Top 347 yong gan auth PDF Book Page 6
Handbook of GaN Semiconductor Materials and Devices
Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen
·709 Pages
·2018
·57.084 MB
Gallium nitride (GaN) : physics, devices, and technology
Verne, Jules; Bishop, Harry
·388 Pages
·1985
·19.069 MB
Power GaN Devices: Materials, Applications and Reliability
Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni (eds.)
·383 Pages
·2017
·25.193 MB
Computers and Games: 4th International Conference, CG 2004, Ramat-Gan, Israel, July 5-7, 2004. Revised Papers
Brian Sheppard (auth.), H. Jaap van den Herik, Yngvi Björnsson, Nathan S. Netanyahu (eds.)
·343 Pages
·2006
·3.854 MB
DTIC ADA276115: GaAs/GaN Strained Layer Superlattice Materials for High Temperature Transistors. Phase 1
Defense Technical Information Center
·10 Pages
·0.52 MB
DTIC ADA431005: Investigation of Structural and Electrical Defects in GaN/AlGaN Structures and MODFETs
Defense Technical Information Center
·1.5 MB
罗隆基 : 我的被捕的经过与反感 /Luo Longji : Wo de bei bu de jing guo yu fan gan
罗隆基/Luo, Longji; 谢泳/Xie, Yong
·327 Pages
·1999
·12.277 MB
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke
·0.46 MB
DTIC ADA457814: Photoluminescence Studies of Rare Earth (Er, Eu, Tm) in situ Doped GaN
Defense Technical Information Center
·7 Pages
·0.19 MB
DTIC ADA519013: Characterization of Bulk GaN Crystals Grown From Solution at Near Atmospheric Pressure
Defense Technical Information Center
·2.2 MB
Magneto-photoluminescence of GaN/AlGaN quantum wells: valence band reordering and excitonic binding energies
P. A. Shields
·9 Pages
·0.22 MB
Polarisation dynamique de drain et de grille d'un amplificateur RF GaN appliquée à un
Arnaud Delias
·217 Pages
·2017
·21.4 MB
On the Nestorian Tablet of Se-Gan Foo
Alexander Wylie
·64 Pages
·2019
·5.265 MB
Design of a 20W GaN MMIC Doherty Power Amplifier for the Frequency Range 4400MHz
Børge Myran
·105 Pages
·2016
·5.05 MB
Micro-structure Engineering of InGaN/GaN Quantum Wells for High Brightness Light Emitting Devices
Chao Shen
·97 Pages
·2013
·7.25 MB
DTIC ADA512270: Dependence of Ohmic Contact Resistance on Barrier Thickness of AlN/GaN HEMT Structures
Defense Technical Information Center
·0.4 MB
Gan Zengfu Zhe Huangdi (Penakluk hati sang Kaisar)
Twoprince_Oneking
·2.9353 MB
Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital ...
Dragan Mitrevski
·175 Pages
·2011
·18.58 MB
甘南纪事 Gan Nan Ji Shi
杨显惠
·2011
·0.211 MB
DTIC ADP015084: Design of GaN/A1GaN HEMT Class-E Power Amplifier Considering Trapping and Thermal Effects
Defense Technical Information Center
·10 Pages
·0.39 MB
Algorithmic Geometry [auth. unkn.]
272 Pages
·1997
·22.076 MB
