonduetor i erst lice siwrtue tk can hae fre elecrone (hich are
regia carer) atu fe Des (ichare an ahsones of cles end are equ
Teot ro poritivecanieres The ‘ype of semizonducterIepvilly voll siliaon foam
sooy celled sor, This ae We vlenae af Fo, plying that each wom hos
torr eleceonstoshare wah neighboring noms when frie the sovalnthonds
ihe oxytal lative tre eon ch, andoped eicom s a ec pure erst steele
Taving ages number of te slecioneundbles, Thesefivecarers aretha loc one
dorhufesthat have gana ough ere de tuna station escape thirds
‘Aton temperate thee are agprogitay 15 7 10! samers ofeach yp per
‘ocoquivalelly 1.3 10 cannesin® the manber of car es apprenimately Coubes
Fr avey 11% inerents Ww tersperatre,
2 Chopar 1+ Images Creal Deveer ove otal og

Foe ope silicun wih a pentavaleatumpurty ia, syns ofan elemenc having
sa valence of five. © equislenly five lectins mn the oner shel, seatlale when
hovdng ith neighboring stems, tre wll be dans oe ature eketton for
every impurity stn, These fee eletans 2a eid Ww oad caren. A pease
Tent inp i suid donate fee elton to che ie ry and ths the ime
rity kn a6 cbmc Examples wf donee lenis ae phoepins,P, an anseic,
AAS, These impurties ate alo cael "ype dapat sinc tne Hee cain, suing
fh tiv use have negative cherge. Whe a Type impute ote held me
era aegacve caries wr elecnons a altar the hi ve the doping concent,
and is meh preter dem Gk sumer of eee elecian® in nie scum, In caer.
wort,

= Np au
where

dons te fscslectron apscentation in M-iypemiseria wd Np 1s the
oping concentration twill te sutseript D denaing, ds Ou tbe other Wad, che
nn Cee bles an ropa tii be src Tee tha the saber ot holes
in movie cur and ean be shown "Sze, TOSI 3 be given by

cs
Jets n ithe saser serena in rine icon,
Sinilady. {Cone pes icon wit soma busing a valence of thie fur example

boron (i, the nncration Uf penive camisoles wil be approximately oa
tw the eergpeor concentration, Ne.

be Ne as
odie nator sin caries nt Ap n,n. is Ney
eel 1
E ¢

EXAMPLE 1

Iutrnse ifeun a6 doped wih bono concentration of 16" stout. At
root empeatre, svat are the soncentatene of ules elton inh
resuling ped scan? Assume thal ny = 1.510" savior

eycatating, ty, ll appre qual dp eoncemtaion (0,
0° Golesi. Te cle someon isan from tr be
11 Semicanducors end pr Juctions 3

= 2310" elects! 1s

Such doped silicon isrefened to as peype since it has many more fee holes
than fee elections

Diodes

To realize « diode, or. equivalently. pn junction, one part of a semiconductor i
dap tyne. and closely adjacent partis dopod B type, ts shown in Fig. Tse
the die, or junction, is formed betwea the p° region and then zegin. It sould be
‘ted thatthe superscripts indicate the velative doping levels. For example, the Br
bulk region might have an imparity concentration of $10" caries, wher the
andr regions woul! be dpe ne heavily tow valve argu’ 10° 10" eam
fri! Also, note tht the metal conics to the diode (inthis ase, aluminum) ate
oancted 19 heavily dapod region a apposed to lightly dope region therwise
Schortty diode would occur. ‘Schotky diodes are discussed on page 15.) Ths, in
fonder not to make a Sehotthy diode, the conection Wo ten region i aetally made
via the n rpion. ;

In the pt side, lage mimber of foe postive cariers are avaiebi whersas in
the n side, many fe native carriers are avllale. The oles in the p side will end
to ier or itfse in the side, whereas the Toe electrons in then side will end
to diffuse tothe side. This process is very similar oto gases randomly ising,
together. Thscifasion Ivers the concentration of re carers inthe rezion between
{he two sides. As the two types of eariers dase together, they recombine. Every
tlectrun tht diffuses from the side to te p sde leaves behind a bound postive
carps close t0 the wansiton region, Simi, every lle tat diffses fom the
‘de leaves hebind a bound electron nar the transition region. The en result i shown
in Fig. 12. This diffusion of fie caer estes a depletion region atthe junction of
ie bro sides where no tee carries exist and which has a net negative charge onthe

side and a ast postive charge om eM sie, The total suman of exposed ve bout
‘rode cathode
Si, ° 9 A
cathode
pnyvreion ° Bulk

Fig. 1 Across acon ofp diode