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Drytech Quad Etch Recipes ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Drytech Quad Etch Recipes Dr. Lynn Fuller Mike Aquilino MMiiccrrooeelleeccttrroonniicc EEnnggiinneeeerriinngg Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041 Dr. Fuller’s webpage: http://people.rit.edu/lffeee Email: [email protected] MicroE webpage: http://www.microe.rit.edu Rochester Institute of Technology 10-14-2013 Quad_Recipes.ppt Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 1 Drytech Quad Etch Recipes OUTLINE 1500Å/3500Å Nitride Etch Recipe 6000Å Poly Etch Recipe LTO/TEOS/Oxide Etch for Contact Cuts Anisotropic Poly (2µm) Etch Recipe for MEMS Anisotropic Poly (3000Å) Gate Etch Recipe for Advanced CMOS DDeeeepp SSiilliiccoonn EEttcchh ffoorr MMEEMMSS Anisotropic Oxide Etch for Sidewall Spacer Anisotropic Nitride Etch for Sidewall Spacer ZeroEtch for ASML alignment marks End point detection Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 2 Drytech Quad Etch Recipes DRYTEK QUAD RIE TOOL Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 3 Drytech Quad Etch Recipes 2 OF 4 CHAMBERS IN THE DRYTEK QUAD RIE TOOL Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 4 Drytech Quad Etch Recipes PLASMA ETCHING IN THE DRYTEK QUAD Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 5 Drytech Quad Etch Recipes DRYTEK QUAD RIE TOOL The Drytek Quad is a four chamber reactive ion etch (RIE) tool with recipe storage/selection and automatic sequencing for loading the wafers, pumping the chamber, running of the recipe and unloading the wafers. The emission spectra or specific peaks of the emission spectra can be manually monitored during the etch and the etch can be manually stopped, by pushing a button, providing a form of eennddppooiinntt ddeetteeccttiioonn.. This is an RIE tool meaning that the electrode that the wafer sits on is the powered electrode providing the possibility of an anisotropic etch. Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 6 Drytech Quad Etch Recipes POLYMER FORMATION H2 additions O2 additions CF4 plasma yy cc Increasing anisotropic gg 300 eV ee ii rr rr pp ee uu oo nn ss rr EE ss tt ee oo IInnccrreeaassiinngg SSiiOO22::SSii rr ss tt nn PP ii nn Selectivity ee gg aa mm nn gg dd ii ss nn rr aa ii aa ee ss bb aa rr mm cc ee nn rr Polymer Isotropic oo cc II BB nn II Formation Etch nn oo II Increasing Isotropic Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 7 Drytech Quad Etch Recipes ETCH RATE Relative Etch Rate Etch Rate nm/min Pressure 25 mTorr 1.0 100 Flow Rate 40 sccm Poly 0.8 80 Resist 00..66 6600 SiO2 0.4 40 Poly 0.2 20 10 20 30 40 50% 10 20 30 40 50% Percent O2 Percent H2 in CF4 + H2 Rochester Institute of Technology Mixtures Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 8 Drytech Quad Etch Recipes ISOTROPIC 6000Å POLY ETCH RECIPE 6000Å Isotropic Poly Etch SF6 84 sccm, O2 15 sccm, RF Power300 w, Pressure 400 mTorr, 4950 A/min (Isotropic), Resist Etch Rate ?, Oxide Etch Rate ? Recipe Name: FACPOLY Step 1 Chamber 2 Power 300W PPrreessssuurree 330000 mmTToorrrr Gas SF6 Flow 100 sccm Gas O2 Flow 10 sccm Metal Plate Yes Poly Etch Rate 6000 Å/min Photoresist Etch Rate: ??? Å/min Oxide Etch Rate: ??? Å/min Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 9 Drytech Quad Etch Recipes ANISOTROPIC POLY GATE ETCH RECIPE Anisotropic Poly Gate Etch Recipe SF6 30 sccm, CHF3 30 sccm, O2 5 sccm, RF Power 160 w, Pressure 40 mTorr, 1900 A/min (Anisotropic), Resist Etch Rate 300 A/min, Oxide Etch Rate 200 A/min Recipe Name: FACPOLY Step 2 Chamber 2 Power 160 watts PPrreessssuurree 4400 mmTToorrrr Gas SF6 Flow 30 sccm Gas CHF3 Flow 30 sccm Gas O2 Flow 5 sccm Poly Etch Rate 1150 Å/min Photoresist Etch Rate: 300 Å/min Oxide Etch Rate: 200 Å/min Rochester Institute of Technology Microelectronic Engineering © October 14, 2013 Dr. Lynn Fuller Page 10

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Anisotropic Nitride Etch for Sidewall Spacer. ZeroEtch for ASML . Theory: The CHF3 and CF4 provide the F radicals that do the etching of the silicon dioxide
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Anisotropic Nitride Etch for Sidewall Spacer. ZeroEtch for ASML . Theory: The CHF3 and CF4 provide the F radicals that do the etching of the silicon dioxide

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